IEEE Transactions on Microwave Theory and Techniques最新文献_第4页

IEEE Transactions on Microwave Theory and Techniques Publication Information IEEE微波理论与技术汇刊

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-12-05 DOI: 10.1109/TMTT.2024.3500998

引用次数: 0

IEEE Transactions on Microwave Theory and Techniques Information for Authors IEEE微波理论与技术汇刊

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-12-05 DOI: 10.1109/TMTT.2024.3500996

引用次数: 0

A Dual-Band Butler Matrix-Based Millimeter-Wave Dual-Band Multibeam Antenna Array Using a Simple Dual-Mode Transmission Line Scheme

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-12-04 DOI: 10.1109/TMTT.2024.3504536

Shuhao Shen;Kang Zhou;Yunlong Lu;Ke Wu

{"title":"A Dual-Band Butler Matrix-Based Millimeter-Wave Dual-Band Multibeam Antenna Array Using a Simple Dual-Mode Transmission Line Scheme","authors":"Shuhao Shen;Kang Zhou;Yunlong Lu;Ke Wu","doi":"10.1109/TMTT.2024.3504536","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3504536","url":null,"abstract":"This article reports a millimeter-wave (mmW) dual-band multibeam antenna array (MAA) based on a dual-band Butler matrix (BM) utilizing a novel dual-mode transmission line (DMTL) structure. This kind of DMTL scheme enables the realization of distinct operating modes at different frequency bands, facilitating the design of a dual-band device through an initial determination of the frequency ratio (FR) followed by topological and structural adjustments. Compared to conventional dual-band design techniques, this scheme significantly simplifies the design process while enhancing the efficiency. Based on this scheme and the proposed DMTL structure, a dual-band BM is designed and implemented with several dual-band couplers, crossovers, and shifters as a proof of concept. The structure incorporates nested sets of BMs operating at two distinct bands, providing antenna excitations with a uniform amplitude and progressive phase. Moreover, four wideband dual-polarized antennas are designed to constitute an MAA to verify its dual-band performance. A prototype operating at 24 and 30 GHz with FR =1.25 is designed, fabricated, and evaluated. The measured results show that excellent reflection coefficients (−19.2 dB) and port isolations (15.1 dB) are achieved, ensuring a stable dual-band multibeam performance. Additionally, four beam angles of [<inline-formula> <tex-math>$14^{circ },- 45^{circ }$ </tex-math></inline-formula>, <inline-formula> <tex-math>$46^{circ },- 12^{circ }$ </tex-math></inline-formula>]/[<inline-formula> <tex-math>$12^{circ },- 35^{circ }$ </tex-math></inline-formula>, <inline-formula> <tex-math>$35^{circ },- 11^{circ }$ </tex-math></inline-formula>] and cross-polarization discrimination (XPD) of 12.8 dB are realized across the required bands.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2170-2182"},"PeriodicalIF":4.1,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143809005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single-Pole Single-Throw RF Acoustic Phase Inversion Switch Leveraging Poled Ferroelectrics 利用极化铁电体的单极单掷射频声学相位反转开关

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-11-28 DOI: 10.1109/TMTT.2024.3496665

Hersh Desai;Wenhao Peng;Amir Mortazawi

{"title":"Single-Pole Single-Throw RF Acoustic Phase Inversion Switch Leveraging Poled Ferroelectrics","authors":"Hersh Desai;Wenhao Peng;Amir Mortazawi","doi":"10.1109/TMTT.2024.3496665","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3496665","url":null,"abstract":"This article marks the first demonstration of an integrated single-pole single-throw (SPST) radio frequency (RF) switch using ferroelectric thin films in acoustic wave devices. Polarization control via electric field application allows for selective acoustic phase inversion (API) to cause signal reflection via destructive interference. A specialized implementation of the modified Butterworth-Van Dyke (mBVD) model is presented to describe the\u0000<sc>on\u0000 and\u0000<sc>off\u0000 states of the switch. The equivalent circuit can accurately predict ferroelectric stacked crystal filter (SCF) S-parameters under various poling configurations and is also valid for the design of API RF switches. An integrated proof-of-principle device is presented using paraelectric barium strontium titanate, Ba0.5Sr0.5TiO3 (BST), SCFs. The switch has SCF-type response in the\u0000<sc>on\u0000 state with insertion loss (IL) of under 1.8 dB and a notched\u0000<sc>off\u0000 state response with an isolation of over 37 dB. The first thickness extensional mode occurs at 1.6 GHz, and the total area is \u0000<inline-formula> <tex-math>$100times 200~mu $ </tex-math></inline-formula>\u0000m, including decoupling capacitor (\u0000<inline-formula> <tex-math>$100times 100~mu $ </tex-math></inline-formula>\u0000m) and electrical connections. Moreover, total active area consumes less than \u0000<inline-formula> <tex-math>$26times 52~mu $ </tex-math></inline-formula>\u0000m, suggesting future miniaturization. With the increasing inclusion of ferroelectric materials, such as BST and scandium-doped aluminum nitride (ScAlN) in the next-generation acoustic wave devices, this novel switch provides an avenue to eliminate interconnects between RF switches and microwave acoustic filters in RF front ends.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"6-13"},"PeriodicalIF":4.1,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multimaterial 3-D-Printed FSSs for Ultrawide and Dual Passbands in the K-Ka Spectra K-Ka光谱中超宽和双通道的多材料3d打印fss

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-11-25 DOI: 10.1109/TMTT.2024.3497996

Xiaojing Lv;Yang Yang;Zhen Luo;J. Scott Tyo

{"title":"Multimaterial 3-D-Printed FSSs for Ultrawide and Dual Passbands in the K-Ka Spectra","authors":"Xiaojing Lv;Yang Yang;Zhen Luo;J. Scott Tyo","doi":"10.1109/TMTT.2024.3497996","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3497996","url":null,"abstract":"This article presents two 3-D bandpass frequency-selective surfaces (FSSs) featuring ultrawide and dual operating frequency spectra, respectively. Leveraging advanced multimaterial additive manufacturing, the design potential of 3-D meta-atoms can be unlocked. Compared to conventional 2.5-D or quasi-3-D FSSs that incorporate vias or microstrip lines, the proposed centrally loaded geometries facilitate in-depth topological optimization. The assembly of diverse fundamental FSS shapes introduces multiple poles and zeros, contributing to broad in-band transmission, extensive out-of-band rejections, and sharp transitions while still attaining simplicity when using equivalent circuit-transmission line modeling and associated qualitative design aids. The application-oriented FSSs are properly configured to fit the K-Ka spectra, where the ultrawideband FSS covers a fractional bandwidth of approximately 2:1, and the dual-band FSS offers two near-equal absolute bandwidths of 8 GHz. Both designs are inherently polarization insensitive due to unit-cell symmetry, and their robustness against oblique incidences has also been experimentally verified for both TE and TM modes.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"75-86"},"PeriodicalIF":4.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10766902","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 2-to-67 GHz Balun Based on the SISL Platform

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-11-22 DOI: 10.1109/TMTT.2024.3498066

Yunye Bi;Yongqiang Wang;Kaixue Ma

{"title":"A 2-to-67 GHz Balun Based on the SISL Platform","authors":"Yunye Bi;Yongqiang Wang;Kaixue Ma","doi":"10.1109/TMTT.2024.3498066","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3498066","url":null,"abstract":"This article proposes an ultra-wideband (UWB) balun based on the substrate-integrated suspended line (SISL) platform. The proposed balun consists of a 180° phase shifter and a power divider. The phase shifter based on an inverter is composed of a transition structure from the suspended microstrip line (SML) to a substrate-integrated suspended parallel strip line (SISPSL). A shielding enclosure composed of multilayer metamaterials is adopted to eliminate the cavity resonance caused by the phase shifter. The power divider could be combined with the SISPSL phase shifter to form an UWB balun based on the SISL platform. To achieve wider bandwidth and better performance of the SISL balun, a pair of transition structures from SISL to SML are designed and inserted into the balun. As a demonstration, an UWB balun is fabricated by the printed circuit board (PCB) process and measured. From 2 to 67 GHz, that is, a 188.4<sc>1% fractional bandwidth, the measured return loss is better than 11 dB. The output phase imbalance is within ±5° from 2 to 67 GHz. The proposed SISL balun has the advantage of low loss and is well packaged, making it suitable for applications in UWB communication systems.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2195-2205"},"PeriodicalIF":4.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143809008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Signal-Flow-Based Analysis and Design of Pseudo-Doherty Load-Modulated Balanced Amplifier Toward Unlimited RF Bandwidth 面向无限射频带宽的伪doherty负载调制平衡放大器的信号流分析与设计

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-11-21 DOI: 10.1109/TMTT.2024.3497894

Pingzhu Gong;Jiachen Guo;Niteesh Bharadwaj Vangipurapu;Kenle Chen

{"title":"Signal-Flow-Based Analysis and Design of Pseudo-Doherty Load-Modulated Balanced Amplifier Toward Unlimited RF Bandwidth","authors":"Pingzhu Gong;Jiachen Guo;Niteesh Bharadwaj Vangipurapu;Kenle Chen","doi":"10.1109/TMTT.2024.3497894","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3497894","url":null,"abstract":"This article reports a first-ever decade-bandwidth pseudo-Doherty load-modulated balanced amplifier (PD-LMBA), designed for emerging 4G/5G communications and multiband operations. By revisiting the load-modulated balanced amplifier (LMBA) theory using an S-matrix-based signal-flow approach, a generalized theory for wideband LMBA operation is developed, taking into account the frequency-dependent nature of all components. In addition, by analyzing the signal-flow behavior of LMBA, a frequency-agnostic phase-alignment condition is identified as critical for ensuring intrinsic broadband load modulation. This unique design methodology enables, for the first time, the independent optimization of broadband balanced amplifier (BA, as the peaking) and control amplifier (CA, as the carrier), thus fundamentally addressing the longstanding limits imposed on the design of wideband load-modulated power amplifiers (PAs). To prove the proposed concept, an ultrawideband RF-input PD-LMBA is designed and developed using GaN technology covering the frequency range from 0.2 to 2 GHz. Experimental results demonstrate an efficiency of 51%–72% for peak output power and 44%–62% for 10-dB output power back-off (OBO), respectively.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"206-220"},"PeriodicalIF":4.1,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 1.9–18-GHz Filter Bank With Improved Passband Flatness Based on Asymmetrical Low-Loss SP7T Switch

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-11-20 DOI: 10.1109/TMTT.2024.3495822

Boyuan Zhu;Xu Zhu;Xiang Li;Pei-Ling Chi;Tao Yang

{"title":"A 1.9–18-GHz Filter Bank With Improved Passband Flatness Based on Asymmetrical Low-Loss SP7T Switch","authors":"Boyuan Zhu;Xu Zhu;Xiang Li;Pei-Ling Chi;Tao Yang","doi":"10.1109/TMTT.2024.3495822","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3495822","url":null,"abstract":"A novel on-chip single-pole seven-throw (SP7T) switch with asymmetrical paths is proposed in this article. By grouping the seven channels of the SP7T switch into different groups with appropriate matching networks, low insertion loss (IL) can be obtained. On the other hand, in order to achieve better flatness for the passband of the bandpass filter (BPF), a flatness compensation structure (FCS) consisting of series inductance, capacitance, and resistance is proposed. By adjusting the resonant frequency and unloaded Q of the FCS, the transmission peak of the BPF at the center frequency is effectively suppressed, resulting in a flat filter passband. To demonstrate the proposed SP7T switch and FCS, an SP7T switch covering dc-to-18 GHz, a single BPF covering 7.9–13.8 GHz, and a seven-channel switching filter bank (7CSFB) are implemented and fabricated for measurement, using 0.15-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m GaAs pHEMT process. The SP7T switch achieves a satisfactory IL of less than 1.44 dB and only 1.30 dB at 18 GHz, and the measured IP1dB is greater than 26.5 dBm. The measured results of the single BPF indicate that the addition of FCS optimizes the flatness to ±0.5 dB at the expense of some loss; the measured results of 7CSFB show that the passband IL is lower than 8.6 dB with a favorable flatness better than ±1 dB, the return loss (RL) is better than -10 dB, while the out-of-band rejection is up to 40 dB.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 3","pages":"1345-1355"},"PeriodicalIF":4.1,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143564025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wideband 3-D Microwave Absorber With 75° Angular Stability Using Hybrid Synthesizable Element Arrangement

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-11-20 DOI: 10.1109/TMTT.2024.3496785

Tian-Xi Feng;Yi-Wen Gao;Ning Liu;Hui Li;Lei Zhu

{"title":"Wideband 3-D Microwave Absorber With 75° Angular Stability Using Hybrid Synthesizable Element Arrangement","authors":"Tian-Xi Feng;Yi-Wen Gao;Ning Liu;Hui Li;Lei Zhu","doi":"10.1109/TMTT.2024.3496785","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3496785","url":null,"abstract":"In this article, a wideband 3-D microwave absorber with 75° angular stability is proposed using a hybrid synthesizable element arrangement. First, the operating principle of the synthesizable absorber element is investigated, where the filtering energy conversion function is synthesized and designed based on the established universal equivalent transmission line (TL) model. After applying different synthesized angles (SAs), the key finding is that absorption ratios (ARs) under large and small SAs can be compensated by each other, which is able to realize the stable and efficient absorption in a larger angular range. Combining two 45° SAs (for small incident angles) and one 60° SA (for large incident angles) in one absorber element, the angular stability is significantly improved to 75° by adopting the hybrid element (HE) arrangement. Moreover, a profile-reduced absorber design is further accomplished by employing the folded structure. Finally, a prototype is structurally designed and practically implemented. Measurements agree well with synthesized and simulated results, which successfully proves our presented design concept in this article. Under specific incident angles of 0°, 45°, 60°, and 75°, the measured average ARs in the desired 122% bandwidth (from 3.9 to 16.1 GHz) are 77.3%, 91.4%, 90.2%, and 82.4%, respectively. Furthermore, the proposed absorber possesses a manufacture-friendly structure with only one piece of resistive layer. Therefore, such analysis method and structural design of microwave absorbers are promisingly believed as potential candidates for wideband and wide-angle absorption coverage.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2113-2122"},"PeriodicalIF":4.1,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Low-Power, High-Resolution Successive Approximation RF Reflectometer

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-11-19 DOI: 10.1109/TMTT.2024.3495832

Ting-Li Hsu;Valentyn Solomko;Amelie Hagelauer

{"title":"A Low-Power, High-Resolution Successive Approximation RF Reflectometer","authors":"Ting-Li Hsu;Valentyn Solomko;Amelie Hagelauer","doi":"10.1109/TMTT.2024.3495832","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3495832","url":null,"abstract":"This article presents a monolithically integrated radio frequency (RF) scalar reflectometer based on a successive approximation register (SAR) approach with boosted measurement resolution. The limiting factors of the SAR-based architecture are investigated and the corresponding solutions are brought up accordingly for the improvement. The directional coupler used in the reflectometer adopts a reconfigurable design with which the directivity can be optimized for various frequency bands by loading the tuning ports with impedance tuning network. The device directly converts the return loss of the load (<inline-formula> <tex-math>$mathbf {lvert {Gamma }_{L} rvert }$ </tex-math></inline-formula>) into a digital output code by controlling the attenuator with the SAR codes. By modulating the attenuator with a <inline-formula> <tex-math>$Sigma Delta $ </tex-math></inline-formula>-modulator (<inline-formula> <tex-math>$Sigma Delta $ </tex-math></inline-formula>M), the step size of the attenuation can be reduced to as low as 0.25 dB, reducing the quantization error and boosting the resolution of the SAR-based reflectometer. The device is designed and implemented in a 90-nm RF SOI CMOS switch technology, occupying a core area of <inline-formula> <tex-math>$700times 1000~{mu}{mathrm {m}}$ </tex-math></inline-formula>. The implemented reflectometer demonstrates a measurement error of 0.061 in terms of <inline-formula> <tex-math>$mathbf {lvert {Gamma }_{L} rvert }$ </tex-math></inline-formula> for VSWR ranging from 1.4 and 20 while consuming a supply current of <inline-formula> <tex-math>$86~{mu }text {A}$ </tex-math></inline-formula> in conversion mode and <inline-formula> <tex-math>$12.4~{mu }text {A}$ </tex-math></inline-formula> in idle mode from a dc supply of 1.8 V.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2023-2035"},"PeriodicalIF":4.1,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10758301","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0