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2020 21st International Conference on Electronic Packaging Technology (ICEPT)最新文献

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Organic Substrate Trace Copper-to-copper Dendrite Growth Analysis 有机衬底微量铜到铜枝晶生长分析
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9203001
Yingjia Tang, Xu Wang, Honny Chen, K. Sun, Cong Zhang
{"title":"Organic Substrate Trace Copper-to-copper Dendrite Growth Analysis","authors":"Yingjia Tang, Xu Wang, Honny Chen, K. Sun, Cong Zhang","doi":"10.1109/ICEPT50128.2020.9203001","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9203001","url":null,"abstract":"In one BGA package, short failure is been detected by electrical test after JEDEC Bias-HAST condition; after investigation, the BGA organic substrate solder mask to core material adhesion degraded by moisture during MSL, induced delamination, then during Bias-HAST, Cu dendrite formed and grew along delamination interface and touch another copper trace caused short finally.In this paper, the Copper trace dendrite growth condition & mechanism be introduced, also interacted design & material property of BGA organic substrate, to clarify the organic substrate material selection & design risk on Copper to copper dendrite grow to short risk.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123454056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reliability assessment of flip chip interconnect electronic packaging under thermal shocks 热冲击下倒装芯片互连电子封装可靠性评估
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202965
D. Su, Dan Zhao, Lejun Zhang, Huihui Yang, Cen Wang, Wenyu Jiang
{"title":"Reliability assessment of flip chip interconnect electronic packaging under thermal shocks","authors":"D. Su, Dan Zhao, Lejun Zhang, Huihui Yang, Cen Wang, Wenyu Jiang","doi":"10.1109/ICEPT50128.2020.9202965","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202965","url":null,"abstract":"In the paper, 3968 solder bumps and underfills were prepared on ceramic substrates with flip chip method. After thermal shocks the solder joints of serial number before 24 were left wrapped and the solder joints of serial number after 39 were right wrapped. The average spreading area and diameter of solder joints were 4681 μm2 and 119 μm, respectively. The solder joints with small serial number were left offset and the maximum offset of left was 28 μm. Inversely, the solder joints with big serial number were right offset and the maximum offset of right was 31μm. The deviation of solder joints on both sides were the most evident. This might be owing to CTE mis-matching between silicon chip and ceramic substrate. Besides, the IMC layer of both sides was mainly Cu6Sn5. The IMC layer on top of Cu pillar was Ni and Ni6Sn5.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124909734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Synthesis of Size-controllable Copper Nanoparticles: Electrochemical Behaviors and Sintering Property 尺寸可控铜纳米颗粒的合成:电化学行为和烧结性能
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202677
Xian Zeng, Guannan Yang, Yu Zhang, C. Cui
{"title":"Synthesis of Size-controllable Copper Nanoparticles: Electrochemical Behaviors and Sintering Property","authors":"Xian Zeng, Guannan Yang, Yu Zhang, C. Cui","doi":"10.1109/ICEPT50128.2020.9202677","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202677","url":null,"abstract":"With the fast development of electronic packaging technology, the chip integration density becomes higher, and the interconnecting trace pitch becomes smaller. The 3D stacked packaging technology has become an important route for the continuation of \"Moore’s law\". However, the traditional interconnect materials such as Sn and Ag can hardly meet the requirement for the interconnection of 3D ultra-narrow pitch due to their low melting point, high cost and electromigration under high electric field. As an alternative material, the Cu nanoparticles (CuNPs) can obtain interconnecting performance similar to Ag, with only one-tenth of cost. CuNPs are not susceptible to electromigration under electric fields, and can be sintering at low temperature to realize the interconnection of ultra-narrow pitch. In this paper, size-controllable and antioxidative CuNPs were prepared via wet-chemical redox method, with the selections of copper hydroxide as the main salt, ascorbic acid as the reducing agent, and polyvinylpyrrolidone (PVP-K30) as the coating agent. The as-synthesized CuNPs showed near spherical shape, high dispersibility, uniform size distribution of 102±36 nm, and were not oxidized after 30 days storage in air. The formation process of these CuNPs were also investigated by electrodeposition method. The results revealed that with the addition of PVP coating agent, the over-potential for the reduction of Cu2+ to CuNPs will increase, and the nucleation/growth rate of Cu will be restricted. As a result, finer CuNPs can be obtained.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122544129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on Transmission Performance of New Coplanar Waveguide Transmission Line Based on TSV Array Grounding 基于TSV阵列接地的新型共面波导传输线传输性能研究
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9201912
Zhengwang Li, Zhensong Li, M. Miao
{"title":"Research on Transmission Performance of New Coplanar Waveguide Transmission Line Based on TSV Array Grounding","authors":"Zhengwang Li, Zhensong Li, M. Miao","doi":"10.1109/ICEPT50128.2020.9201912","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9201912","url":null,"abstract":"Three dimensional integrated circuit (3D IC) based on through-silicon-via (TSV) is gaining significant importance in semiconductor industry. For the three dimensional integration of microsystems, the TSV transmission structure of the passive integrated silicon-based adapter board achieves low-loss transmission requirements. A grounded Coplanar Waveguide (GCPW) structure with TSV array ground and a GCPW-TSV-GCPW structure for a silicon-based adapter board are proposed in this paper. The transmission performance is analyzed and optimized by considering the grounded TSV array, signal TSV and coplanar waveguide structure all together. In order to achieve lower loss transmission performance, an improved differential GCPW TSV-GCPW structure is proposed and analyzed as well. All aforementioned structural models are simulated and analyzed by HFSS in the frequency range of 0.1-30 GHz. The simulation results show that the insertion loss of the GCPW-TSV-GCPW structure is below −7.9dB. The insertion loss and return loss of the differential GCPW-TSV-GCPW structure are less than - 2.5dB and increased by 5dB, respectively. TSV structural parameter is also investigated to further understand how the TSV size makes impact on signal transmission performance.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123928518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical Simulation study on variation of phosphor size for High Power CSP LED 大功率CSP LED荧光粉尺寸变化的光学模拟研究
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/icept50128.2020.9202886
Na
{"title":"Optical Simulation study on variation of phosphor size for High Power CSP LED","authors":"Na","doi":"10.1109/icept50128.2020.9202886","DOIUrl":"https://doi.org/10.1109/icept50128.2020.9202886","url":null,"abstract":"Question: The format of the manuscript is inconsistent with the full paper template(abstractI have improved the format of the abstract for the manuscript !","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125187895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal design and simulation of LEDs automotive headlamps led汽车前照灯的热设计与仿真
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202953
Qiming Wu, C. Liang, Liansheng Huang
{"title":"Thermal design and simulation of LEDs automotive headlamps","authors":"Qiming Wu, C. Liang, Liansheng Huang","doi":"10.1109/ICEPT50128.2020.9202953","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202953","url":null,"abstract":"With the rapid development of society, the new generation of high-power LED light source has many advantages, such as low energy consumption, fast response, vibration resistance, high efficiency and long service life. However, the problem of heat dissipation of high-power LED also makes people rack their brains. How to efficient heat dissipation is the key to improve the output power and extend the working life. In this paper, the fluid heat transfer simulation analysis was carried out by floEFD embedded in UG environment, and the simulation of PCB related materials of LED headlights and the influence of fin length on LED headlights were carried out to solve the problem of the coupling relationship between LED temperature and thermal power in the simulation process. At the same time, in order to improve the heat dissipation better, a heat pipe is added to the simulation, and the temperature of LED chip can be reduced better through the combination of heat pipe and fin.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126294475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Stealth Dicing Parameters on Singulation Defects and Die Strength 隐形切割参数对模拟缺陷和模具强度的影响
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202940
Yitong Xie, Xundi Zhang, Chenlin Yang, Liming Gao, Ming Li
{"title":"Effects of Stealth Dicing Parameters on Singulation Defects and Die Strength","authors":"Yitong Xie, Xundi Zhang, Chenlin Yang, Liming Gao, Ming Li","doi":"10.1109/ICEPT50128.2020.9202940","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202940","url":null,"abstract":"This paper describes the reduction of singulation defects and die strength enhancement in Stealth Dicing before Grinding process. The process was carried on wafers which are 710μm in thickness at a laser wavelength of 1342nm, after the SD (stealth dicing) process, wafers need to be grinded to 60μm with BG (back grinding) method. After SD, laser scattered damage scattered damage and cleavage fracture have been analyzed. After BG, the ratios of singulative dies that have different defects such as silicon dust and kerf defect have been calculated. In this paper, the optimization of the SD process has led to the reduction of the SD-related defects and die strength has also been improved. The kerf loss after SD has been calculated and 100% kerf has been achieved. Besides, die strength has been increased by 19.53%, which can illustrate the high quality of laser singulation.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129672242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Copper pumping behaviors of TSV and experimental investigations of the mechanism TSV的铜泵送行为及其机理的实验研究
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202996
F. Su, Bowen Zhang
{"title":"Copper pumping behaviors of TSV and experimental investigations of the mechanism","authors":"F. Su, Bowen Zhang","doi":"10.1109/ICEPT50128.2020.9202996","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202996","url":null,"abstract":"Through-silicon-Vias (TSV) is a key component of 3D packaging, its reliability is the core concern of engineers. Annealing is usually though to be an effective way to remove the residual stress in TSV, however, it was reported that copper pumping occurred during this process, while the interface of copper filler and Silicon chip was kept intact, and we have shown that residual stress of TSV was increased rather than decreased after annealing due to copper pumping. Besides the case of annealing, copper pumping also occurred during thermal cycling, and the pumped height increased with the number of cycles, the RDL was even broken by over large plastic deformation caused by copper pumping. In this paper, the micro-mechanism of the copper pumping was investigated with the aid of experiment and theoretical analysis. Signal of acoustic emission was monitored during the annealing of TSV and no obvious signal due to plastic deformation was found. Then it was suggested that creep of interfacial layer between copper filler and silicon chip should be responsible for the copper pumping.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129632914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of suction nozzle on a new SMT silicone rubber keypad 新型SMT硅橡胶键盘吸嘴设计
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202533
Keye Wu, Xiaosong Ma, Z. Zhong, Zihao Ming, Changhua Tang
{"title":"Design of suction nozzle on a new SMT silicone rubber keypad","authors":"Keye Wu, Xiaosong Ma, Z. Zhong, Zihao Ming, Changhua Tang","doi":"10.1109/ICEPT50128.2020.9202533","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202533","url":null,"abstract":"Conductive silicone rubber keypads, possessed outstanding mechanical properties, are widely used in electrical products. However, the assembly of silicone rubber keypad on printed circuit board(PCB) is done by hand. We combined SMT Surface Mount Technology(SMT) with interference fit principle. In this paper, an automatic assembly technology for silicone rubber keypads was developed without solder and the corresponding suction nozzle was designed. The diameter of the pin is larger than that of the PCB hole, so that the pin and the PCB hole can produce interference fit. The working principle of this technology is that the designed SMT suction nozzle is used to suck the silicone rubber keypad, and then the silicone rubber keypad is moved to the directly above the PCB hole with the suction nozzle, and then the two positioning pins of the silicone rubber are pressed into the PCB holes by the two thimbles of the suction nozzle, so that the PCB hole and the silicone rubber keypad positioning pins produce interference fit. Secondly, three suction nozzles, surface suction type, integral suction type and thimble insertion type, are proposed by the different parts of the suction nozzles. The internal structure of each nozzle is designed into four types: cylindrical, circular table, rectangular and circular arc. The suitable and reliable nozzle is selected by fluid simulation and stress simulation. The simulated result shows that the structure proposed is feasible. The suction nozzle and silicone rubber keypads were manufactured for testing on the SMT machine. The test results show that this method is useful and it can be successfully automated.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128392374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of Magnetic Field on Microstructure and Properties of Smart Solder 磁场对智能焊料组织和性能的影响
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202929
Hongbo Xu, Xuchao Zhang, Hongyun Zhao, Mingyu Li
{"title":"Effect of Magnetic Field on Microstructure and Properties of Smart Solder","authors":"Hongbo Xu, Xuchao Zhang, Hongyun Zhao, Mingyu Li","doi":"10.1109/ICEPT50128.2020.9202929","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202929","url":null,"abstract":"The smart solder has been developed for the geometry control by the external magnetic field, which could be attractive for the application in the electronic packaging industry. However, the knowledge about the smart solder is still in a preliminary stage. In this paper, for the soldering of smart solder under an external magnetic field, the effect of Ni content and magnetic field on the wetting and spreading of solder was studied by melting the smart solder balls on a polished copper plate. The mechanism of magnetic field was analyzed for the wetting and spreading process of smart solders. The interfacial IMC between the smart solder and the copper plate was studied. The influence of the magnetic field on the interface morphology and phase of the IMC was analyzed. The mechanical properties, interface IMC and fracture morphology of copper soldering were compared with and without magnetic field, and the effect of magnetic field on the soldering joint was comprehensively analyzed.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128644259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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