High-impedance differential antenna with high gain for graphene-based terahertz detector

Sanming Hu, A. Lombardo, Yizhu Shen, H. Meng, W. Dou
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引用次数: 0

Abstract

Graphene field-effect transistor (FET) has been successfully demonstrated for terahertz (THz) detection at room temperature. This graphene FET has a differential feeding structure and a high output impedance up to several thousand Ohms. These characteristics significantly challenge the antenna design, especially a high-performance antenna. To alleviate this issue, this paper presents a circularly bended dipole antenna on silicon substrate. The results show that, this novel antenna features a differential pair, a high impedance of 5000 Ohms, a high gain of 9.47 dBi, and also a narrow bandwidth of 3 GHz to filter out input noise. This antenna is a very good candidate for inherent integration, and will significantly improve the performance of the graphene-based THz detector.
用于石墨烯基太赫兹探测器的高增益高阻抗差分天线
石墨烯场效应晶体管(FET)已经成功地在室温下用于太赫兹(THz)探测。这种石墨烯FET具有差分馈电结构和高达几千欧姆的高输出阻抗。这些特性对天线设计,尤其是高性能天线的设计提出了严峻的挑战。为了解决这一问题,本文提出了一种硅基圆弯曲偶极子天线。结果表明,该天线具有差分对、5000欧姆的高阻抗、9.47 dBi的高增益和3 GHz的窄带宽,可滤除输入噪声。该天线是固有集成的一个很好的候选天线,将显著提高石墨烯基太赫兹探测器的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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