International Journal of Modern Physics B最新文献

{"title":"Microstructure and mechanical property of Zr-4 alloys brazed with Ag–Cu–Ti filler metal","authors":"Yujie Bai, Yao Wang, Yi Liu, Yuanxing Li","doi":"10.1142/s021797922540034x","DOIUrl":"https://doi.org/10.1142/s021797922540034x","url":null,"abstract":"Zr-4 alloys were vacuum brazed using Ag–Cu–Ti filler metal. The effect of brazing temperature on the microstructure evolution, shear strength and corresponding fracture behavior of the brazed joints was investigated. The typical phases at the brazing temperature of 800, 840 and 930∘C were inferred to be three different microstructures, i.e., a mixture of (Cu, Ti) phases and Ag-rich phase, Ag-rich phase and brittle intermetallic compound (IMC) AgZr, and a uniformly mixed morphology of CuZr and AgZr. And the width of the whole brazed seam increased from 78.4[Formula: see text][Formula: see text]m to 118.8[Formula: see text][Formula: see text]m. Meanwhile, the shear strength of the brazed joints first increased and then decreased followed by a small increase. The maximum shear strength of 138[Formula: see text]MPa was obtained at the treatment of 800∘C for 10[Formula: see text]min. The fracture morphology exhibited typical brittle fracture characteristics, and the cracks initiated from the interface of the brazed joints, and propagated into the intermediate zones.","PeriodicalId":14108,"journal":{"name":"International Journal of Modern Physics B","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141340593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ab-initio investigation of electronic and optical properties of vanadium pentoxide (V2O5)","authors":"Khushbu Dhaked, Rimpy Shukla, Krishna S. Sharma, Ramphal Sharma","doi":"10.1142/s0217979225400326","DOIUrl":"https://doi.org/10.1142/s0217979225400326","url":null,"abstract":"DFT is used for making first-principles calculations of electronic and optical properties of V2O5 in its orthorhombic phase, by employing Augmented Plane Waves[Formula: see text][Formula: see text][Formula: see text]local orbital method with Generalized Gradient Approximation and Perdew–Burke–Ernzerhof potential to account for exchange–correlation interactions. The stability of the material is checked through the calculation of cohesive energy and Bader charge analysis is done to find out the electronic charges on different atoms in the unit cell. A DOS gap of about 2.1[Formula: see text]eV and a direct band gap of about 1.85[Formula: see text]eV just above the Fermi level is found to occur on using DFT, which is lower than the experimental value of 2.77[Formula: see text]eV. On using the DFT[Formula: see text][Formula: see text][Formula: see text]U method, with [Formula: see text][Formula: see text]eV for Vanadium, a DOS gap of about 2.8[Formula: see text]eV and an indirect band gap of about 3.0[Formula: see text]eV are found to occur, which are closer to the experimental result, showing that the DFT+U method better accounts for electronic properties of V2O5. The optical properties, such as dielectric function, reflectivity, absorption coefficient, optical conductivity, refractive index, extinction coefficient and electron energy loss function also investigated for V2O5 by using DFT.","PeriodicalId":14108,"journal":{"name":"International Journal of Modern Physics B","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141341913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling of nanofluid thermophysical treatment through a permeable container under the impact of MHD","authors":"Y. Rothan","doi":"10.1142/s0217979225500742","DOIUrl":"https://doi.org/10.1142/s0217979225500742","url":null,"abstract":"In this innovative study, a unique approach was engaged to simulate the flow characteristics of nanofluid inside a tank featuring a surface subjected to uniform flux. The testing fluid for this investigation was fabricated by incorporating alumina powders with varying shapes into water. The derivation of the final equations involved the application of Darcy’s law and the formulation of the stream function. The container experienced the combined efficacy of both the Lorentz force and gravity forces. The incorporation of additives resulted in a significant enhancement of the Nusselt number (Nu), demonstrating an increase of 19.8% and 40.28%, contingent on the magnitude of the Hartmann number (Ha). Moreover, an elevation in the shape factor led to a notable rise in Nu by 14%. Remarkably, as the Ha increased, there was a substantial reduction in the cooling rate by 51.33%. Furthermore, in the absence of the Ha, an escalation in the Rayleigh number (Ra) caused Nu to surge by 65.8%. This study holds paramount importance as it introduces a novel technique for simulating nanofluid flow with a sinusoidal surface, providing valuable insights into the complex interplay of forces within the container. The utilization of varying shapes of alumina powders adds a layer of sophistication to the experimentation, making this investigation a noteworthy contribution to the existing body of knowledge. The findings not only enhance our understanding of heat transfer dynamics but also offer practical implications for applications involving nanofluids in containers with nonuniform surfaces subjected to heat flux.","PeriodicalId":14108,"journal":{"name":"International Journal of Modern Physics B","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141351333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analyzing cutting force and vibration amplitude in high-speed milling of SKD11 steel with thermal assistance","authors":"The-Thanh Luyen, Thi-Bich Mac, Duc-Toan Nguyen","doi":"10.1142/s0217979225400181","DOIUrl":"https://doi.org/10.1142/s0217979225400181","url":null,"abstract":"In the realm of machining, the optimization of cutting conditions stands as a paramount pursuit for enhancing both efficiency and precision. This study embarks on a pioneering investigation delving into the intricate interplay among workpiece temperature, Thermal-Assisted High-Speed Machining (TA-HSM), cutting force dynamics, and vibration amplitudes during the milling process of SKD11 steel. Beyond a mere exploration, this research endeavors to unveil not only the impact of temperature and velocity on machining dynamics but also to delineate regions characterized by elevated temperature and velocity that exhibit the potential to mitigate cutting forces and vibrations, thereby refining machining methodologies. Experimental inquiries encompassing diverse temperature regimes, coupled with variations in cutting speeds, offer valuable insights into the nexus among temperature, cutting force and vibration amplitude. Of particular significance are the high-speed milling trials conducted under the most elevated admissible support temperature, which furnish elucidation on the ramifications of high speeds on cutting forces and vibrations. This inquiry constitutes a substantive contribution to the field by elucidating the correlation between cutting force and vibration amplitude under the thermal influence and high-speed milling within thermally demanding environments. Moreover, this study extends practical utility by proffering actionable insights into the optimal temperature range and cutting speeds requisite for effecting desired enhancements in machining productivity. By discerning and delineating these optimal parameters, this research endeavors to furnish tangible guidelines for practitioners seeking to optimize their machining processes, thus fostering advancements in both efficiency and precision within the machining domain.","PeriodicalId":14108,"journal":{"name":"International Journal of Modern Physics B","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141108266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing luminescent properties of ZnO: Er3+ through temperature and dopant variation: XRD and emission spectroscopy studies","authors":"Min Yen Yeh, Zhen-Cheng Dong, Ssu-Han Liao, S. Chang","doi":"10.1142/s0217979225400260","DOIUrl":"https://doi.org/10.1142/s0217979225400260","url":null,"abstract":"This study focuses on optimizing the synthesis conditions for the luminescent properties of ZnO:Er3[Formula: see text], a key step toward improving its applicability in optoelectronics. X-ray diffraction (XRD) patterns at [Formula: see text]C with Er3[Formula: see text] dopant concentrations (1, 3 and 5[Formula: see text]wt.%) show the preservation of the crystalline phase of ZnO, indicating that the dopants did not affect the structural integrity. Luminescence properties were observed in ZnO with 1[Formula: see text]wt.% erbium doping at 900–[Formula: see text]C, with the sample at [Formula: see text]C exhibiting the highest emission peak at 533[Formula: see text]nm. The optimal conditions for significant luminescence were identified at [Formula: see text]C, with 5[Formula: see text]wt.% Er3[Formula: see text] showing the most pronounced effect. The practical implications of the achievement of optimal luminescence in ZnO:Er3[Formula: see text] are profound for optoelectronics. These conditions are critical for efficient light-emitting devices, particularly in applications such as light-emitting diodes (LEDs) and lasers, where emission characteristics have a direct impact on performance. In addition, the enhanced luminescence holds great promise for sensors, especially in biomedical and environmental monitoring, as well as in quantum technologies. It contributes to the advancement of quantum sensors and quantum computing applications. This research provides a basis for tailoring the properties of ZnO:Er3[Formula: see text] for specific applications by identifying optimal luminescence conditions at different dopant concentrations. While the identification of optimal conditions has been successful, further research is essential to unravel the underlying mechanisms at the atomic and molecular levels. Overcoming these challenges and exploring additional applications will be critical to realizing the practical impact of these findings in various technological fields, as the study paves the way for advances in optoelectronics, sensing, and quantum information processing.","PeriodicalId":14108,"journal":{"name":"International Journal of Modern Physics B","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141112720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing grid stability through predictive control and fuzzy neural networks in flywheel energy storage systems integration","authors":"Hoa Thi Thanh Lai, Hai Do Trung, K. L. Lai, Duc-Toan Nguyen","doi":"10.1142/s021797922540020x","DOIUrl":"https://doi.org/10.1142/s021797922540020x","url":null,"abstract":"Renewable energy systems, exemplified by solar and wind power, are increasingly integrated into modern power grids to mitigate environmental impact and reduce reliance on fossil fuels. However, the inherent intermittency and unpredictability of renewable energy sources pose challenges to grid stability and reliability. Energy Storage Systems (ESS) offer a promising solution to address these challenges by smoothing out power fluctuations and ensuring a consistent power supply. Among various ESS technologies, Flywheel Energy Storage Systems (FESS) have emerged as a noteworthy contender due to their rapid response times, low operating costs, and extended lifespan. This paper focuses on investigating the operation of a novel unit comprising a solar power system integrated with a Flywheel Energy Storage System (PV-FESS). The aim is to develop an effective control algorithm utilizing adaptive fuzzy neural networks and model predictive control (ANFIS-MPC) to manage power fluctuations stemming from renewable energy sources within the grid. The proposed control strategy aims to optimize the operation of the PV-FESS system by dynamically adjusting the energy absorption or release of the flywheel to maintain grid stability. Simulation studies conducted using Matlab-Simulink/Simcape software validate the efficacy of the ANFIS-MPC algorithm in mitigating abnormal fluctuations from renewable energy sources. The results demonstrate that the PV-FESS system effectively balances power fluctuations, ensuring a stable and reliable power output to the grid.","PeriodicalId":14108,"journal":{"name":"International Journal of Modern Physics B","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141109504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing EDM performance with multi-objective decision-making using copper-coated aluminum electrodes and TOPSIS methodology for Ti-6Al-4V machining","authors":"Vuong Pham Hoang, P. Huu, S. Shirguppikar, Toan Nguyen Duc","doi":"10.1142/s0217979225400235","DOIUrl":"https://doi.org/10.1142/s0217979225400235","url":null,"abstract":"The exploration of Electrical Discharge Machining (EDM) with coated electrodes represents a relatively novel research avenue, thereby yielding limited published research outcomes. The choice of coating material plays a pivotal role in the EDM machining process, and alterations in coating materials can directly influence the adjustment of technological parameters in EDM. Consequently, research dedicated to optimizing these technological parameters for EDM employing coated electrodes is of paramount importance, and it promises to advance the practical implementation of this cutting-edge technique. In this study, we systematically investigate the technological parameters for EDM employing a copper-coated aluminum electrode in the context of Ti-6Al-4V machining. Our research outcomes are framed within a multi-objective optimization paradigm, with a focus on Material Removal Rate (MRR) and Surface Roughness (SR) as vital quality indicators. To address the intricate multi-objective optimization challenge, we have harnessed the combined power of the Taguchi methodology and the Technique for Order of Preference by Similarity to Ideal Solution (TOPSIS). The amalgamation of these techniques enables us to navigate the complexities of EDM parameter optimization effectively. Our findings reveal that the most favorable process parameters entail a configuration of [Formula: see text][Formula: see text]V, [Formula: see text] A, [Formula: see text][Formula: see text][Formula: see text]s, resulting in an MRR of 0.028[Formula: see text]mg/min and an SR of 7.56[Formula: see text][Formula: see text]m. These optimized parameters exemplify a substantial enhancement in machining efficiency and surface quality when utilizing coated electrodes. Moreover, our study scrutinizes the quality of the machined surface under optimal conditions with coated electrodes. We employ the TOPSIS method as a proficient solution for this endeavor, offering a straightforward approach to this intricate calculation process.","PeriodicalId":14108,"journal":{"name":"International Journal of Modern Physics B","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141111774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metal-organic decomposed lanthanum cerium oxide thin films: A study of chemical and surface properties","authors":"Sumit Patil, Deepashri Torawane, Ashok Mahajan, Kuan Yew Cheong","doi":"10.1142/s0217979225400284","DOIUrl":"https://doi.org/10.1142/s0217979225400284","url":null,"abstract":"Lanthanum cerium oxide thin films have been deposited on n-type (100) silicon wafers using the spin coating technique. The post-deposition annealing was performed over spin-coated films. The compositional studies were conducted by performing Fourier transform infrared spectroscopy, Energy dispersive X-ray spectroscopy, and X-ray diffraction. Ellipsometry was used to determine the thickness and atomic force microscopy was performed to understand the surface morphology of the deposited thin films. The effect of rapid thermal annealing at different temperatures over the structural and chemical properties of the LaCeO2 thin films was observed. The FTIR spectra show the formation of silicates at the interface of the oxide and semiconductor, while XRD results show that the films become crystalline with increased annealing temperature. The refractive index was observed to be reduced with an increase in the annealing temperature and a minor reduction in the physical thickness as per the sample standard deviation of 0.2981[Formula: see text]nm.","PeriodicalId":14108,"journal":{"name":"International Journal of Modern Physics B","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141108082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigations of the growth and physical characteristics of ZNF2-DOPED GA2O3 thin films","authors":"Sufen Wei, Chia-Yang Kao, Zhi-Ting Su, En-Chi Tsao, Guo-Syun Chen, Cheng-Fu Yang, Jui-Yang Chang","doi":"10.1142/s0217979225400193","DOIUrl":"https://doi.org/10.1142/s0217979225400193","url":null,"abstract":"This study began by preparing gallium oxide (Ga2O3) doped with zinc fluoride (ZnF2) and manufacturing a target material. Subsequently, electron beam (e-beam) deposition was employed to coat silicon substrates with the prepared material. Different heat treatment conditions were applied to the deposited films, followed by material and electrical property analyses. The investigation explored the impact of pre-sintering Ga2O3 at 950°C to transform it into a more stable [Formula: see text]-phase. For comparative purposes, some samples underwent annealing at 600°C in a nitrogen–hydrogen (95% N[Formula: see text] H2, abbreviated as N[Formula: see text]) mixed gas, which was used as a reduction atmosphere, to increase oxygen vacancies in the ZnF2-doped Ga2O3 thin films and consequently enhance their conductivity. The deposited ZnF2-doped Ga2O3 thin films initially exhibited an amorphous phase, with diffraction peaks appearing only after a 600°C annealing process. Pre-sintering Ga2O3 powder at 950°C promoted the emergence of the [Formula: see text]-phase, and the bandgap value increased after annealing. Measurements using B1500A revealed that sintering and annealing ZnF2-doped Ga2O3 thin films were essential steps to enhance their conductivity. X-ray photoelectron spectroscopy (XPS) further confirmed a significant correlation between the conductivity variation and the concentration of oxygen vacancies. Additionally, it was observed that the use of an N[Formula: see text] mixed gas further increased the presence of oxygen vacancies in the films. The results of this study provide an important method to make Ga2O3 thin films with conductivity, which can be utilized in the fabrication of Ga2O3 thin-film-based semiconductor devices in the future.","PeriodicalId":14108,"journal":{"name":"International Journal of Modern Physics B","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141110846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"P-type Gallium nitride creation through O+ implantation","authors":"Sufen Wei, Hao Xu, Cheng-Fu Yang","doi":"10.1142/s021797922540017x","DOIUrl":"https://doi.org/10.1142/s021797922540017x","url":null,"abstract":"P-type GaN was successfully achieved by vertically implanting positive monovalent cations of oxygen (O[Formula: see text]) into undoped (native n-type with an electron concentration of [Formula: see text][Formula: see text]cm[Formula: see text]) (0001) monocrystalline GaN. This implantation was carried out with an energy of 200[Formula: see text]keV and a dose of [Formula: see text] ions/cm2. In the absence of subsequent rapid thermal annealing (RTA) or when exposed to RTA at 950°C for 10[Formula: see text]s in a nitrogen ambient environment, temperature-dependent Hall measurements in a vacuum consistently indicated stable p-type conductivity. For the sample that underwent subsequent RTA, the room-temperature Hall hole concentration measured [Formula: see text][Formula: see text]cm[Formula: see text], the Hall resistivity was 0.44[Formula: see text][Formula: see text][Formula: see text]⋅[Formula: see text]cm, the Hall hole mobility reached 17.81[Formula: see text]cm2[Formula: see text]⋅[Formula: see text]V[Formula: see text][Formula: see text]⋅[Formula: see text]s[Formula: see text], and the acceptor ionization energy was determined to be 0.08[Formula: see text]eV. The doping efficiency was calculated at 5.5%. O[Formula: see text] ions effectively serve as acceptors, whether annealed or not. The p-type conductivity induced by O[Formula: see text] implantation in GaN is notably advantageous and holds practical significance for the ongoing development of future device technology.","PeriodicalId":14108,"journal":{"name":"International Journal of Modern Physics B","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141109083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}