2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)最新文献

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Modeling for SRAM reliability degradation due to gate oxide breakdown with a compact current model 基于紧凑电流模型的栅极氧化物击穿导致的SRAM可靠性退化建模
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2017-11-01 DOI: 10.1109/DCIS.2017.8311631
Rui Zhang, Taizhi Liu, Kexin Yang, L. Milor
{"title":"Modeling for SRAM reliability degradation due to gate oxide breakdown with a compact current model","authors":"Rui Zhang, Taizhi Liu, Kexin Yang, L. Milor","doi":"10.1109/DCIS.2017.8311631","DOIUrl":"https://doi.org/10.1109/DCIS.2017.8311631","url":null,"abstract":"Gate oxide breakdown (GOBD) degrades the performance of SRAMs. In this paper, a modeling methodology for SRAM reliability degradation due to GOBD is implemented with a compact current model. SRAM lifetime is obtained from Monte Carlo simulations while considering the duty cycle distribution and process variations. We analyzed the lifetime distribution and failure probability of SRAM cells under different stress, and found that the data cache with a duty cycle distribution closer to 50% has a lower failure probability. Moreover, the effect of Error Correcting Codes (ECC) is also studied.","PeriodicalId":136788,"journal":{"name":"2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124384670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Short and long distance marker detection technique in outdoor and indoor environments for embedded systems 嵌入式系统在室外和室内环境中的短距离和长距离标记检测技术
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2017-11-01 DOI: 10.1109/DCIS.2017.8311629
Álvaro Díaz, Daniel Peña, E. Villar
{"title":"Short and long distance marker detection technique in outdoor and indoor environments for embedded systems","authors":"Álvaro Díaz, Daniel Peña, E. Villar","doi":"10.1109/DCIS.2017.8311629","DOIUrl":"https://doi.org/10.1109/DCIS.2017.8311629","url":null,"abstract":"During the last years, the market of embedded vision-based systems has been growing at an accelerated rate. Virtual and augmented reality has the potential to become one of the most innovative technologies for the next decade. One of the most important aspects of these technologies is related to the spatial location of objects or people in defined environments, for which there are several techniques. One of the most widely used is based on visual marker recognition. The main problems of these approaches are related to the accuracy, the changing environments, the processing time, the operating range/distance and the price. The popularization of these technologies produces a pull effect toward the companies developing the best technology at the lowest price. This paper proposes a marker design and an algorithm to detect the markers under different ambient conditions, with a long range to be executed on embedded systems with low computational requirements. The proposed method reduces the existing problems in the state-of-the-art related to the use of different environments and conditions such as different distances or different illumination. Moreover, the requisites of the method are minimal to reduce the cost of deployment.","PeriodicalId":136788,"journal":{"name":"2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116795286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design methodology for power-efficient SC delta-sigma modulators based on switched-VMAs 基于开关式vma的高能效SC δ - σ调制器设计方法
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2017-11-01 DOI: 10.1109/DCIS.2017.8311644
J. Cisneros-Fernández, L. Terés, M. Dei, F. Serra-Graells
{"title":"Design methodology for power-efficient SC delta-sigma modulators based on switched-VMAs","authors":"J. Cisneros-Fernández, L. Terés, M. Dei, F. Serra-Graells","doi":"10.1109/DCIS.2017.8311644","DOIUrl":"https://doi.org/10.1109/DCIS.2017.8311644","url":null,"abstract":"In this work a new design methodology for the low-power design of switched-capacitors delta-sigma modulators using the recently introduced switched-variable-mirror amplifiers (SVMAs) is presented. The effectiveness of the methodology is demonstrated for a third-order single-loop single-bit delta-sigma modulator employing SVMAs designed in a standard 0.18 μm CMOS technology. Results show that the proposed methodology allows for the design of state-of-the-art high-resolution ADCs while greatly boosting design cycles by removing the need for time consuming full electrical simulations.","PeriodicalId":136788,"journal":{"name":"2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127917999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
SPICE model for the ramp rate effect in the reset characteristic of memristive devices 忆阻器件复位特性中斜坡速率效应的SPICE模型
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2017-11-01 DOI: 10.1109/DCIS.2017.8311635
A. Rodríguez-Fernandez, J. Suñé, E. Miranda, M. B. González, F. Campabadal, M. M. A. Chawa, R. Picos
{"title":"SPICE model for the ramp rate effect in the reset characteristic of memristive devices","authors":"A. Rodríguez-Fernandez, J. Suñé, E. Miranda, M. B. González, F. Campabadal, M. M. A. Chawa, R. Picos","doi":"10.1109/DCIS.2017.8311635","DOIUrl":"https://doi.org/10.1109/DCIS.2017.8311635","url":null,"abstract":"This paper addresses the role played by the voltage ramp rate in the reset transient of resistive switching TiN/Ti/HfÜ2/W devices. The reset parameters extracted from experimental current-voltage (I-V) characteristics were analyzed in the charge-flux domain typical of memristive structures. The obtained results allowed proposing an analytic expression for the reset voltage as a function of the ramp rate. This relationship was included in the memdiode model for the SPICE simulator. Close agreement between simulations and experimental results was achieved.","PeriodicalId":136788,"journal":{"name":"2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126372260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Break even time analysis using empirical overhead parameters for embedded systems on SOTB technology 基于SOTB技术的嵌入式系统的经验开销参数的盈亏平衡时间分析
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2017-11-01 DOI: 10.1109/DCIS.2017.8311633
Carlos Cortes, H. Amano, N. Yamasaki
{"title":"Break even time analysis using empirical overhead parameters for embedded systems on SOTB technology","authors":"Carlos Cortes, H. Amano, N. Yamasaki","doi":"10.1109/DCIS.2017.8311633","DOIUrl":"https://doi.org/10.1109/DCIS.2017.8311633","url":null,"abstract":"It is essential for any embedded systems and increasing popularity of Internet of Things (IoT) be energy efficient. Such systems tend to work intermittently and reducing leakage in the idle time is essential. Energy reduction techniques bring the system to a low power mode which also provokes transition overheads. If such overheads are not considered, the task may not be schedulable under a given deadline. To get a gain in energy savings, the idle state must be longer than a minimum required time. This time is referred as Break Even Time (BET). To properly design efficient algorithms and schedulers we must calculate and include the BET. In this paper, we present the first studies to examine the BET using accurate parameters extracted from a real chip using Silicon On Thin Box (SOTB) technology employing Body Bias Control (BB) energy saving technique. In this study, we demonstrate the BET range for SOTB microcontrollers, on the order of 0.5ms up to 1ms.","PeriodicalId":136788,"journal":{"name":"2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126887236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Crypto-Test-Lab for security validation of ECC co-processor test infrastructure 用于ECC协处理器测试基础设施安全验证的Crypto-Test-Lab
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2017-11-01 DOI: 10.1109/DCIS.2017.8311632
E. Lupon, R. Rodríguez-Montañés, S. Manich
{"title":"Crypto-Test-Lab for security validation of ECC co-processor test infrastructure","authors":"E. Lupon, R. Rodríguez-Montañés, S. Manich","doi":"10.1109/DCIS.2017.8311632","DOIUrl":"https://doi.org/10.1109/DCIS.2017.8311632","url":null,"abstract":"Elliptic Curve Cryptography (ECC) is a technology for public-key cryptography that is becoming increasingly popular because it provides greater speed and implementation compactness than other public-key technologies. Calculations, however, may not be executed by software, since it would be so time consuming, thus an ECC co-processor is commonly included to accelerate the speed. Test infrastructure in crypto co-processors is often avoided because it poses serious security holes against adversaries. However, ECC co-processors include complex modules for which only functional test methodologies are unsuitable, because they would take an unacceptably long time during the production test. Therefore, some internal test infrastructure is always included to permit the application of structural test techniques. Designing a secure test infrastructure is quite a complex task that relies on the designer's experience and on trial & error iterations over a series of different types of attacks. Most of the severe attacks cannot be simulated because of the demanding computational effort and the lack of proper attack models. Therefore, prototypes are prepared using FPGAs. In this paper, a Crypto-Test-Lab is presented that includes an ECC co-processor with flexible test infrastructure. Its purpose is to facilitate the design and validation of secure strategies for testing in this type of co-processor.","PeriodicalId":136788,"journal":{"name":"2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131407628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Full-3D printed electronics process using stereolitography and electroless plating 全3d打印电子工艺使用立体光刻和化学镀
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2017-11-01 DOI: 10.1109/DCIS.2017.8311624
A. Salas-Barenys, N. Vidal, J. Sieiro, J. López-Villegas, B. Medina-Rodriguez, F. Ramos
{"title":"Full-3D printed electronics process using stereolitography and electroless plating","authors":"A. Salas-Barenys, N. Vidal, J. Sieiro, J. López-Villegas, B. Medina-Rodriguez, F. Ramos","doi":"10.1109/DCIS.2017.8311624","DOIUrl":"https://doi.org/10.1109/DCIS.2017.8311624","url":null,"abstract":"This paper presents a new process for 3D circuit fabrication based on two main steps: additive manufacturing of the plastic or ceramic substrate, through a stereolitographic 3D printer, and a copper electroless plating metalization process. Some of the available printable materials have been characterized in order to find permittivity and losses of the dielectrics. The metalization part has also been evaluated by measuring the square resistance of different samples. The capabilities of the process have been demonstrated with a full-3D circuit.","PeriodicalId":136788,"journal":{"name":"2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124474506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Merging smart wearable devices and wireless mesh networks for collaborative sensing 融合智能可穿戴设备和无线网状网络进行协同传感
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2017-11-01 DOI: 10.1109/DCIS.2017.8311637
Jaime Zornoza, Gabriel Mujica, J. Portilla, T. Riesgo
{"title":"Merging smart wearable devices and wireless mesh networks for collaborative sensing","authors":"Jaime Zornoza, Gabriel Mujica, J. Portilla, T. Riesgo","doi":"10.1109/DCIS.2017.8311637","DOIUrl":"https://doi.org/10.1109/DCIS.2017.8311637","url":null,"abstract":"Wireless sensor networks have become one of the most productive and cost-effective ways of gathering data from the environment in a distributed and unattended fashion, and are considered as one of the key technologies of the twenty-first century in the field of pervasive systems, indeed contributing in the implementation of Internet-of-Things based ecosystems. However, the wide range of different hardware and software platforms, communication capabilities and data management techniques, makes the integration of heterogeneous technologies a must, so that the final success of the target deployment and the underlying service provision can be assured. In this way, the combination and interoperation of wearable technologies with wireless sensor networks is demonstrated in this work towards the implementation of urban collaborative sensing, particularly considering a twofold integration process: seamless connectivity among wireless mobile and deployable devices, as well as hardware-software embedded support for dynamic interaction with sensing/service capabilities.","PeriodicalId":136788,"journal":{"name":"2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130589719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
CCO-based analog front-end for iStents 基于cco的iStents模拟前端
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2017-11-01 DOI: 10.1109/DCIS.2017.8311643
J. Miguel, Y. Lechuga, M. A. Allende, M. Martinez
{"title":"CCO-based analog front-end for iStents","authors":"J. Miguel, Y. Lechuga, M. A. Allende, M. Martinez","doi":"10.1109/DCIS.2017.8311643","DOIUrl":"https://doi.org/10.1109/DCIS.2017.8311643","url":null,"abstract":"This paper presents a low power analog front-end designed to be part of an intelligent stent for restenosis monitoring in a distal pulmonary artery. The heterogeneous front-end comprises a capacitive MEMS pressure sensors for the acquisition of physiological signals, as well as 0.18 μm CMOS electronics for wireless device powering and data transmission, performed using the ISM 433.92 MHz band. The architecture includes a voltage rectifier, a voltage reference, a voltage regulator, an oscillator and a MEMS pressure sensor. A modified Sawtooth oscillator has been designed to allow the operation of the system under ramped-voltage biasing signals. Post-layout simulations present a good correlation with the analytical model of the system, showing an average power consumption of 11 μW and a frequency-to-capacitance sensitivity of 0.1569 MHz/pF.","PeriodicalId":136788,"journal":{"name":"2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121102025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Bulk-based DC offset calibration for low-power memristor array read-out system 小功率忆阻阵列读出系统的大体积直流偏置校正
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2017-11-01 DOI: 10.1109/DCIS.2017.8311626
C. Mohan, L. Camuñas-Mesa, E. Vianello, L. Perniola, C. Reita, J. M. de la Rosa, T. Serrano-Gotarredona, B. Linares-Barranco
{"title":"Bulk-based DC offset calibration for low-power memristor array read-out system","authors":"C. Mohan, L. Camuñas-Mesa, E. Vianello, L. Perniola, C. Reita, J. M. de la Rosa, T. Serrano-Gotarredona, B. Linares-Barranco","doi":"10.1109/DCIS.2017.8311626","DOIUrl":"https://doi.org/10.1109/DCIS.2017.8311626","url":null,"abstract":"Memristors in neuromorphic circuits typically need to drive currents of many mA because their Low Resistance State (LRS) is in the order of a few kΩ and many devices need to be activated simultaneously which results in high power consumptions. Reducing read-out pulses amplitudes below the typical 0.1V is not trivial, as offset voltages of read-out circuits start to affect the results. This paper presents a three-stage cascaded calibration to compensate for the resting offset voltage of crossbar lines generated in the amplifiers driving memristive devices in memristor array read-out systems. The proposed calibration technique is based on adjusting the bulk voltage of the input differential pairs by means of a switchable cascade of resistor ladders. As a result, the calibrated offset voltage can be further reduced with the number of stages in the cascade, leading to a calibration voltage step below 0.1mV — only limited in practice by mismatch and electrical noise. The circuit has been designed in 130nm CMOS technology, and its operation has been verified with oxide-based resistive memory (OxRAM) devices operated in binary mode to implement synapses in neuro-morphic circuits. Layout-extracted simulations considering PVT variations are considered to validate the presented calibration technique.","PeriodicalId":136788,"journal":{"name":"2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115035562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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