IEICE Trans. Electron.最新文献

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Ambipolar Conduction of λ-DNA Transistor Fabricated on SiO2/Si Structure SiO2/Si结构λ-DNA晶体管的双极性导电
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ecp5049
N. Matsuo, K. Yoshida, K. Sumitomo, K. Yamana, T. Tabei
{"title":"Ambipolar Conduction of λ-DNA Transistor Fabricated on SiO2/Si Structure","authors":"N. Matsuo, K. Yoshida, K. Sumitomo, K. Yamana, T. Tabei","doi":"10.1587/transele.2021ecp5049","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5049","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"320 1","pages":"369-374"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76459834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation 中间层对铁电未掺杂HfO2形成的影响
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021fup0004
Masakazu Tanuma, Joong‐Won Shin, S. Ohmi
{"title":"The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation","authors":"Masakazu Tanuma, Joong‐Won Shin, S. Ohmi","doi":"10.1587/transele.2021fup0004","DOIUrl":"https://doi.org/10.1587/transele.2021fup0004","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"8 1","pages":"584-588"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79095864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
SRAM: A Septum-Type Polarizer Design Method Based on Superposed Even- and Odd-Mode Excitation Analysis SRAM:一种基于奇偶模叠加激励分析的隔膜型偏振片设计方法
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ecp5012
Tomoki Kaneko, H. Saito, A. Hirose
{"title":"SRAM: A Septum-Type Polarizer Design Method Based on Superposed Even- and Odd-Mode Excitation Analysis","authors":"Tomoki Kaneko, H. Saito, A. Hirose","doi":"10.1587/transele.2021ecp5012","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5012","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"52 1","pages":"9-17"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79106538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Topology Optimal Design of NRD Guide Devices Using Function Expansion Method and Evolutionary Approaches 基于函数展开法和进化方法的NRD导向装置拓扑优化设计
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021esp0005
Naoya Hieda, K. Morimoto, A. Iguchi, Y. Tsuji, T. Kashiwa
{"title":"Topology Optimal Design of NRD Guide Devices Using Function Expansion Method and Evolutionary Approaches","authors":"Naoya Hieda, K. Morimoto, A. Iguchi, Y. Tsuji, T. Kashiwa","doi":"10.1587/transele.2021esp0005","DOIUrl":"https://doi.org/10.1587/transele.2021esp0005","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"14 1","pages":"652-659"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76261020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A Discussion on Physical Optics Approximation for Edge Diffraction by A Conducting Wedge 关于导楔边缘衍射的物理光学近似的讨论
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ecp5031
Duc Minh Nguyen, H. Shirai
{"title":"A Discussion on Physical Optics Approximation for Edge Diffraction by A Conducting Wedge","authors":"Duc Minh Nguyen, H. Shirai","doi":"10.1587/transele.2021ecp5031","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5031","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"94 1","pages":"176-183"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81426404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deep-Learning-Assisted Single-Pixel Imaging for Gesture Recognition in Consideration of Privacy 考虑隐私的深度学习辅助单像素手势识别
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021dii0002
Naoya Mukojima, Masaki Yasugi, Y. Mizutani, T. Yasui, Hirotsugu Yamamoto
{"title":"Deep-Learning-Assisted Single-Pixel Imaging for Gesture Recognition in Consideration of Privacy","authors":"Naoya Mukojima, Masaki Yasugi, Y. Mizutani, T. Yasui, Hirotsugu Yamamoto","doi":"10.1587/transele.2021dii0002","DOIUrl":"https://doi.org/10.1587/transele.2021dii0002","url":null,"abstract":"SUMMARY We have utilized single-pixel imaging and deep-learning to solve the privacy-preserving problem in gesture recognition for interactive display. Silhouette images of hand gestures were acquired by use of a display panel as an illumination. Reconstructions of gesture images have been performed by numerical experiments on single-pixel imaging by changing the number of illumination mask patterns. For the training and the image restoration with deep learning, we prepared reconstructed data with 250 and 500 illuminations as datasets. For each of the 250 and 500 illuminations, we prepared 9000 datasets in which original images and reconstructed data were paired. Of these data, 8500 data were used for training a neural network (6800 data for training and 1700 data for validation), and 500 data were used to evaluate the accuracy of image restoration. Our neural network, based on U-net, was able to restore images close to the original images even from reconstructed data with greatly reduced number of illuminations, which is 1/40 of the single-pixel imaging without deep learning. Compared restoration accuracy between cases using shadowgraph (black on white background) and negative-positive reversed images (white on black background) as silhouette image, the accuracy of the restored image was lower for negative-positive-reversed images when the number of illuminations was small. Moreover, we found that the restoration accuracy decreased in the order of rock, scissor, and paper. Shadowgraph is suitable for gesture silhouette, and it is necessary to prepare training data and construct neural networks, to avoid the restoration accuracy between gestures when further reducing the number of illuminations.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"735 1","pages":"79-85"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78763694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers f类和反f类功率放大器晶体管电流源限制效率的因素分析
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2022mmi0003
H. Yamamoto, K. Kikuchi, V. Vadalà, G. Bosi, A. Raffo, G. Vannini
{"title":"Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers","authors":"H. Yamamoto, K. Kikuchi, V. Vadalà, G. Bosi, A. Raffo, G. Vannini","doi":"10.1587/transele.2022mmi0003","DOIUrl":"https://doi.org/10.1587/transele.2022mmi0003","url":null,"abstract":"SUMMARY This paper describes the efficiency-limiting factors resulting from transistor current source in the case of class-F and inverse class-F (F -1 ) operations under saturated region. We investigated the influence of knee voltage and gate-voltage clipping behaviors on drain efficiency as limiting factors for the current source. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for class-F -1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT validate our analytical results.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"28 1","pages":"449-456"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91250125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
28nm Atom-Switch FPGA: Static Timing Analysis and Evaluation 28nm原子开关FPGA:静态时序分析与评估
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021fus0005
X. Bai, R. Nebashi, M. Miyamura, Kazunori Funahashi, N. Banno, K. Okamoto, Hideaki Numata, N. Iguchi, T. Sugibayashi, T. Sakamoto, M. Tada
{"title":"28nm Atom-Switch FPGA: Static Timing Analysis and Evaluation","authors":"X. Bai, R. Nebashi, M. Miyamura, Kazunori Funahashi, N. Banno, K. Okamoto, Hideaki Numata, N. Iguchi, T. Sugibayashi, T. Sakamoto, M. Tada","doi":"10.1587/transele.2021fus0005","DOIUrl":"https://doi.org/10.1587/transele.2021fus0005","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"36 1","pages":"627-630"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81947829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Self-Powered Flyback Pulse Resonant Circuit for Combined Piezoelectric and Thermoelectric Energy Harvesting 一种用于压电和热电联合能量收集的自供电反激脉冲谐振电路
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021ecp5003
Huakang Xia, Yidie Ye, Xiudeng Wang, Ge Shi, Zhidong Chen, Libo Qian, Yinshui Xia
{"title":"A Self-Powered Flyback Pulse Resonant Circuit for Combined Piezoelectric and Thermoelectric Energy Harvesting","authors":"Huakang Xia, Yidie Ye, Xiudeng Wang, Ge Shi, Zhidong Chen, Libo Qian, Yinshui Xia","doi":"10.1587/transele.2021ecp5003","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5003","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"18 1","pages":"24-34"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89261765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer 溅射气体压力对具有非晶Rubrene钝化层的五苯基背栅式浮栅存储器LaBxNy绝缘体形成的影响
IEICE Trans. Electron. Pub Date : 2022-01-01 DOI: 10.1587/transele.2021fup0005
E. Hong, K. Park, S. Ohmi
{"title":"Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer","authors":"E. Hong, K. Park, S. Ohmi","doi":"10.1587/transele.2021fup0005","DOIUrl":"https://doi.org/10.1587/transele.2021fup0005","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"1 1","pages":"589-595"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86400580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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