无掩模光刻技术在玻璃和硅微孔光刻胶上的对比研究

Furkan Güçlüer, F. Keleş
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引用次数: 0

摘要

无掩模光刻技术是一种有用的工具,用于在基材的实际蚀刻过程之前将光刻胶用作掩模,主要是因为它不需要预先准备的掩模,并且可以在任何类型的基材上自由地创建所需的图案,从而降低了成本,因此引起了人们的注意。在这项研究中,我们通过无掩模光刻技术在玻璃和硅衬底上进行了具有微结构的正光刻胶图图化。具体来说,我们检查了透明(玻璃)和反射(硅)衬底之间的差异,即使光刻工艺在相同的条件下进行。由于本研究的主题是正光刻胶图案,我们可以成功地生产出几乎圆形的微孔,并通过光学显微镜和轮廓仪测绘测量证实,这些微孔被正确地放置在两个基板上。我们观察到当硅作为衬底时,孔周围有额外的环,而玻璃则获得了非常清晰的微孔。此外,随着激光写入速度(速度)的降低,环的数量增加。我们认为,这些重要的发现可以归因于在抛光硅的反射表面涂有半透明光刻胶的多次反射所产生的驻波效应现象。总之,我们在本研究中揭示了一个重要的结论,即在所有光刻工艺参数相同的情况下,仅由于基态偏好而导致微孔的形成差异。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A comparative Study on The Photoresist Patterning of Glass and Silicon with Microholes via Maskless Photolithography
Maskless photolithography, a useful tool used in patterning the photoresist which acts as a mask prior to the actual etching process of substrate, has attracted attention mainly due to the taking advantage of reducing cost because of not requiring a preprepared mask and freedom in creating the desired pattern on any kind of substrate. In this study, we performed the positive photoresist patterning with microstructures on both glass and silicon substrates via maskless photolithography. Specifically, we examined the discrepancies between the transparent (glass) and reflective (silicon) substrates even though the photolithographic process has been carried out under the same conditions. Since the positive photoresist patterning was the subject of this study, we could successfully produce the microholes with almost circular shapes and properly placed in squarely packed on both substrates as confirmed by optical microscopy and profilometer mapping measurements. We observed additional rings around the holes when silicon was used as substrate while very clear microholes were obtained for glass. Besides, the number of the rings increased when the writing speed of laser (velocity) reduced. We claim that these important findings can be attributed to the standing wave effect phenomenon which results from the multiple reflections through the semi-transparent photoresist coated on the reflective surface of the polished silicon. In brief, we reveal an important conclusion, in this study, based on the differences in formation of the microholes only due to the substate preference while all the photolithographic process parameters are kept the same.
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