硒化温度和预退火处理对快速热生长Cu2ZnSnSe4薄膜显微组织性能的影响

Y. Atasoy, M. A. Olgar
{"title":"硒化温度和预退火处理对快速热生长Cu2ZnSnSe4薄膜显微组织性能的影响","authors":"Y. Atasoy, M. A. Olgar","doi":"10.55696/ejset.1100103","DOIUrl":null,"url":null,"abstract":"The impact of selenization temperature and pre-annealing treatment on the microstructural characteristics of CZTSe thin films were studied. CZTSe thin films were obtained by two-stage process. This processes includes deposition of metallic layers and Se cap layer employing physical vapor deposition systems followed by selenization process performed at elevated temperatures using RTP system with a heating rate of 8°C/s. The compositional properties of CZTSe thin films changed after the heat treatment, but performing pre-annealing treatment before high reaction temperature (550°C) partially prevented element loss in CZTSe compound. Both Raman and XRD measurements confirmed the formation of the kesterite CZTSe phase. However, according to Raman results, CZTSe phase started to decompose into secondary phases such as CTS regardless of temperature. According to the top view images of the samples, the grain structure completely changed with employing heat treatment. Zn-rich phase detected in reacted sample at 550 °C, which indicates decomposition of CZTSe that is confirmed in Raman spectra.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"IMPACT OF SELENIZATION TEMPERATURE AND PRE-ANNEALING TREATMENT ON THE MICROSTRUCTURAL PROPERTIES OF Cu2ZnSnSe4 THIN FILMS GROWN BY RAPID THERMAL PROCESS\",\"authors\":\"Y. Atasoy, M. A. Olgar\",\"doi\":\"10.55696/ejset.1100103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The impact of selenization temperature and pre-annealing treatment on the microstructural characteristics of CZTSe thin films were studied. CZTSe thin films were obtained by two-stage process. This processes includes deposition of metallic layers and Se cap layer employing physical vapor deposition systems followed by selenization process performed at elevated temperatures using RTP system with a heating rate of 8°C/s. The compositional properties of CZTSe thin films changed after the heat treatment, but performing pre-annealing treatment before high reaction temperature (550°C) partially prevented element loss in CZTSe compound. Both Raman and XRD measurements confirmed the formation of the kesterite CZTSe phase. However, according to Raman results, CZTSe phase started to decompose into secondary phases such as CTS regardless of temperature. According to the top view images of the samples, the grain structure completely changed with employing heat treatment. Zn-rich phase detected in reacted sample at 550 °C, which indicates decomposition of CZTSe that is confirmed in Raman spectra.\",\"PeriodicalId\":143980,\"journal\":{\"name\":\"Eurasian Journal of Science Engineering and Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Eurasian Journal of Science Engineering and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.55696/ejset.1100103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Eurasian Journal of Science Engineering and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.55696/ejset.1100103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

研究了硒化温度和预退火处理对CZTSe薄膜微观组织特性的影响。采用两段法制备了CZTSe薄膜。该工艺包括采用物理气相沉积系统沉积金属层和硒帽层,然后使用加热速率为8°C/s的RTP系统在高温下进行硒化过程。热处理后CZTSe薄膜的成分性能发生了变化,但在高反应温度(550℃)前进行预退火处理,部分阻止了CZTSe化合物中的元素损失。拉曼和XRD测量均证实了kesterite CZTSe相的形成。然而,根据拉曼结果,无论温度如何,CZTSe相都开始分解为CTS等二次相。从样品的俯视图图看,热处理后晶粒结构完全改变。在550°C时,反应样品中检测到富锌相,这表明在拉曼光谱中证实了CZTSe的分解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
IMPACT OF SELENIZATION TEMPERATURE AND PRE-ANNEALING TREATMENT ON THE MICROSTRUCTURAL PROPERTIES OF Cu2ZnSnSe4 THIN FILMS GROWN BY RAPID THERMAL PROCESS
The impact of selenization temperature and pre-annealing treatment on the microstructural characteristics of CZTSe thin films were studied. CZTSe thin films were obtained by two-stage process. This processes includes deposition of metallic layers and Se cap layer employing physical vapor deposition systems followed by selenization process performed at elevated temperatures using RTP system with a heating rate of 8°C/s. The compositional properties of CZTSe thin films changed after the heat treatment, but performing pre-annealing treatment before high reaction temperature (550°C) partially prevented element loss in CZTSe compound. Both Raman and XRD measurements confirmed the formation of the kesterite CZTSe phase. However, according to Raman results, CZTSe phase started to decompose into secondary phases such as CTS regardless of temperature. According to the top view images of the samples, the grain structure completely changed with employing heat treatment. Zn-rich phase detected in reacted sample at 550 °C, which indicates decomposition of CZTSe that is confirmed in Raman spectra.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信