IEEE Transactions on Magnetics最新文献

{"title":"IEEE Transactions on Magnetics Institutional Listings","authors":"","doi":"10.1109/TMAG.2025.3561647","DOIUrl":"https://doi.org/10.1109/TMAG.2025.3561647","url":null,"abstract":"","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 5","pages":"C4-C4"},"PeriodicalIF":2.1,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10976470","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Magnetics Publication Information","authors":"","doi":"10.1109/TMAG.2025.3561645","DOIUrl":"https://doi.org/10.1109/TMAG.2025.3561645","url":null,"abstract":"","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 5","pages":"C3-C3"},"PeriodicalIF":2.1,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10976374","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Magnetics Society Information","authors":"","doi":"10.1109/TMAG.2025.3561641","DOIUrl":"https://doi.org/10.1109/TMAG.2025.3561641","url":null,"abstract":"","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 5","pages":"C2-C2"},"PeriodicalIF":2.1,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10976465","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143870842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TMAG.2025.3564111","DOIUrl":"https://doi.org/10.1109/TMAG.2025.3564111","url":null,"abstract":"","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 5","pages":"1-1"},"PeriodicalIF":2.1,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10976461","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Performance Analysis of Hybrid VCMA + STT-MTJ/CMOS Circuits for CIM Architecture","authors":"Prashanth Barla","doi":"10.1109/TMAG.2025.3563418","DOIUrl":"https://doi.org/10.1109/TMAG.2025.3563418","url":null,"abstract":"The emerging computation-in-memory (CIM) architecture effectively overcomes the limitations, such as memory wall and rise in the standby power dissipation associated with the conventional von-Neumann structure. In this article, we developed hybrid voltage-controlled magnetic anisotropy-assisted spin-transfer torque magnetic tunnel junction (VCMA + STT MTJ) circuits for the CIM architecture. Initially, we have proposed a novel VCMA + STT MTJ write circuit that is 63.35% and 94.86% more energy efficient with 50.87% and 59.42% lower transistors compared to spin-Hall effect-assisted (SHE) MTJ STT and STT MTJs, respectively. Subsequently, development of VCMA + STT non-volatile full adder (NVFA) with the novel write circuit unravels its supremacy with 42.21% and 89.25% reduction in total power dissipation, 35.16% and 41% lower transistor count, 31.93% and 95.13% faster write speed, and 62.79% and 99.53% lesser write power delay product (PDP) compared with SHE + STT-NVFA and STT-NVFA, respectively. Using VCMA + STT-NVFA, we have developed a non-volatile (NV)-arithmetic logic unit (ALU) to perform addition, subtraction, and all the logic operations. Comparison of the same has been conducted with its CMOS counterpart to show that NV-ALU is better in terms of power dissipation, and transistor count by 12.12% and 15.71%, respectively. Furthermore, we have extended the NV-ALU for 4 bit operations to show its feasibility for higher bit operations.","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 6","pages":"1-12"},"PeriodicalIF":2.1,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-Temperature Deposition of Graphite Coating on La(Fe, Co, Si)13B0.2 for Room-Temperature Magnetic Refrigeration","authors":"Chunhui Gao;Naikun Sun;Zhen Yan;Quanhui Zhang;Juan Cheng;Jiaohong Huang;Xinguo Zhao;Yingwei Song","doi":"10.1109/TMAG.2025.3562599","DOIUrl":"https://doi.org/10.1109/TMAG.2025.3562599","url":null,"abstract":"Due to the larger magnetic entropy change <inline-formula> <tex-math>$Delta S_{M}$ </tex-math></inline-formula> and the much lower raw material cost, La(Fe, Co, Si)13 materials have the potential to replace the room-temperature magnetic refrigeration prototype material Gd. In this work, we have developed a simple chemical vapor deposition (CVD) method for in situ graphite deposition on the surface of La(Fe, Co, Si)13B0.2. Facilitated by the decomposition of the solid carbon-source polyethylene glycol (PEG), the CVD process could be carried out at a low temperature of <inline-formula> <tex-math>$400~^{circ }$ </tex-math></inline-formula>C and in a short duration of 20 min, which ensures no <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-Fe precipitation from and carbon atom diffusion into the La–Fe–Si material. These 400–700 nm-thick coatings could significantly enhance the anti-corrosive property with a positive shift of corrosion potential <inline-formula> <tex-math>${E} _{text {corr}}$ </tex-math></inline-formula> from −788 to −600 mV and a reduction of the corrosion current density <inline-formula> <tex-math>${I} _{text {corr}}$ </tex-math></inline-formula> from <inline-formula> <tex-math>$1.67times 10^{-5}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$9.14times 10^{-6}$ </tex-math></inline-formula> A/cm2, accompanied by a concurrent enhancement of the thermal conductivity. More favorably, a large <inline-formula> <tex-math>$Delta S_{M}$ </tex-math></inline-formula> of ~4 J/kg<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>K at 286 K and a relative cooling power (RCP) value of ~98 J/kg in 0–1.5 T were maintained.","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 6","pages":"1-9"},"PeriodicalIF":2.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"USCIM: Computing-in-Memory With Unipolar Switching SOT-MRAM","authors":"Haiwen Li;Enyi Yao;Pei Qin;Sheng Jiang","doi":"10.1109/TMAG.2025.3561873","DOIUrl":"https://doi.org/10.1109/TMAG.2025.3561873","url":null,"abstract":"This brief presents an arithmetic paradigm for computing-in-memory (CIM) using unipolar switching spin-orbit-torque magnetic random access memory (SOT-MRAM) devices. The proposed MRAM array comprised two transistors and one SOT magnetic tunnel junction (MTJ) cell and achieves basic Boolean logic operations [<sc>and</small>, <sc>xor</small>, <sc>or</small>, majority (MAJ)] and full-adder (FA) operations. The hybrid spintronics/CMOS simulation results show that the proposed designs improve latency and energy consumption by about 34%–132% and 212%–489% compared with the existing design, respectively. Monte Carlo simulations further prove the robustness of our design for the effectiveness of write/read operations.","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 6","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Neural-Network-Based Source Reconstruction for Estimating the Emission of Linear Synchronous Motors in Vehicle Bodies","authors":"Jiahui Zhang;Dan Zhang;Yinghong Wen;Jinbao Zhang","doi":"10.1109/TMAG.2025.3561684","DOIUrl":"https://doi.org/10.1109/TMAG.2025.3561684","url":null,"abstract":"To quickly and accurately characterize the effects of linear synchronous motors (LSMs) in the electromagnetic suspension (EMS) maglev system on the surrounding electromagnetic environment, the field-source equivalent model for electromagnetic emission with obstacles in the near zone was built using cascade neural network that integrates convolutional neural networks (CNNs) and backpropagation neural networks (BPNNs). The influence of the train body on the electromagnetic emissions of linear motors is equated with the magnetic field shielding effectiveness. Results by the proposed model were validated by measurement and full-wave simulation results.","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 6","pages":"1-10"},"PeriodicalIF":2.1,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning the Curie Temperature of Fe3O4 to Achieve Automated Magnetic Hyperthermia","authors":"Kabir S. Suraj;Gen Tatara;Hiroshi Katayama-Yoshida;M. Hussein N. Assadi","doi":"10.1109/TMAG.2025.3560645","DOIUrl":"https://doi.org/10.1109/TMAG.2025.3560645","url":null,"abstract":"We examine the impact of samarium doping on the Curie temperature (<inline-formula> <tex-math>$T_{c}$ </tex-math></inline-formula>) of magnetite through density functional theory (DFT) calculations. Upon calculating the total energies of the different spin orientations among the cations in Fe 3O 4:Sm, we realized that the Sm atom prefers to substitute an Fe from the octahedral site with a spin opposing that of the atom it replaces. Our results show that Sm doping weakens the ferrimagnetic J coupling between the octahedral and tetrahedral Fe atoms. As a result, the normalized magnetization profile across a broad temperature range shows that the samarium-doped compound (Fe3O4:Sm) has a <inline-formula> <tex-math>$T_{c}$ </tex-math></inline-formula> of approximately 319 K, which aligns well with the target range for self-regulated magnetic nanoparticle hyperthermia (MNH) applications. Furthermore, we demonstrated that Sm doping in magnetite with high electron concentrations of <inline-formula> <tex-math>$10^{22} mathrm{~cm}^{-3}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$10^{23} mathrm{~cm}^{-3}$ </tex-math></inline-formula> almost nearly preserves the Hall coefficient (<inline-formula> <tex-math>$R_{H}$ </tex-math></inline-formula>), implying that Fe3O4:Sm can be synthesized without significantly altering magnetite’s ability for tumor tissue identification based on the Hall effect.","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 6","pages":"1-5"},"PeriodicalIF":2.1,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantifying the Impact of Arbitrary Magnetic Field Perturbation on the Write Error Rate of Spin-Orbit-Torque Random Access Memory","authors":"Xuejie Xie;Wenlong Yang;Hengan Zhou;Kejie Huang;Enlong Liu","doi":"10.1109/TMAG.2025.3559973","DOIUrl":"https://doi.org/10.1109/TMAG.2025.3559973","url":null,"abstract":"Spin-orbit-torque (SOT) magnetic random access memory (MRAM) is an emerging nonvolatile memory technology that uses the SOT effect to switch the magnetization direction of magnetic storage elements. Compared with spin-transfer torque (STT) MRAM, SOT-MRAM exhibits a faster write speed and higher endurance, making it a promising candidate for next-generation high-performance embedded memory or cache applications. However, the magnetic storage characteristics of MRAM render it susceptible to perturbation from external magnetic fields. In this study, we systematically and quantitatively investigated the impact of an arbitrary magnetic field <inline-formula> <tex-math>$mu _{0}mathbf {H}_{text {arb}}$ </tex-math></inline-formula> orientation (<inline-formula> <tex-math>$theta $ </tex-math></inline-formula>, <inline-formula> <tex-math>$varphi $ </tex-math></inline-formula>) on the write error rate (WER) of SOT-MRAM based on the Fokker-Planck equation (FPE) method and elucidated the underlying physical mechanism of magnetic field direction sensitivity. The results indicate that variations in (<inline-formula> <tex-math>$theta $ </tex-math></inline-formula>, <inline-formula> <tex-math>$varphi $ </tex-math></inline-formula>) can lead to different degrees of shift in the WER-switching time curve, eventually causing fluctuations in the WER at a fixed write pulsewidth. This phenomenon originates from the modulation of the magnetization probability density distribution by the angle between <inline-formula> <tex-math>$mu _{0}mathbf {H}_{text {arb}}$ </tex-math></inline-formula> and magnetization vector m. This research provides crucial insights into the effect of <inline-formula> <tex-math>$mu _{0}mathbf {H}_{text {arb}}$ </tex-math></inline-formula> on the WER of SOT-MRAM and emphasizes the importance of parameter adjustments to enhance the magnetic immunity of WER to <inline-formula> <tex-math>$mu _{0}mathbf {H}_{text {arb}}$ </tex-math></inline-formula> for improved write reliability under complex operating conditions.","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 6","pages":"1-5"},"PeriodicalIF":2.1,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}