MOLECULAR DYNAMICS SIMULATION OF THE INITIAL STAGE OF ANNEALING OF SILICON DIOXIDE IRRADIATED WITH Si+ IONS

Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI:10.29003/m3094.mmmsec-2022/140-143

E. Okulich, V. Okulich, D. Tetelbaum, A. Mikhaylov

引用次数: 0

Abstract

In this work, molecular dynamics modeling of the processes of self-annealing of filament structures in memristors based on a-SiO2 films irradiated with Si+ ions has been performed.

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硅离子辐照二氧化硅退火初始阶段的分子动力学模拟

在这项工作中，基于硅离子辐照的a-SiO2薄膜的记忆电阻器中丝结构的自退火过程进行了分子动力学建模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mathematical modeling in materials science of electronic component

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