A low profile and wide tunable absorber with varactor in S-band

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI:10.1109/IMWS-AMP.2016.7588349

Peng Mei, Xianqi Lin, Xu Wang, Yankai Ma, Liqin Jiang, Jinghan Xiao

引用次数: 2

Abstract

In the paper, a simple structure is designed to realize a relative wide tunable electromagnetic absorbing in the S-band. The structure consists of rectangle metal patch with slots, FR4-substrate and a varactor. By regulating the DC voltage, the capacitance value of the varactor can change from 1pF to 5pF, resulting the absorbing frequency varying from 3.37GHz to 2.48 GHz, the relative bandwidth can reach up to 30.42%. And at the same time, the absorption rate under these capacitance values of the varactor all can exceed 95%. What's more, the tunable absorber is low-profile with the dimension of unit cell 0.15λ* 0.15λ *0.008λ, where theλ is the free space wavelength at center frequency.

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具有s波段变容管的低轮廓宽可调谐吸收器

本文设计了一种简单的结构，实现了s波段相对宽的可调谐电磁吸收。该结构由带槽的矩形金属贴片、fr4衬底和变容管组成。通过调节直流电压，变容管的电容值可以在1pF到5pF之间变化，吸收频率在3.37GHz到2.48 GHz之间变化，相对带宽可达30.42%。同时，在这些电容值下，该变容管的吸收率均可超过95%。此外，该可调谐吸收器外形低调，尺寸为0.15λ* 0.15λ* 0.008λ，其中λ为中心频率处的自由空间波长。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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