SPICE model for the ramp rate effect in the reset characteristic of memristive devices

Abstract

This paper addresses the role played by the voltage ramp rate in the reset transient of resistive switching TiN/Ti/HfÜ2/W devices. The reset parameters extracted from experimental current-voltage (I-V) characteristics were analyzed in the charge-flux domain typical of memristive structures. The obtained results allowed proposing an analytic expression for the reset voltage as a function of the ramp rate. This relationship was included in the memdiode model for the SPICE simulator. Close agreement between simulations and experimental results was achieved.