7th International Symposium on Quality Electronic Design (ISQED'06)最新文献

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Constant impedance scaling paradigm for scaling LC transmission lines LC传输线的恒阻抗缩放范例
7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI: 10.1109/ISQED.2006.38
J. Balachandran, S. Brebels, G. Carchon, W. Raedt, E. Beyne, M. Kuijk, B. Nauwelaers
{"title":"Constant impedance scaling paradigm for scaling LC transmission lines","authors":"J. Balachandran, S. Brebels, G. Carchon, W. Raedt, E. Beyne, M. Kuijk, B. Nauwelaers","doi":"10.1109/ISQED.2006.38","DOIUrl":"https://doi.org/10.1109/ISQED.2006.38","url":null,"abstract":"Reverse scaled LC transmission lines are an effective alternative to on-chip global interconnects which severely limit the chip performance in nano-CMOS technologies. However, the main disadvantage of the LC transmission line approach is their poor wiring density. The scaling of LC transmission lines is formally analyzed with the proposed constant impedance scaling paradigm that simultaneously maximize performance and wiring density. With this paradigm, we show that the LC transmission line implementation would need a minimum pitch of 8mum for line lengths in the range of 10 to 20 mm, considering a low-k dielectric of relative dielectric constant of 2.7","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"45 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116652295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Minimizing ohmic loss in future processor IR events 最小化未来处理器IR事件中的欧姆损耗
7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI: 10.1109/ISQED.2006.88
M. Budnik, K. Roy
{"title":"Minimizing ohmic loss in future processor IR events","authors":"M. Budnik, K. Roy","doi":"10.1109/ISQED.2006.88","DOIUrl":"https://doi.org/10.1109/ISQED.2006.88","url":null,"abstract":"IR events are periods in time when processors draw a high level of steady state operating current. During IR events, ohmic losses occur in the power delivery path. To minimize these ohmic losses, conventional systems use parallelism to reduce the resistance of the power delivery path. As operating currents continue to increase, however, additional remedies may be required to maintain acceptable ohmic losses. We show how a processor with integrated step down converters can be used to reduce the ohmic loss in its power delivery path. In a 130nm technology node, our integrated solution can reduce the delivery path ohmic loss by 32.8%","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114662785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient model update for general link-insertion networks 一般链路插入网络的有效模型更新
7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI: 10.1109/ISQED.2006.55
Zhuo Feng, Peng Li, Jiang Hu
{"title":"Efficient model update for general link-insertion networks","authors":"Zhuo Feng, Peng Li, Jiang Hu","doi":"10.1109/ISQED.2006.55","DOIUrl":"https://doi.org/10.1109/ISQED.2006.55","url":null,"abstract":"Link insertion has been proposed as a means of incremental design to improve performance robustness of linear passive networks. In clock network design, links can be inserted between subnetworks to reduce the variability of clock skews introduced by process and environmental fluctuations, thereby improving the network's immunity to PVT variations. Under these scenarios, it is desired to incrementally compute a reduced-order model for the updated network in order to efficiently evaluate the effectiveness of link insertions. In this paper, we present an efficient model update scheme for general link-insertion networks. By updating the Krylov projection subspace used in model order reduction, the proposed scheme can efficiently compute a reduced-order model for the network with inserted links. More generally, we extend the proposed approach to consider the merging of a (small) multiple-input linear network with a much larger network. We demonstrate the usage of the proposed technique for clock networks and general RLC circuits with an arbitrary number of link insertions as well as the more general case where the inserted links are in the form of a linear network","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130373131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Sensing margin analysis of MLC flash memories using a novel unified statistical model 基于统一统计模型的MLC闪存感知裕度分析
7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI: 10.1109/ISQED.2006.113
Young-Gu Kim, Sang-Hoon Lee, Dae-Han Kim, Jae-Woo Im, Sung-Eun Yu, Dae-Wook Kim, Young-Kwan Park, J. Kong
{"title":"Sensing margin analysis of MLC flash memories using a novel unified statistical model","authors":"Young-Gu Kim, Sang-Hoon Lee, Dae-Han Kim, Jae-Woo Im, Sung-Eun Yu, Dae-Wook Kim, Young-Kwan Park, J. Kong","doi":"10.1109/ISQED.2006.113","DOIUrl":"https://doi.org/10.1109/ISQED.2006.113","url":null,"abstract":"A multilevel level cell (MLC) technique for flash memories reduces the bit cost and enhances the memory density. However, it is difficult to get a required sensing margin for MLC due to the need for the tight threshold voltage control. We present a unified statistical model which can account for inter-and intra-die variations. The proposed model is implemented into SPICE to predict the distribution of performance. The sensing margin is found to increase by about 30% with optimization of sensitive transistors in the sense amplifier and high voltage regulator. The statistical optimization methodology is essential to achieve an optimal sensing margin and it is widely used for other products such as DRAM, SRAM, DDI and CIS","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129632866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A formal verification method of scheduling in high-level synthesis 高级综合中调度的形式化验证方法
7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI: 10.1109/ISQED.2006.10
C. Karfa, C. Mandal, D. Sarkar, S. Pentakota, C. Reade
{"title":"A formal verification method of scheduling in high-level synthesis","authors":"C. Karfa, C. Mandal, D. Sarkar, S. Pentakota, C. Reade","doi":"10.1109/ISQED.2006.10","DOIUrl":"https://doi.org/10.1109/ISQED.2006.10","url":null,"abstract":"This paper describes a formal method for checking the equivalence between the finite state machine with datapath (FSMD) model of the high-level behavioural specification and the FSMD model of the behaviour transformed by the scheduler. The method consists in introducing cutpoints in one FSMD, visualizing its computations as concatenation of paths from cutpoints to cutpoints and finally, identifying equivalent finite path segments in the other FSMD; the process is then repeated with the FSMDs interchanged. The method is strong enough to accommodate merging of the segments in the original behaviour by the typical scheduler such as DLS, a feature very common in scheduling but not captured by many works reported in the literature. It also handles arithmetic transformations","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130117842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 42
Interconnect and thermal-aware floorplanning for 3D microprocessors 三维微处理器的互连和热感知布局
7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI: 10.1109/ISQED.2006.77
W. Hung, G. Link, Yuan Xie, N. Vijaykrishnan, M. J. Irwin
{"title":"Interconnect and thermal-aware floorplanning for 3D microprocessors","authors":"W. Hung, G. Link, Yuan Xie, N. Vijaykrishnan, M. J. Irwin","doi":"10.1109/ISQED.2006.77","DOIUrl":"https://doi.org/10.1109/ISQED.2006.77","url":null,"abstract":"Interconnects are becoming an increasing problem from both performance and power consumption perspective in future technology nodes. The introduction of 3D chip architectures, with their intrinsic capability of reducing wire length, is one of the promising solutions to mitigate the interconnect problem. While interconnect power consumption reduces due to the adoption of 3D designs, the stacking of multiple active layers leads to higher power densities. Thus, high peak temperatures are of major concern in 3D designs. Consequently, we present a thermal-aware floorplanner for 3D architectures. In contrast to most prior work, our floorplanner considers the interconnect power consumption in exploring a thermal-aware floorplan. Our results show that excluding interconnect power can result in peak temperatures being underestimated by as much as 15degC in 90nm technology. Finally, we demonstrate that our floorplanner is effective in lowering peak temperatures using a microprocessor design and four MCNC designs as benchmarks","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117078230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 192
Future Memory Technology Trends and Challenges 未来内存技术的趋势和挑战
7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI: 10.1109/ISQED.2006.69
Changhyun Kim
{"title":"Future Memory Technology Trends and Challenges","authors":"Changhyun Kim","doi":"10.1109/ISQED.2006.69","DOIUrl":"https://doi.org/10.1109/ISQED.2006.69","url":null,"abstract":"As memory market enters the Gigabit and GHz range with consumers demanding ever higher performance and diversified applications, new types of devices are being developed in order to keep up with the scaling requirements for cost reduction. Among these devices are well-known ones such as the recessed channel transistors, but also FinFET and vertically stacked transistors for DRAM and charge trap devices for Flash memory. The latter ones are still not at a manufacturable stage yet. Even more exotic memories implement new materials and stacked architectures on the cell, chip and package level. On the performance side, increasing speeds require higher time resolutions. The future difficulties of process control by far exceed those of conventional planar devices. Therefore device characteristics are expected to show ever increasing PVT variations. As these variations become more and more inevitable, especially as dimensions approach the atomic scale, negative effects on circuit and device performances have to be prevented by new, appropriate methods of 3D device modeling and circuit design which consider the mentioned parameter variations. In this talk such challenges will be discussed as well as some approaches to overcome them. An outlook will also be given about the memory technology trends in the next decades.","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123399907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Constructing current-based gate models based on existing timing library 基于现有时序库构建基于电流的栅极模型
7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI: 10.1109/ISQED.2006.39
A. Kahng, Bao Liu, Xu Xu
{"title":"Constructing current-based gate models based on existing timing library","authors":"A. Kahng, Bao Liu, Xu Xu","doi":"10.1109/ISQED.2006.39","DOIUrl":"https://doi.org/10.1109/ISQED.2006.39","url":null,"abstract":"Current-based gate modeling achieves a new level of accuracy in nanoscale design timing and signal integrity analysis. However, to generate current-based gate models requires additional pre-characterization of the gate, e.g., in the form of a new or an extended timing library format. We construct current-based gate models based on the existing Liberty timing library format without further pre-characterization. We present an inverse problem formulation, and propose to solve the problem by quadratic polynomial regression. Our constructed current-based gate models find applications in timing, power, and signal integrity verifications for improved accuracy in library-compatible flows, e.g., to include power supply voltage drop effect in gate delay calculation without further pre-characterization, to calculate gate supply current, etc. Our experimental results show our constructed current-based gate models achieve slightly less accurate results, e.g., within 4.6%(8.6%), than pre-characterized current-based gate models, e.g., within 4.3%(4.4%), of SPICE results in gate delay calculation for ideal (degraded) power supply voltage, and accurate gate supply current calculation","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122814368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Formal verification of pipelined microprocessors with delayed branches 具有延迟分支的流水线微处理器的形式化验证
7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI: 10.1109/ISQED.2006.68
M. Velev
{"title":"Formal verification of pipelined microprocessors with delayed branches","authors":"M. Velev","doi":"10.1109/ISQED.2006.68","DOIUrl":"https://doi.org/10.1109/ISQED.2006.68","url":null,"abstract":"Presented is an approach for formal verification of pipelined microprocessors with delayed branches, i.e., branch instructions whose immediately following instruction is always executed regardless of whether the branch is taken. Delayed branches are used in the instruction sets of the MIPS, SPARC, and PA-RISC architectures. Because of their sequential semantics that spans several consecutive instruction slots, delayed branches complicate the checking of safety and liveness for pipelined designs. The presented approach is highly automatic compared to previous methods for formal verification of pipelined processors with delayed branches","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116983125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Transaction level error susceptibility model for bus based SoC architectures 基于总线的SoC体系结构的事务级错误敏感性模型
7th International Symposium on Quality Electronic Design (ISQED'06) Pub Date : 2006-03-27 DOI: 10.1109/ISQED.2006.138
Ing-Chao Lin, S. Srinivasan, N. Vijaykrishnan, N. Dhanwada
{"title":"Transaction level error susceptibility model for bus based SoC architectures","authors":"Ing-Chao Lin, S. Srinivasan, N. Vijaykrishnan, N. Dhanwada","doi":"10.1109/ISQED.2006.138","DOIUrl":"https://doi.org/10.1109/ISQED.2006.138","url":null,"abstract":"System on Chip architectures have traditionally relied upon bus based interconnect for their communication needs. However, increasing bus frequencies and the load on the bus calls for focus on reliability issues in such bus based systems. In this paper, we provide a detailed analysis of different kinds of errors and the susceptibility of such systems to such errors on various components that the bus comprises of. With elaborate experiments we determine the effect of a single bit error on the bus system during the course of different transactions. The work demonstrates the fact that only a few signals in a bus system are really critical and need to be guarded. Such transaction based analysis helps us to develop an effective prediction methodology to predict the effect of a single bit error on any application running on a bus based architecture. We demonstrate that our transaction based prediction scheme works with an average accuracy of 92% over all the benchmarks when compared with the actual simulation results","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124504146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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