发布求助
文献互助 智能选刊 最新文献

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献

筛选
英文 中文
A new concept for power-dividing networks with controllable power-division ratios controlled by phase shifters 一种由移相器控制的分功比可控的分功网络新概念
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588379
Yongle Wu, Lingxiao Jiao, Bojun Zhang, Yuan’an Liu
{"title":"A new concept for power-dividing networks with controllable power-division ratios controlled by phase shifters","authors":"Yongle Wu, Lingxiao Jiao, Bojun Zhang, Yuan’an Liu","doi":"10.1109/IMWS-AMP.2016.7588379","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588379","url":null,"abstract":"In designing a power-dividing network, it is a great challenge to alter the power-division ratios. In this research, a new topology of a power-dividing network is proposed, which is simply constructed by two equal or unequal quadrature couplers and two phase-shifting circuits cascaded between the two couplers. In this structure, the power-division ratios can be easily controlled or tunned by altering the power division of the separated couplers and the phase shift of the phase shifters.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114782849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A research of band-pass filter with highly steep band-edge based on semi-lumped structure 基于半集总结构的高陡带边带通滤波器研究
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588437
Xin Wang, Yi Liu, Yong-sheng Dai
{"title":"A research of band-pass filter with highly steep band-edge based on semi-lumped structure","authors":"Xin Wang, Yi Liu, Yong-sheng Dai","doi":"10.1109/IMWS-AMP.2016.7588437","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588437","url":null,"abstract":"To the practical demands of project, a set of solution on the highly steep band-edge band-pass filter based on LTCC technology was designed in this paper. Semi-lumped Structure is used in this design for operating convenience. With the help of advanced LTCC technology, miniaturization will eventually be realized. Cross coupling is used to add transmission zeros for better steep band-edge, but still cannot meet the needs of application in practice. So cascade two band-pass filter of identical structure by above and below become the best way to solve the difficulties. Simulation results are achieved with the help of circuit simulation and 3D simulation software. The center frequency is 1237.5MHz, its bandwidth is 575MHz, from 100MHz to 480MHz the stop-band attenuation is better than 40dB and it is better than 30dB from 1900MHz to 3050MHz. The size of product is only 4.5mm×3.2 mm×2.5 mm.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133974543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrothermal characterization of SOI FinFETs SOI finfet的电热特性
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588321
Peng Zhang, Wenchao Chen, Jun Hu, W. Yin
{"title":"Electrothermal characterization of SOI FinFETs","authors":"Peng Zhang, Wenchao Chen, Jun Hu, W. Yin","doi":"10.1109/IMWS-AMP.2016.7588321","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588321","url":null,"abstract":"Electrothermal characterization of the advanced SOI FinFETs is performed in this paper, which is based on some analytical equations as well as in-house developed finite difference algorithm. The temperature-dependent properties of thermal conductivities of all materials involved are considered in our simulation, with results validated by the commercial software ANSYS and other analytical solution. The self-heating effects (SHE) in such FinFET at 50nm node are further investigated, and some analytical equations are derived for fast predicting the maximum temperature in its channel. On the other hand, transient temperature response under the circuit-speed random stress is also studied, which is mimicked by the Pseudo Random Binary Sequence signal. It is found that the AC and PRBS signals introduce the similar transient temperature response, while the lower frequency signal induces the worse self-heating effect.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129360730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Statistical models for microwave GaN HEMTs 微波GaN hemt的统计模型
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588417
Yuehang Xu, Zhikai Chen, R. Xu
{"title":"Statistical models for microwave GaN HEMTs","authors":"Yuehang Xu, Zhikai Chen, R. Xu","doi":"10.1109/IMWS-AMP.2016.7588417","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588417","url":null,"abstract":"Statistical model of semiconductor field effect device is important for yield analysis. In this paper, the large signal statistical characterization of GaN HEMTs is modeled based on empirical equivalent circuit model. First, the parameters of small signal and large signal equivalent circuit model are extracted by in-house extraction program based on 10 batches GaN HEMTs. Then, the statistical model is fulfilled by combining principal component analysis, factor analysis, and multiple regressions modeling techniques. Finally, the statistical model is implemented in Agilent-ADS and validated by comparison between Monte Carlo simulation and measurement results. Furthermore, two S-band GaN HEMT power amplifiers are designed by using the established statistical model for demonstration purpose. The results show that good accuracy has been achieved between measurement results and Monte Carlo simulation results. The proposed method will be useful for GaN device yield optimization.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129074046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Aircraft THz wave ground detection atmospheric absorption attenuation calculation 飞机太赫兹波地面探测大气吸收衰减计算
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588342
Yahua Wang, Xiaofan Yang, Yonghu Zeng, Liandong Wang
{"title":"Aircraft THz wave ground detection atmospheric absorption attenuation calculation","authors":"Yahua Wang, Xiaofan Yang, Yonghu Zeng, Liandong Wang","doi":"10.1109/IMWS-AMP.2016.7588342","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588342","url":null,"abstract":"Terahertz (THz) wave is 0.1 to 10THz electromagnetic wave, which has the advantages of wide frequency band and low energy. In the field of space exploration, THz has important application prospects. Up to now, the atmospheric absorption attenuation model of THz wave is mostly horizontal transmission attenuation model. However, most aircraft ground detection is under slant path, not horizontal. Based on ITU THz wave atmospheric absorption attenuation model, this paper deduces the reasonable atmosphere attenuation calculation method of THz wave propagation under slant path, and completes quantitative calculation.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115836634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual-band asymmetric transmission and cross-polarization conversion of linearly polarized wave using multi-layered metamaterial 利用多层超材料实现线极化波的双波段不对称传输和交叉极化转换
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588357
Yajun Liu, Song Xia, Hongyu Shi, A. Zhang, Zhuo Xu
{"title":"Dual-band asymmetric transmission and cross-polarization conversion of linearly polarized wave using multi-layered metamaterial","authors":"Yajun Liu, Song Xia, Hongyu Shi, A. Zhang, Zhuo Xu","doi":"10.1109/IMWS-AMP.2016.7588357","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588357","url":null,"abstract":"In this paper, we propose a multi-layered metamaterial that consists of three metallic layers and two dielectric spacer layers to realize efficient dual-band asymmetric transmission for linearly polarized wave. The simulated results show that the metamaterial can achieve broadband and high efficiency cross-polarization conversion in two separated bands for y-polarized wave. The proposed metamaterial may has great potential as a polarization manipulation device in sensor applications, antennas and related applications.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130625661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on in-band electromagnetic interference effect of communication system 通信系统带内电磁干扰效应研究
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588452
L. Xinfeng, Hao Xiaojun, Wang Liandong, Zeng Yonghu, H. Hui
{"title":"Research on in-band electromagnetic interference effect of communication system","authors":"L. Xinfeng, Hao Xiaojun, Wang Liandong, Zeng Yonghu, H. Hui","doi":"10.1109/IMWS-AMP.2016.7588452","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588452","url":null,"abstract":"In order to analyze the electromagnetic compatibility of communication system, a test method based on symbol error rate (SER) is proposed, then the experimental system was built. The influence of in-band electromagnetic interference on communication system was studied, and the mechanism was got. The results indicate that for the same frequency interference, the SER increase slowly in the front 2 dBm range, the later 1 dBm, the SER increases rapidly until the SER gets 0.47, then the SER remain unchanged, the interference power is always proportionate to the transmit power. The quality of message is damaged when the SER gets 10-2 level, and the display screen crashes when the SER is 0.47. In the transmit frequency 2 MHz range, the communication system is easy to be disturbed.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127244889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A low profile and wide tunable absorber with varactor in S-band 具有s波段变容管的低轮廓宽可调谐吸收器
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588349
Peng Mei, Xianqi Lin, Xu Wang, Yankai Ma, Liqin Jiang, Jinghan Xiao
{"title":"A low profile and wide tunable absorber with varactor in S-band","authors":"Peng Mei, Xianqi Lin, Xu Wang, Yankai Ma, Liqin Jiang, Jinghan Xiao","doi":"10.1109/IMWS-AMP.2016.7588349","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588349","url":null,"abstract":"In the paper, a simple structure is designed to realize a relative wide tunable electromagnetic absorbing in the S-band. The structure consists of rectangle metal patch with slots, FR4-substrate and a varactor. By regulating the DC voltage, the capacitance value of the varactor can change from 1pF to 5pF, resulting the absorbing frequency varying from 3.37GHz to 2.48 GHz, the relative bandwidth can reach up to 30.42%. And at the same time, the absorption rate under these capacitance values of the varactor all can exceed 95%. What's more, the tunable absorber is low-profile with the dimension of unit cell 0.15λ* 0.15λ *0.008λ, where theλ is the free space wavelength at center frequency.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"31 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123695316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Rejection filters based on spoof surface plasmons and complementary metamaterial particles 基于欺骗表面等离子体和互补超材料粒子的抑制滤波器
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588424
Qian Zhang, T. Cui
{"title":"Rejection filters based on spoof surface plasmons and complementary metamaterial particles","authors":"Qian Zhang, T. Cui","doi":"10.1109/IMWS-AMP.2016.7588424","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588424","url":null,"abstract":"We propose a rejection filter using metamaterial particles to etch the metal part of spoof surface plasmons (SPPs) waveguide which is made up of double-side corrugated metallic strip. The combination of spoof SPP transmission and H-shape structure a kind of capacitive wire media can consist of the LC resonant circuit. It is affirmative to achieve signal suppressions at their resonant frequency. Adjusting groove depth can not only change the cut-off frequency but also change the rejection band of the filter. The simulation results demonstrate the excellent filtering performance of all the designed filters, and the proposed filters can play an important role in the integrated plasmonic devices and circuit at microwave and terahertz frequencies.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123696890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High-impedance differential antenna with high gain for graphene-based terahertz detector 用于石墨烯基太赫兹探测器的高增益高阻抗差分天线
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588362
Sanming Hu, A. Lombardo, Yizhu Shen, H. Meng, W. Dou
{"title":"High-impedance differential antenna with high gain for graphene-based terahertz detector","authors":"Sanming Hu, A. Lombardo, Yizhu Shen, H. Meng, W. Dou","doi":"10.1109/IMWS-AMP.2016.7588362","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588362","url":null,"abstract":"Graphene field-effect transistor (FET) has been successfully demonstrated for terahertz (THz) detection at room temperature. This graphene FET has a differential feeding structure and a high output impedance up to several thousand Ohms. These characteristics significantly challenge the antenna design, especially a high-performance antenna. To alleviate this issue, this paper presents a circularly bended dipole antenna on silicon substrate. The results show that, this novel antenna features a differential pair, a high impedance of 5000 Ohms, a high gain of 9.47 dBi, and also a narrow bandwidth of 3 GHz to filter out input noise. This antenna is a very good candidate for inherent integration, and will significantly improve the performance of the graphene-based THz detector.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128141239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信