Eurasian Journal of Science Engineering and Technology最新文献_第2页

THE INFLUENCE OF POST-ANNEALING CdS THIN FILMS GROWN ON ZnO SEED LAYER FOR CdTe SOLAR CELLS 退火后生长在ZnO种子层上的CdS薄膜对CdTe太阳能电池的影响

Eurasian Journal of Science Engineering and Technology Pub Date : 2022-11-28 DOI: 10.55696/ejset.1194810

A. Çiriş

引用次数: 0

A CASE STUDY ON COST ANALYSIS AND LOAD ESTIMATION OF HYBRID RENEWABLE ENERGY SYSTEM USING HOMER PRO 基于Homer pro的混合可再生能源系统成本分析与负荷估算实例研究

Eurasian Journal of Science Engineering and Technology Pub Date : 2022-11-25 DOI: 10.55696/ejset.1110275

Saba Munir, Ausnain Naveed, Raja Tahir Iqbal, Mohtasim Usman

引用次数: 0

INVESTIGATION OF THE EFFECT OF BENDING PROCESS ON FATIGUE LIFE AND MECHANICAL STRENGTH OF HEAVY COMMERCIAL VEHICLE DRAG LINKS 弯曲工艺对重型商用车拖链疲劳寿命和机械强度影响的研究

Eurasian Journal of Science Engineering and Technology Pub Date : 2022-11-25 DOI: 10.55696/ejset.1195927

İbrahim Kılınç, S. Toros

引用次数: 0

A comparative Study on The Photoresist Patterning of Glass and Silicon with Microholes via Maskless Photolithography 无掩模光刻技术在玻璃和硅微孔光刻胶上的对比研究

Eurasian Journal of Science Engineering and Technology Pub Date : 2022-09-28 DOI: 10.55696/ejset.1150239

Furkan Güçlüer, F. Keleş

{"title":"A comparative Study on The Photoresist Patterning of Glass and Silicon with Microholes via Maskless Photolithography","authors":"Furkan Güçlüer, F. Keleş","doi":"10.55696/ejset.1150239","DOIUrl":"https://doi.org/10.55696/ejset.1150239","url":null,"abstract":"Maskless photolithography, a useful tool used in patterning the photoresist which acts as a mask prior to the actual etching process of substrate, has attracted attention mainly due to the taking advantage of reducing cost because of not requiring a preprepared mask and freedom in creating the desired pattern on any kind of substrate. In this study, we performed the positive photoresist patterning with microstructures on both glass and silicon substrates via maskless photolithography. Specifically, we examined the discrepancies between the transparent (glass) and reflective (silicon) substrates even though the photolithographic process has been carried out under the same conditions. Since the positive photoresist patterning was the subject of this study, we could successfully produce the microholes with almost circular shapes and properly placed in squarely packed on both substrates as confirmed by optical microscopy and profilometer mapping measurements. We observed additional rings around the holes when silicon was used as substrate while very clear microholes were obtained for glass. Besides, the number of the rings increased when the writing speed of laser (velocity) reduced. We claim that these important findings can be attributed to the standing wave effect phenomenon which results from the multiple reflections through the semi-transparent photoresist coated on the reflective surface of the polished silicon. In brief, we reveal an important conclusion, in this study, based on the differences in formation of the microholes only due to the substate preference while all the photolithographic process parameters are kept the same.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"67 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113969984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DEFINING GTN PARAMETERS OF DP STEELS OF DIFFERENT ROLLING DIRECTIONS AND AT DIFFERENT STRAIN RATES 确定了不同轧制方向和应变速率下dp钢的GTN参数

Eurasian Journal of Science Engineering and Technology Pub Date : 2022-07-18 DOI: 10.55696/ejset.1113577

Labinot Topilla

引用次数: 0

MONTE-CARLO (MC) ANALYSIS OF BORATED MATERIALS FOR NEUTRON SHIELDING APPLICATIONS 中子屏蔽用硼化材料的蒙特卡罗分析

Eurasian Journal of Science Engineering and Technology Pub Date : 2022-07-18 DOI: 10.55696/ejset.1102371

A. Albarodi, P. Uslu Kiçeci, S. Uzun Duran, B. Demirköz

引用次数: 0

EFFECT OF CALCINATION TEMPERATURE AND CA:EG RATIO ON TL AND OSL CURVE COMPONENTS OF NEIGHBORITE 煅烧温度和ca: eg比对邻体tl和osl曲线组分的影响

Eurasian Journal of Science Engineering and Technology Pub Date : 2022-06-07 DOI: 10.55696/ejset.1101711

V. Güçkan

{"title":"EFFECT OF CALCINATION TEMPERATURE AND CA:EG RATIO ON TL AND OSL CURVE COMPONENTS OF NEIGHBORITE","authors":"V. Güçkan","doi":"10.55696/ejset.1101711","DOIUrl":"https://doi.org/10.55696/ejset.1101711","url":null,"abstract":"This study reveals the differences created by varying calcination temperature and citric acid/ethylene glycol ratio (CA:EG) in thermoluminescence (TL) and optically stimulated luminescence (OSL) curves so that the Neighborite (NaMgF3) compound synthesized using sol-gel can be used as a radiation dosimeter. While producing NaMgF3 phosphors, four different calcination temperatures (700, 800, 900 and 1000 °C) were applied for the calcination process. Characterization analyzes of the samples were performed using X-ray diffraction (XRD) and Scanning electron microscopy (SEM). It was observed that the oxide phases in the crystal structure of the sample increased gradually with increasing calcination temperature. At 1000 °C, it was observed that the crystal structure of the sample was deformed and moved away from the aimed structure. Considering the signal intensities in the TL and OSL glow curves obtained after radiation exposure and the data in the characterization analyzes, the calcination temperature of 800 °C was determined as the optimum temperature. This calcination temperature was kept constant and the samples were reproduced by changing the CA:EG ratio in four different ways (2:4, 4:4, 8:4 and 16:4). By comparing all the sample, the samples with the best crystallization and the most suitable surface morphology were determined. In TL glow curves, it was observed that deep traps could be formed only in samples calcined at 800 °C. Likewise, it was observed from the OSL glow curves that the samples calcined at 800 °C had higher sensitivity. It has been stated that the low sensitivity of the samples calcined at high temperatures is due to the density of the oxide phases formed in the calcination process.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133832870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IMPACT OF SELENIZATION TEMPERATURE AND PRE-ANNEALING TREATMENT ON THE MICROSTRUCTURAL PROPERTIES OF Cu2ZnSnSe4 THIN FILMS GROWN BY RAPID THERMAL PROCESS 硒化温度和预退火处理对快速热生长Cu2ZnSnSe4薄膜显微组织性能的影响

Eurasian Journal of Science Engineering and Technology Pub Date : 2022-05-09 DOI: 10.55696/ejset.1100103

Y. Atasoy, M. A. Olgar

{"title":"IMPACT OF SELENIZATION TEMPERATURE AND PRE-ANNEALING TREATMENT ON THE MICROSTRUCTURAL PROPERTIES OF Cu2ZnSnSe4 THIN FILMS GROWN BY RAPID THERMAL PROCESS","authors":"Y. Atasoy, M. A. Olgar","doi":"10.55696/ejset.1100103","DOIUrl":"https://doi.org/10.55696/ejset.1100103","url":null,"abstract":"The impact of selenization temperature and pre-annealing treatment on the microstructural characteristics of CZTSe thin films were studied. CZTSe thin films were obtained by two-stage process. This processes includes deposition of metallic layers and Se cap layer employing physical vapor deposition systems followed by selenization process performed at elevated temperatures using RTP system with a heating rate of 8°C/s. The compositional properties of CZTSe thin films changed after the heat treatment, but performing pre-annealing treatment before high reaction temperature (550°C) partially prevented element loss in CZTSe compound. Both Raman and XRD measurements confirmed the formation of the kesterite CZTSe phase. However, according to Raman results, CZTSe phase started to decompose into secondary phases such as CTS regardless of temperature. According to the top view images of the samples, the grain structure completely changed with employing heat treatment. Zn-rich phase detected in reacted sample at 550 °C, which indicates decomposition of CZTSe that is confirmed in Raman spectra.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115346762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Forward & Inverse Kinematics Solution of 6-DOF Robots Those Have Offset & Spherical Wrists 具有偏置腕关节和球面腕关节的六自由度机器人运动学正反解

Eurasian Journal of Science Engineering and Technology Pub Date : 2022-05-05 DOI: 10.55696/ejset.1082648

S. Di̇kmenli̇

引用次数: 1

PREPARATION OF CZTS THIN FILM EMPLOYING RAPID THERMAL PROCESSING METHOD 快速热加工法制备CZTS薄膜

Eurasian Journal of Science Engineering and Technology Pub Date : 2022-04-18 DOI: 10.55696/ejset.1098850

M. A. Olgar, Y. Atasoy

{"title":"PREPARATION OF CZTS THIN FILM EMPLOYING RAPID THERMAL PROCESSING METHOD","authors":"M. A. Olgar, Y. Atasoy","doi":"10.55696/ejset.1098850","DOIUrl":"https://doi.org/10.55696/ejset.1098850","url":null,"abstract":"CZTS thin film was fabricated by sulfurization process of deposited thin films on Mo coated glass substrates. Cu, Zn, and Sn thin film layers were deposited sequentially to form Glass/Mo/CuSn/Zn/Cu. The CuSn layer in the stacked structure was formed by annealing process in the sputtering chamber after sequential deposition of Cu and Sn, respectively. The sulfurization process was performed by rapid thermal processing method (RTP) so as to obtain kesterite CZTS structure. The obtained CZTS thin film was analyzed using several characterization methods such as EDX, XRD, Raman spectroscopy, SEM and PL measurements. The EDX measurements showed that elemental loss was not observed after the annealing process in sulfur atmosphere. The fabricated CZTS thin film showed Cu stoichiometric and Zn rich composition. The XRD pattern of annealed sample revealed formation of kesterite CZTS structure. The Raman spectra of the sample proved formation of kesterite CZTS structure. In addition, some CTS phases were detected in the structure by Raman spectroscopy. Polycrystalline surface microstructure was seen in SEM surface measurement. The room temperature PL measurement exhibited a transition around at 1.39 eV that is very close to band gap of kesterite CZTS structure. Overall, with this study, it has been shown that the CZTS thin film structure can be easily produced using the RTP method with very high heating rate.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131037420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0