Shiqi Ma;Louis Delait;Thibault Fiasse;Laurent A. Francis;Jean-Pierre Raskin;Dimitri Lederer
{"title":"A Porous Silicon Waveguide Platform for Sub-THz Passive Components and Dielectric Sensing","authors":"Shiqi Ma;Louis Delait;Thibault Fiasse;Laurent A. Francis;Jean-Pierre Raskin;Dimitri Lederer","doi":"10.1109/TMTT.2026.3731877","DOIUrl":"https://doi.org/10.1109/TMTT.2026.3731877","url":null,"abstract":"This article presents a porous silicon (PSi) waveguide platform for sub-terahertz (sub-THz) passive components and dielectric sensing, implemented on an ultralow-resistivity (ULR) silicon substrate. The proposed approach exploits the quasi-isotropic behavior of electrochemical anodization to form a U-shaped PSi waveguide cross section. An analytical electromagnetic model based on an equivalent rectangular waveguide representation is established to evaluate propagation characteristics and loss mechanisms. The model shows good agreement with full-wave simulations and experimental measurements. A process-aware design approach is developed to relate anodization parameters to both the dry-state effective permittivity and the geometry of the PSi waveguide. This enables the translation of target electromagnetic performance into corresponding fabrication parameters. To demonstrate the versatility of the platform, a set of PSi-based devices, including a waveguide, resonator, bandpass filter, and sensor, is designed, fabricated, and characterized for D-band (110–170 GHz) operation. The PSi waveguide exhibits an attenuation constant of 0.7 dB/mm at 140 GHz. The PSi bandpass filter operates at 144.8 GHz with a fractional bandwidth of 9.7% and an insertion loss (IL) of around 7.5 dB. The PSi resonator resonates at 140.6 GHz and features an unloaded quality factor of 34.4. The resonator is also used for model-based extraction of the dry-state effective permittivity of the PSi region. In addition, a proof-of-concept PSi waveguide sensor demonstrates a reversible resonance frequency shift of 11.62 GHz upon ethanol infiltration, corresponding to an extracted change of 0.47 in the effective permittivity of the sensing region. These results highlight the potential of the proposed platform for integrated dielectric sensing.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 10","pages":"8644-8658"},"PeriodicalIF":5.2,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149222606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A DPC-GJC Matrix Enabling Independent Reconfigurable 2-D Multibeam Scanning","authors":"Fanchao Zeng;Ming Li;Can Ding;Y. Jay Guo","doi":"10.1109/TMTT.2026.3729316","DOIUrl":"https://doi.org/10.1109/TMTT.2026.3729316","url":null,"abstract":"This article presents the first generalized joined coupler (GJC) matrix-based architecture capable of simultaneously generating multiple independently steerable beams in 2-D. Built upon a conventional single-layer GJC matrix, the proposed dual-phase-controlled (DPC) GJC matrix introduces two independently tunable phase-control sets to realize decoupled beam steering in the azimuth and elevation planes. Unlike existing matrix-based beamforming networks (BFNs) that rely on stacked multilayer structures for 2-D beam scanning, the proposed architecture achieves 2-D multibeam scanning within a single-layer topology, significantly reducing hardware complexity and implementation cost. An inverse coupler synthesis (ICS) method is developed to optimize the coupling coefficients of the matrix. Numerical results demonstrate that the proposed matrix can generate multiple independently steerable beams and can be flexibly mapped to different antenna array configurations without modifying the hardware structure. To validate the concept, a fully integrated <inline-formula> <tex-math>$4times 8$ </tex-math></inline-formula> prototype is implemented using a folded multilayer PCB incorporating phase shifters, gain-compensation amplifiers, and an FPGA-based control module. Experimental results demonstrate simultaneous multibeam generation with independent steering in both azimuth and elevation, with a maximum gain variation of 2.6 dB and sidelobe levels below −8 dB.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 10","pages":"9223-9236"},"PeriodicalIF":5.2,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149222619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 27.6-dBm Four-Stack X-Band CMOS Power Amplifier With Supply-Voltage-Scalable Multipower-Mode Operation","authors":"Hojong Lee;Hyunsoo Kim;Jaeyong Lee;Changkun Park","doi":"10.1109/TMTT.2026.3732175","DOIUrl":"https://doi.org/10.1109/TMTT.2026.3732175","url":null,"abstract":"This article presents an X-band CMOS power amplifier (PA) employing a four-stack topology with supply-voltage-scalable multipower-mode operation, targeting highly integrated beamforming systems that require both high output power and high efficiency across a wide output power range. In conventional CMOS PAs, the already-low supply voltage headroom severely limits the practical range of supply voltage scaling, making multipower-mode operation ineffective. The supply voltage scaling range is theoretically bounded by the per-transistor reliability constraint at the upper limit and the saturation condition at the lower limit, with both bounds scaling proportionally with the number of stacked transistors. Consequently, the proposed four-stack topology raises the allowable supply voltage to 4.0 V and provides a scaling range of approximately 3.48 V—significantly wider than that achievable with conventional two- or three-stack designs—enabling meaningful multipower-mode operation verified through node voltage simulations. By dynamically adjusting the supply voltage according to the required output power level, the proposed PA shifts the peak efficiency point without additional amplifier paths or switching networks, making it particularly suitable for compact beamforming channel integration. The PA is designed and fabricated in a 65-nm RF CMOS process. At 10 GHz, the PA achieves a P<sub>1dB</sub> of 27.3 dBm and a saturation output power (P<inline-formula> <tex-math>${}_{mathbf {SAT}}$ </tex-math></inline-formula>) of 27.6 dBm—the highest output power reported for CMOS X-band PAs to date. Furthermore, compared to the high-power mode, the proposed multipower-mode operation improves average PAE by 4.3%, 7.5%, and 6.6% at 2-, 6-, and 10-dB output back-off points, respectively. These results validate that the proposed architecture simultaneously achieves record output power and enhanced back-off efficiency within a compact core area of 0.218 mm<sup>2</sup>.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 10","pages":"8877-8887"},"PeriodicalIF":5.2,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149222425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Near-/Far-Field Dual-Mode Self-Injection-Locked Sensor for Versatile Noncontact Respiratory Monitoring Scenarios","authors":"Guanghao Fan;Han Wang;Meng Yang;Yongxin Guo","doi":"10.1109/TMTT.2026.3730913","DOIUrl":"https://doi.org/10.1109/TMTT.2026.3730913","url":null,"abstract":"This article proposes a novel near-field (NF)/far-field (FF) dual-mode self-injection-locked sensor (DMSILS) for noncontact respiratory monitoring across diverse application scenarios. The DMSILS architecture integrates four core functional blocks: a dedicated dual-injection-mode oscillator (DIMO), an RF reconfigurable front-end module (RFEM), a power detection module (PDM), and a sensing antenna. The DIMO achieves injection locking by leveraging either injection-port impedance variation or frequency pulling induced by the injected signal. The RFEM incorporates two single-pole-double-throw (SPDT) switches to enable mode switching. The PDM converts the frequency-modulated signal into a voltage-domain respiratory waveform. The dual-mode architecture offers high operational flexibility: the NF mode enables bypassing path interference and operating effectively in confined spaces, whereas the FF mode enables extended-range sensing. Comprehensive experiments in both modes validate the performance and practical potential of the proposed DMSILS.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 10","pages":"9196-9208"},"PeriodicalIF":5.2,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149222403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
David L. West;Brett L. Ringel;Walter Disharoon;John D. Cressler;Nima Ghalichechian
{"title":"Optically Excited, Low-Loss Vanadium Dioxide Switches for mmWave and Terahertz Applications","authors":"David L. West;Brett L. Ringel;Walter Disharoon;John D. Cressler;Nima Ghalichechian","doi":"10.1109/TMTT.2026.3725591","DOIUrl":"https://doi.org/10.1109/TMTT.2026.3725591","url":null,"abstract":"We report the design, simulation, fabrication, and measurement of optically excited vanadium dioxide (VO<sub>2</sub>) switches operating from DC to 330 GHz, which is the widest demonstrated bandwidth among phase-change material (PCM) devices. PCM switches typically rely on integrated microheaters to excite the phase transition, which contribute parasitic capacitance that degrades performance at millimeter wave (mmWave) bands. We propose optical excitation as an alternative to microheaters, fully decoupling the PCM control from the RF signal and significantly enhancing the achievable bandwidth. In this work, a VO<sub>2</sub>-based single-pole, single-throw switch on sapphire is excited via topside optical injection using a 785-nm laser. The switches exhibit a competitive <inline-formula> <tex-math>$R_{mathrm {ON}}C_{mathrm {OFF}}$ </tex-math></inline-formula> figure-of-merit of 10.9 fs, with wider demonstrated bandwidth, lower insertion loss (IL), and faster transition times compared to microheater-based PCM switches. The switch was measured across four bands spanning DC–330 GHz, with an average IL of 0.8 dB, >13.7 dB isolation (IX), and >15 dB return loss (RL) at room temperature. Furthermore, we demonstrate a turn-on time of 248 ns (10%–90%) and turn-off time of 283 ns (90%–10%). The maximum power handling at 2 GHz is 30 dBm in the <sc>on</small> state and 39 dBm in the <sc>off</small> state. The <sc>on</small> state input third-order intercept point (iIP<sub>3</sub>) is 37 dBm at 2 GHz, and <sc>off</small> state reflected iIP<sub>3</sub> is >68 dBm up to <inline-formula> <tex-math>$50~^{circ }$ </tex-math></inline-formula>C. The minimum optical power to excite the phase transition is 37 mW, corresponding to a power density of 7.9 kW/cm<sup>2</sup> at the center of the beam.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 10","pages":"9018-9030"},"PeriodicalIF":5.2,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149222413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"ITO-PET-Based Optically Transparent Wideband Metasurface Absorber for Radar and Shielding Applications","authors":"Anshuman Choudhary;M. Jaleel Akhtar","doi":"10.1109/TMTT.2026.3723889","DOIUrl":"https://doi.org/10.1109/TMTT.2026.3723889","url":null,"abstract":"A wideband, optically transparent, metasurface absorber structure for radar and electromagnetic interference (EMI) shielding applications is presented. In the first step, an optically transparent metasurface layer with specially designed unit cells of indium tin oxide (ITO) having a sheet resistance of <inline-formula> <tex-math>$210.7~Omega $ </tex-math></inline-formula>/sq is selectively patterned on a polyethylene terephthalate (PET) sheet. In the second step, a flexible transparent polydimethylsiloxane (PDMS) layer is fabricated using a solution casting technique, and its dielectric properties are measured. Finally, the proposed transparent metasurface absorber (TMA) is realized by sandwiching the PDMS layer between the ITO-PET-based metasurface structure on the top and another ITO-PET uniform sheet of low-resistance <inline-formula> <tex-math>$12.4~Omega $ </tex-math></inline-formula>/sq at the bottom. The TMA absorber is simulated in CST Microwave Studio. The simulated TMA exhibits a wide 10-dB absorption bandwidth (ABW) of 14.1 GHz (9.7–23.8 GHz) for a 2.5-mm-thick sample. The scattering parameters of the fabricated TMA screen are measured in an anechoic chamber using two horn antennas and associated measurement setups, in the frequency range of 8–24 GHz. The fabricated TMA demonstrates a wide ABW of 13.93 GHz (9.84–23.77 GHz), which matches quite well with the corresponding simulated data. Additionally, the EMI shielding effectiveness of ITO-PET with <inline-formula> <tex-math>$12.4~Omega $ </tex-math></inline-formula>/sq sheet resistance is measured and found to be 25–32 dB in the X-band, which substantiates its potential use in EMI shielding applications. The proposed TMA demonstrates an optical transparency of 71.1%, making it a promising candidate for stealth, radar, and EMI shielding applications across the X, Ku, and K bands.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 10","pages":"8589-8598"},"PeriodicalIF":5.2,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149222470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Correction to \"The Companion of Enrico's Chart for Phase Noise and Two-Sample Variances\"","authors":"Enrico Rubiola;François Vernotte","doi":"10.1109/TMTT.2026.3725821","DOIUrl":"https://doi.org/10.1109/TMTT.2026.3725821","url":null,"abstract":"In the above article, <italic>The Companion of Enrico’s Chart for Phase Noise and Two-Sample Variances (IEEE Transact. MTT vol. 71 no. 7 pp. 2996-3025, July 2023, DOI: 10.1109/TMTT.2023.3238267)</i>. In addition, we discuss the subsequent changes in the definition of the Hadamard variance after it was introduced, which give rise to a subtle error. The corrections to the Enrico’s Chart are already done, and the corrected version is available on Zenodo, DOI: 10.5281/zenodo.4399218. This DOI will always resolve to the latest version of the Enrico’s Chart.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 10","pages":"9311-9313"},"PeriodicalIF":5.2,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11743319","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149222510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Comments on \"Floating Node Resonance: A New Eigenmode in Series-Connected Spiral Inductors With Closed-Form Modal Scaling Laws\"","authors":"José Brandão Faria","doi":"10.1109/TMTT.2026.3724780","DOIUrl":"https://doi.org/10.1109/TMTT.2026.3724780","url":null,"abstract":"The above article is related to X-band MMIC switches in which a series-connection of spiral inductors serves as a shunt path for electrostatic discharge (ESD) protection. While the study of the resonant behavior of this inductor structure is important, a closer examination reveals certain inaccuracies in the theoretical analysis developed in Section II. These comments aim to clarify these inaccuracies and provide a correct mathematical formulation.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 10","pages":"9308-9310"},"PeriodicalIF":5.2,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149222511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Microwave Subsurface Imaging of Arbitrary-Shaped Objects Using Polarization Converter-Based Metasurface Radiating Structure","authors":"Soumya Chakravarty;Anwesha Khasnobish;M. Jaleel Akhtar","doi":"10.1109/TMTT.2026.3729711","DOIUrl":"https://doi.org/10.1109/TMTT.2026.3729711","url":null,"abstract":"Monostatic near-field microwave imaging (MWI) with a single linearly polarized probe suffers from orientation-dependent blind spots, as the backscattered signal nearly vanishes when the target axis is orthogonal to the incident polarization. Conventional polarization diversity methods involve multiport antennas or switching networks, which complicate compact probe designs. This article presents a single-port planar dipole integrated in direct contact with a <inline-formula> <tex-math>$5 times 5$ </tex-math></inline-formula> reflective polarization converter metasurface (PCM) on FR4 that achieves dual-band operation with passive, frequency-dependent polarization rotation. A three-resonator coupled mode analysis predicts the observed eigenfrequency redistribution from three uncoupled modes (2.18, 2.58, 2.97 GHz) to three coupled resonances (2.37, 2.56, and 2.94 GHz). The integrated structure covers 2.21–2.69 and 2.84–3.03 GHz with measured peak gains of 7.06 and 8.26 dBi (up to 6.4-dB enhancement). Notably, the polarization tilt angle rotates by more than 90° across the band, enabling near-orthogonal states through passive frequency selection. Imaging of metallic targets buried under 10–30 mm of sand validates the design, where dual polarization image fusion yields lower Dice loss (DL) values of 0.14 (simulated) and 0.07 (measured), compared with 0.27 and 0.25, respectively, for the standalone dipole, confirming substantially improved anomaly localization accuracy. This work shifts polarization diversity from multiport hardware to antenna–metasurface (MS) interaction, establishing a compact single-port imaging paradigm.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 10","pages":"8599-8618"},"PeriodicalIF":5.2,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149222556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shilong Chen;Guangyin Shi;Zhiwei Dai;Zhongmao Li;Lu Liu;Yu Gao;Zhipeng Ren;Huan Wang;Zhiqiang Li
{"title":"An 11.1--27.5-GHz SiGe LNA With 1.62-dB Noise Figure and 32.2-dB Gain Using Noise Matching and Gain Flatness Optimization Techniques","authors":"Shilong Chen;Guangyin Shi;Zhiwei Dai;Zhongmao Li;Lu Liu;Yu Gao;Zhipeng Ren;Huan Wang;Zhiqiang Li","doi":"10.1109/TMTT.2026.3725268","DOIUrl":"https://doi.org/10.1109/TMTT.2026.3725268","url":null,"abstract":"Achieving wideband simultaneous noise and input matching (SNIM) is critical for low-noise amplifiers (LNAs). However, the intrinsic noise regulation mechanism of transformer feedback remains unrevealed in existing studies, which mostly focus on bandwidth extension. This article systematically reveals this mechanism, demonstrating that, compared with conventional inductor feedback, transformer feedback reduces the equivalent noise resistance (<inline-formula> <tex-math>$R_{mathrm {n}}$ </tex-math></inline-formula>) and flattens the optimal noise impedance (<inline-formula> <tex-math>$Z_{mathrm {opt}}$ </tex-math></inline-formula>) without degrading the minimum noise figure (NF) (<inline-formula> <tex-math>$NF_{min }$ </tex-math></inline-formula>), establishing a theoretical basis for wideband SNIM. Based on this, an 11.1–27.5-GHz three-stage LNA is implemented in a 0.18-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m SiGe process. A transformer-feedback network in the cascode input stage achieves wideband SNIM, while high-coupling interstage transformers extend bandwidth but introduce a midband gain dip and high-frequency gain roll-off. To compensate, an improved current-reuse topology with parallel L-R pole allocation is proposed to flatten the gain response. Measured results show that the proposed LNA achieves a peak gain of 32.2 dB over a 3-dB bandwidth of 11.1–27.5 GHz and a minimum NF of 1.62 dB. It consumes 11 mW from a 1.5 V supply.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"74 10","pages":"8847-8860"},"PeriodicalIF":5.2,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149222569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}