IEICE Trans. Electron.最新文献_第9页

On the Asymptotic Evaluation of the Physical Optics Approximation for Plane Wave Scattering by Circular Conducting Cylinders 圆导圆柱平面波散射物理光学近似的渐近评定

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021rep0001

N. Ta, H. Shirai

引用次数: 0

X-Band GaN Chipsets for Cost-Effective 20W T/R Modules 用于低成本20W T/R模块的x波段GaN芯片组

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ecp5024

J. Kamioka, Yoshifumi Kawamura, Ryota Komaru, M. Hangai, Y. Kamo, Tetsuo Kodera, S. Shinjo

{"title":"X-Band GaN Chipsets for Cost-Effective 20W T/R Modules","authors":"J. Kamioka, Yoshifumi Kawamura, Ryota Komaru, M. Hangai, Y. Kamo, Tetsuo Kodera, S. Shinjo","doi":"10.1587/transele.2021ecp5024","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5024","url":null,"abstract":"SUMMARY This paper reports on X-band Gallium Nitride (GaN) chipsets for cost-e ﬀ ective 20W transmit-receive (T / R) modules. The chipset components include a GaN-on-Si monolithic microwave integrated circuit (MMIC) driver ampliﬁer (DA), a GaN-on-SiC high power ampli-ﬁer (HPA) with GaAs matching circuits, a high-gain GaN-on-Si HPA with a GaAs output matching circuit, and a GaN-on-Si MMIC switch (SW). By utilizing either combination of the DA or single high-gain HPA, the conﬁgurations of two T / R module types can be realized. The GaN-on-Si MMIC DA demonstrates an output power of 6.4–7.4W, an associate gain of 22.3–24.6dB and a power added e ﬃ ciency (PAE) of 32–36% over 9.0– 11.0GHz. A GaN-on-SiC HPA with GaAs matching circuits exhibited an output power of 20–28W, associate gain of 7.8–10.7dB, and a PAE of 40– 56% over 9.0–11.0GHz. The high-gain GaN-on-Si HPA with a GaAs output matching circuit exhibits an output power of 15–30W, associate gain of 27–30dB, and PAE of 26–33% over 9.0–11.0GHz. The GaN-on-Si MMIC switch demonstrates insertion losses of 1.1–1.3dB and isolation of 10.1– 14.7dB over 8.0–11.5GHz. By employing cost-e ﬀ ective circuit conﬁgu-rations, the costs of these chipsets are estimated to be about half that of conventional chipsets","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"44 1","pages":"194-202"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85978954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

4-Cycle-Start-Up Reference-Clock-Less Digital CDR Utilizing TDC-Based Initial Frequency Error Detection with Frequency Tracking Loop 基于tdc的初始频率误差检测与频率跟踪环路的4周期启动参考无时钟数字话单

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ctp0001

T. Iizuka, Meikan Chin, T. Nakura, K. Asada

{"title":"4-Cycle-Start-Up Reference-Clock-Less Digital CDR Utilizing TDC-Based Initial Frequency Error Detection with Frequency Tracking Loop","authors":"T. Iizuka, Meikan Chin, T. Nakura, K. Asada","doi":"10.1587/transele.2021ctp0001","DOIUrl":"https://doi.org/10.1587/transele.2021ctp0001","url":null,"abstract":"SUMMARY This paper proposes a reference-clock-less quick-start-up CDR that resumes from a stand-by state only with a 4-bit preamble utilizing a phase generator with an embedded Time-to-Digital Converter (TDC). The phase generator detects 1-UI time interval by using its internal TDC and works as a self-tunable digitally-controlled delay line. Once the phase gen- erator coarsely tunes the recovered clock period, then the residual time difference is ﬁnely tuned by a ﬁne Digital-to-Time Converter (DTC). Since the tuning resolution of the ﬁne DTC is matched by design with the time resolution of the TDC that is used as a phase detector, the ﬁne tuning completes instantaneously. After the initial coarse and ﬁne delay tuning, the feedback loop for frequency tracking is activated in order to improve Consecutive Identical Digits (CID) tolerance of the CDR. By applying the frequency tracking architecture, the proposed CDR achieves more than 100bits of CID tolerance. A prototype implemented in a 65nm bulk CMOS process operates at a 0.9 − 2.15Gbps continuous rate. It consumes 5.1 − 8.4mA in its active state and 42µA leakage current in its stand-by state from a 1.0V supply. key words: Clock-and-data recovery (CDR),","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"79 1","pages":"544-551"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83917774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Volume Integral Equations Combined with Orthogonality of Modes for Analysis of Two-Dimensional Optical Slab Waveguide 结合模正交性的体积积分方程分析二维平板光波导

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021rep0002

Masahiro Tanaka

引用次数: 0

Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver 用简单稳健的栅极驱动器抑制SiC-MOSFET体二极管关断的噪声

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ecp5030

H. Suzuki, T. Funaki

引用次数: 0

A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications 毫米波应用GaN MMIC功率放大器技术综述

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2022mmi0006

K. Nakatani, Y. Yamaguchi, Takuma Torii, M. Tsuru

引用次数: 4

Multi-Port Amplifier with Enhanced Linearity and Isolation Employing Feed-Forward Techniques 采用前馈技术提高线性度和隔离度的多端口放大器

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2022mmp0005

Yasunori Suzuki, T. Hirota, T. Nojima

引用次数: 0

Return Loss Measurement Procedure for Multicore Fiber Connectors 多芯光纤连接器回波损耗测量程序

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2022emp0001

Kiyoshi Kamimura, Y. Fujimaki, Haruki Hoshikawa, Kazuki Imaizumi, K. Izawa, R. Nagase

{"title":"Return Loss Measurement Procedure for Multicore Fiber Connectors","authors":"Kiyoshi Kamimura, Y. Fujimaki, Haruki Hoshikawa, Kazuki Imaizumi, K. Izawa, R. Nagase","doi":"10.1587/transele.2022emp0001","DOIUrl":"https://doi.org/10.1587/transele.2022emp0001","url":null,"abstract":"SUMMARY Multi-core ﬁber (MCF) is one of the most promising can- didates for achieving ultra-wideband optical transmission in the near fu-ture. To build a network using MCF, a high-performance and reliable MCF connector is indispensable. We have developed an SC-type optical connector for MCF and conﬁrmed its excellent optical performance, mechanical durability, and environmental reliability. To put the communication system using MCF into practical use, it is necessary to establish a procedure for measuring the initial connection characteristics. Fan-in / fan-out (FIFO) devices are indispensable for measuring the connection characteristics of MCF connectors. To measure the return loss of the MCF connector, it is necessary to remove the inﬂuence of reﬂection at the FIFO itself and at the connection points with the FIFO. In this paper, we compare four types of return loss measurement procedures (three usual method and a new method we proposed) and ﬁnd that most stable measurement method involves using our new method, the OCWR method without FIFO. The OCWR method without FIFO is considered to be the most advantageous when used for outgoing inspection of connectors. The reason is that it eliminates the mea- surement uncertainty caused by the FIFO and enables speedy measurement.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"2016 1","pages":"721-728"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89895585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures 磷δ掺杂Si-QDs/未掺杂Si-QDs多堆叠结构的电子发射研究

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021fup0006

K. Makihara, T. Takemoto, Shuji Obayashi, A. Ohta, N. Taoka, S. Miyazaki

引用次数: 0

Numerical Analysis of Pulse Response for Slanted Grating Structure with an Air Regions in Dispersion Media by TE Case 色散介质中带有空气区的倾斜光栅结构脉冲响应的TE数值分析

IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021res0001

R. Ozaki, T. Yamasaki

引用次数: 2