Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472)最新文献_第2页

Modeling 6 MV gas switches for the ZR accelerator ZR加速器的6 MV气体开关建模

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI: 10.1109/PPC.2003.1277683

S. Rosenthal, J. Elizondo, J. Maenchen, K. Struve, D. Mcdaniel, J. Corley, D.L. Johnson, B. Oliver

引用次数: 12

Industrial applications of pulsed wire discharge 脉冲线放电的工业应用

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI: 10.1109/PPC.2003.1277744

W. Jiang, T. Suzuki, H. Suematsu, K. Yatsui

引用次数: 1

K-shell and recombination radiation of aluminum and neon z-pinches at long time implosion regime 长时间内爆状态下铝和氖z缩紧的k壳和复合辐射

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI: 10.1109/PPC.2003.1278088

A. Shishlov, R. Baksht, S. Chaikovsky, A. Fedunin, A. Labetsky, V. Oreshkin, A. Rousskikh, S. Shlykhtun, V. Kokshenev, N. Kurmaev, F. Fursov

引用次数: 0

Perveance and sheath plasma expansion characteristics in high power cylindrical diode 大功率圆柱形二极管的性能和鞘层等离子体膨胀特性

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI: 10.1109/PPC.2003.1277980

K. Y. Sung, W. Jeon, S. H. Chun, E. Choi, H. Uhm

引用次数: 1

The electron beam and pinch effect characteristics of double discharge pulsed electron beam generator 双放电脉冲电子束发生器的电子束和夹紧效应特性

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI: 10.1109/PPC.2003.1277772

H. Goktas, A. Alacakir, G. Oke, A. Esendemir, İ. Yildiz, H. Kirkici, M. Udrea, J. Loureiro

{"title":"The electron beam and pinch effect characteristics of double discharge pulsed electron beam generator","authors":"H. Goktas, A. Alacakir, G. Oke, A. Esendemir, İ. Yildiz, H. Kirkici, M. Udrea, J. Loureiro","doi":"10.1109/PPC.2003.1277772","DOIUrl":"https://doi.org/10.1109/PPC.2003.1277772","url":null,"abstract":"The double discharge pulsed electron beam generator (DDPEBG) is a device that generates an intense filamentary electron beam by superposing two discharges namely a low pressure DC glow discharge and a high current pulsed discharge. The characteristics of this electron beam are: small beam diameter (8 /spl mu/m), high peak current (20 A), and short pulse length (30 ns). The filling gas is helium, argon or nitrogen at approximately 0.1 Torr pressure, and the discharge chamber does not require a high vacuum system. The absence of a high vacuum system and the capability to generate ultra short, intense electron beams are the major advantages of this device and, might be useful in many applications. In this work, further results on operating characteristics of the DDPEBG, such as pinch effects and electron density measurements are given. The beam diameter is measured experimentally by utilizing the interaction of a single pulse with different metal foils targets. These foils are then examined by a scanning electron microscope (SEM) and the measured diameters are compared with the beam diameter values resulted from the pinch effect calculations of the filamentary discharge. The electron density is determined from the beam diameter and current intensity.","PeriodicalId":143385,"journal":{"name":"Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127046713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Application of the coaxial cable lengths for capacitor protection in the large capacitors banks 同轴电缆长度在大型电容器组电容器保护中的应用

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI: 10.1109/PPC.2003.1278026

B. Fridman, A. Drozdov, V. Prokopenko, V. Vesnin

引用次数: 1

Hybrid superconducting-magnetic fault current limiter 复合式超导-磁故障限流器

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI: 10.1109/PPC.2003.1277990

L. Altgilbers, S. Balevičius, N. Žurauskienė, V. Stankevič, P. Cimmperman, F. Anisimovas

引用次数: 1

Status of the diode research programme at AWE AWE二极管研究项目现状

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI: 10.1109/PPC.2003.1277653

J. O. Malley, J. Maenchen, G. Cooperstein

{"title":"Status of the diode research programme at AWE","authors":"J. O. Malley, J. Maenchen, G. Cooperstein","doi":"10.1109/PPC.2003.1277653","DOIUrl":"https://doi.org/10.1109/PPC.2003.1277653","url":null,"abstract":"A summary of the status of diode research at the UK Atomic Weapons Establishment (AWE) is presented. AWE has a requirement to develop intense (1000R at 1m), fast duration (50ns) Bremsstrahlung X-ray sources from small areas (<2mm diameter uniformly filled disc equivalent) at high peak energies (>10 MeV). These sources are required to provide high quality transmission radiographic images through thick (hundreds of grams/cm/sup 2/ of lead equivalent density /spl times/ thickness), high atomic number, explosively driven metal systems in a proposed new hydrodynamics research facility. In order to deliver such sources in a cost-effective manner an extensive research programme is being conducted at AWE to increase the current density at which high-energy electron beams can be focussed in electron beam diodes in such flash radiographic sources. The work on improvements to pulsed power facilities and diagnostics at AWE is described in terms of the development of high quality research facilities for high and low impedance diode development. In addition, an overview of the status and direction of research programmes at AWE to look at four diode technologies is presented. Those diode technologies are immersed Bz diode development, paraxial diode development and both self-magnetic and rod-pinch diode development.","PeriodicalId":143385,"journal":{"name":"Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114117821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Development of high power ultrasound for acoustic source applications 用于声源的高功率超声的发展

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI: 10.1109/PPC.2003.1278061

J. Mackersie, S. Macgregor, I. Timoshkin, L. Yang

{"title":"Development of high power ultrasound for acoustic source applications","authors":"J. Mackersie, S. Macgregor, I. Timoshkin, L. Yang","doi":"10.1109/PPC.2003.1278061","DOIUrl":"https://doi.org/10.1109/PPC.2003.1278061","url":null,"abstract":"The detection and identification of undersea objects is achieved using acoustic pulses which travel long distances through water. The quality of the information obtained from a pulse improves with increasing signal strength and bandwidth. However the combination of high power and bandwidth is difficult to achieve from conventional, electromechanical acoustic sources. The desired characteristics can be achieved by the generation of high power ultrasound (HPU) using pulsed power technology. High-voltage pulses used to form a plasma channel during the breakdown of water produce acoustic shock waves of high power and frequency content. Work at the University of Strathclyde is currently underway to improve the understanding of the mechanism of HPU generation using pulsed power and thus allow the optimisation of the conversion of electrical energy into acoustic energy. The results of initial experiments to systematically generate and characterise high power acoustic pulses are presented. Analysis of the detected pulses, including wavelet time-frequency analysis is discussed.","PeriodicalId":143385,"journal":{"name":"Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121559213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Semiconductor opening switches based on 4H-SIC p/sup +/p/sub o/n/sup +/-diodes 基于4H-SIC p/sup +/p/sub / o/n/sup +/-二极管的半导体开路开关

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI: 10.1109/PPC.2003.1278089

I. Grekhov, P. Ivanov, D. Khristyuk, S. Korotkov

{"title":"Semiconductor opening switches based on 4H-SIC p/sup +/p/sub o/n/sup +/-diodes","authors":"I. Grekhov, P. Ivanov, D. Khristyuk, S. Korotkov","doi":"10.1109/PPC.2003.1278089","DOIUrl":"https://doi.org/10.1109/PPC.2003.1278089","url":null,"abstract":"4H-SiC p/sup +/p/sub o/n/sup +/- and p/sup +/p/sub o/n/sup +/-type diodes have been fabricated and evaluated as opening switch devices which are known in Si to employ the effect of fast reverse current break after switching the diodes from forward to reverse bias conditions. The recovery properties of p/sup +/p/sub o/n/sup +/-diodes were found to be drastically differ from those of p/sup +/p/sub o/n/sup +/-type ones. In p/sup +/p/sub o/n/sup +/-diodes, recombination processes predetermine soft recovery behavior in a time of approximately 16 ns. In p/sup +/p/sub o/n/sup +/-type diodes, purely drift mechanism was found to be responsible, under proper conditions, for the very fast reverse current break in a time less than 1 ns. P/sup +/p/sub o/n/sup +/-diodes were utilized in a pulse generator, which was fabricated with an inductive energy storing unit. The rise time of 400-V pulses generated, about 3 ns, was found to be equal to the quarter of the oscillation period of the LC-tank consisting of 2-/spl mu/? storing inductance and 2-pF 4H-SiC diode capacitance. The possibility to construct 100-kV, 1-ns 4H-SiC pulse generators is considered.","PeriodicalId":143385,"journal":{"name":"Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126269591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0