{"title":"溅射气体压力对具有非晶Rubrene钝化层的五苯基背栅式浮栅存储器LaBxNy绝缘体形成的影响","authors":"E. Hong, K. Park, S. Ohmi","doi":"10.1587/transele.2021fup0005","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"1 1","pages":"589-595"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer\",\"authors\":\"E. Hong, K. Park, S. Ohmi\",\"doi\":\"10.1587/transele.2021fup0005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":13259,\"journal\":{\"name\":\"IEICE Trans. Electron.\",\"volume\":\"1 1\",\"pages\":\"589-595\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEICE Trans. Electron.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1587/transele.2021fup0005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEICE Trans. Electron.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/transele.2021fup0005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer