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Convergence of the Hybrid Implicit-Explicit Single-Field FDTD Method Based on the Wave Equation of Electric Field 基于电场波动方程的隐显混合单场时域有限差分法的收敛性
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ess0001
K. Fujita
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引用次数: 0
A Low-Power High-Speed Sensing Scheme for Single-Ended SRAM 一种单端SRAM低功耗高速传感方案
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2022ecp5008
Dashan Shi, Heng You, J. Yuan, Yulian Wang, Shushan Qiao
{"title":"A Low-Power High-Speed Sensing Scheme for Single-Ended SRAM","authors":"Dashan Shi, Heng You, J. Yuan, Yulian Wang, Shushan Qiao","doi":"10.1587/transele.2022ecp5008","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5008","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"63 1","pages":"712-719"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85005351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation and Extraction of Equivalent Circuit Parameters for GSG-Type Bonding Wires Using Electromagnetic Simulator 基于电磁模拟器的gsg型焊线等效电路参数评估与提取
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ess0002
T. Hirano
{"title":"Evaluation and Extraction of Equivalent Circuit Parameters for GSG-Type Bonding Wires Using Electromagnetic Simulator","authors":"T. Hirano","doi":"10.1587/transele.2021ess0002","DOIUrl":"https://doi.org/10.1587/transele.2021ess0002","url":null,"abstract":"SUMMARY In this paper, the author performed an electromagnetic field simulation of a typical bonding wire structure that connects a chip and a package, and evaluated the signal transmission characteristics (S- parameters). In addition, the inductance per unit length was extracted by comparing with the equivalent circuit of the distributed constant line. It turns out that the distributed constant line model is not su ffi cient because there are frequencies where chip-package resonance occurs. Below the res- onance frequency, the conventional low-frequency approximation model was e ff ective, and it was found that the inductance was about 1nH / mm.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"5 1","pages":"692-695"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85430957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interpretation Method of Inversion Phenomena on Backward Transient Scattered Field Components by a Coated Metal Cylinder 涂覆金属圆柱后向瞬态散射场分量反演现象的解释方法
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ecp5051
T. Kawano, K. Goto
{"title":"Interpretation Method of Inversion Phenomena on Backward Transient Scattered Field Components by a Coated Metal Cylinder","authors":"T. Kawano, K. Goto","doi":"10.1587/transele.2021ecp5051","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5051","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"13 1","pages":"389-397"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85450596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact and High-Resolution CMOS Switch-Type Phase Shifter Achieving 0.4-dB RMS Gain Error for 5G n260 Band 5G n260频段实现0.4 db RMS增益误差的紧凑高分辨率CMOS开关型移相器
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ecp5002
Jian Pang, Xueting Luo, Zheng Li, A. Shirane, K. Okada
{"title":"A Compact and High-Resolution CMOS Switch-Type Phase Shifter Achieving 0.4-dB RMS Gain Error for 5G n260 Band","authors":"Jian Pang, Xueting Luo, Zheng Li, A. Shirane, K. Okada","doi":"10.1587/transele.2021ecp5002","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5002","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"11 1","pages":"102-109"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81325612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes InGaAs/InAlAs三势垒共振隧道二极管高达67 GHz的导纳光谱
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021fus0006
K. Aikawa, M. Suhara, Takumi Kimura, Junki Wakayama, Takeshi Makino, Katsuhiro Usui, K. Asakawa, K. Akahane, I. Watanabe
{"title":"Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes","authors":"K. Aikawa, M. Suhara, Takumi Kimura, Junki Wakayama, Takeshi Makino, Katsuhiro Usui, K. Asakawa, K. Akahane, I. Watanabe","doi":"10.1587/transele.2021fus0006","DOIUrl":"https://doi.org/10.1587/transele.2021fus0006","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"59 1","pages":"622-626"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89944641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Experimental Verification of a 2.1nW 0.018mm2 Slope ADC-Based Supply Voltage Monitor for Biofuel-Cell-Powered Supply-Sensing Systems in 180-nm CMOS 基于斜率adc的生物燃料电池供电传感系统2.1nW 0.018mm2电源电压监测器的设计与实验验证
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021cts0001
Guowei Chen, Xujiaming Chen, K. Niitsu
{"title":"Design and Experimental Verification of a 2.1nW 0.018mm2 Slope ADC-Based Supply Voltage Monitor for Biofuel-Cell-Powered Supply-Sensing Systems in 180-nm CMOS","authors":"Guowei Chen, Xujiaming Chen, K. Niitsu","doi":"10.1587/transele.2021cts0001","DOIUrl":"https://doi.org/10.1587/transele.2021cts0001","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"91 1","pages":"565-570"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85836513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
32-Bit ALU with Clockless Gates for RSFQ Bit-Parallel Processor 用于RSFQ位并行处理器的32位无时钟门ALU
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021sep0005
T. Kawaguchi, N. Takagi
{"title":"32-Bit ALU with Clockless Gates for RSFQ Bit-Parallel Processor","authors":"T. Kawaguchi, N. Takagi","doi":"10.1587/transele.2021sep0005","DOIUrl":"https://doi.org/10.1587/transele.2021sep0005","url":null,"abstract":"SUMMARY A 32-bit arithmetic logic unit (ALU) is designed for a rapid single flux quantum (RSFQ) bit-parallel processor. In the ALU, clocked gates are partially replaced by clockless gates. This reduces the number of D flip flops (DFFs) required for path balancing. The number of clocked gates, including DFFs, is reduced by approximately 40 %, and size of the clock distribution network is reduced. The number of pipeline stages becomes modest. The layout design of the ALU and simulation results show the e ff ectiveness of using clockless gates in wide datapath circuits.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"25 1","pages":"245-250"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88548522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications 微波应用在3C-SiC/低电阻率Si衬底上的AlGaN/GaN HEMT
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2022mmi0009
A. Wakejima, A. Bose, Debaleen Biswas, S. Hishiki, Sumito Ouchi, K. Kitahara, K. Kawamura
{"title":"AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications","authors":"A. Wakejima, A. Bose, Debaleen Biswas, S. Hishiki, Sumito Ouchi, K. Kitahara, K. Kawamura","doi":"10.1587/transele.2022mmi0009","DOIUrl":"https://doi.org/10.1587/transele.2022mmi0009","url":null,"abstract":"SUMMARY A detailed investigation of DC and RF performance of AlGaN / GaN HEMT on 3C-SiC / low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC inter- mediate layer. The reported HEMT exhibited very low RF loss and ther-mally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the e ff ectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"16 1","pages":"457-465"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77143350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
F-band Frequency Multipliers with Fundamental and Harmonic Rejection for Improved Conversion Gain and Output Power 具有基频和谐波抑制的f波段倍频器，用于提高转换增益和输出功率
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ecp5036
Ibrahim Abdo, K. K. Tokgoz, A. Shirane, K. Okada
{"title":"F-band Frequency Multipliers with Fundamental and Harmonic Rejection for Improved Conversion Gain and Output Power","authors":"Ibrahim Abdo, K. K. Tokgoz, A. Shirane, K. Okada","doi":"10.1587/transele.2021ecp5036","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5036","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"29 1","pages":"118-125"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91532261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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