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Analog Characterization of III-V on SOI Electro-Absorption Modulators SOI电吸收调制器上III-V的模拟表征
IF 2.3 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-06-10 DOI: 10.1109/LPT.2025.3578407
Akeem Safiriyu;Amin Souleiman;Salim Faci;Anne-Laure Billabert;Catherine Algani;Joan Ramirez
{"title":"Analog Characterization of III-V on SOI Electro-Absorption Modulators","authors":"Akeem Safiriyu;Amin Souleiman;Salim Faci;Anne-Laure Billabert;Catherine Algani;Joan Ramirez","doi":"10.1109/LPT.2025.3578407","DOIUrl":"https://doi.org/10.1109/LPT.2025.3578407","url":null,"abstract":"This letter describes the analog performance of two heterogeneous integrated III-V Electro-Absorption Modulators (EAMs) on SOI with lengths of <inline-formula> <tex-math>$150~mathrm {mu m}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$200~mathrm {mu m}$ </tex-math></inline-formula>. Extinction ratios of 8.7 dB and 15 dB were measured in both EAMs under 3 V reverse bias voltage, with a maximum slope efficiency of <inline-formula> <tex-math>$~1.97~mathrm {V^{-1}}$ </tex-math></inline-formula> in the longer EAM at 0 V. The second and third order spurious-free dynamic range of these EAMs were measured to compare how their dynamic ranges are impacted due to change in bias voltage and laser wavelength detuning.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 17","pages":"1013-1016"},"PeriodicalIF":2.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Photonics Technology Letters Information for Authors IEEE Photonics Technology Letters for Authors
IF 2.3 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-06-10 DOI: 10.1109/LPT.2025.3565454
{"title":"IEEE Photonics Technology Letters Information for Authors","authors":"","doi":"10.1109/LPT.2025.3565454","DOIUrl":"https://doi.org/10.1109/LPT.2025.3565454","url":null,"abstract":"","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 12","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11029668","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144255565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Photonics Technology Letters Information for Authors IEEE Photonics Technology Letters for Authors
IF 2.3 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-06-10 DOI: 10.1109/LPT.2025.3565428
{"title":"IEEE Photonics Technology Letters Information for Authors","authors":"","doi":"10.1109/LPT.2025.3565428","DOIUrl":"https://doi.org/10.1109/LPT.2025.3565428","url":null,"abstract":"","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 9","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11029644","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144255725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blank Page 空白页
IF 2.3 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-06-10 DOI: 10.1109/LPT.2025.3565444
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引用次数: 0
IEEE Photonics Technology Letters Information for Authors IEEE Photonics Technology Letters for Authors
IF 2.3 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-06-10 DOI: 10.1109/LPT.2025.3565436
{"title":"IEEE Photonics Technology Letters Information for Authors","authors":"","doi":"10.1109/LPT.2025.3565436","DOIUrl":"https://doi.org/10.1109/LPT.2025.3565436","url":null,"abstract":"","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 10","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11029679","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144255563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Photonics Technology Letters Information for Authors IEEE Photonics Technology Letters for Authors
IF 2.3 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-06-10 DOI: 10.1109/LPT.2025.3565448
{"title":"IEEE Photonics Technology Letters Information for Authors","authors":"","doi":"10.1109/LPT.2025.3565448","DOIUrl":"https://doi.org/10.1109/LPT.2025.3565448","url":null,"abstract":"","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 11","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11029673","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144255727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermo-Optical Analysis of O-Band GeSi Quantum Confined Stark Effect Electro-Absorption Modulators o波段GeSi量子受限Stark效应电吸收调制器的热光学分析
IF 2.3 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-06-10 DOI: 10.1109/LPT.2025.3578567
Ahmed Kandeel;Artemisia Tsiara;David Coenen;Hakim Kobbi;Amir Shahin;Conor Coughlan;Javad Rahimi Vaskasi;Yosuke Shimura;Maumita Chakrabarti;Dimitrios Velenis;Filippo Ferraro;Yoojin Ban;Dries Van Thourhout;Joris Van Campenhout
{"title":"Thermo-Optical Analysis of O-Band GeSi Quantum Confined Stark Effect Electro-Absorption Modulators","authors":"Ahmed Kandeel;Artemisia Tsiara;David Coenen;Hakim Kobbi;Amir Shahin;Conor Coughlan;Javad Rahimi Vaskasi;Yosuke Shimura;Maumita Chakrabarti;Dimitrios Velenis;Filippo Ferraro;Yoojin Ban;Dries Van Thourhout;Joris Van Campenhout","doi":"10.1109/LPT.2025.3578567","DOIUrl":"https://doi.org/10.1109/LPT.2025.3578567","url":null,"abstract":"High speed, highly efficient, ultra-compact, and thermally stable modulators are needed to meet the increasing growth in datacenter traffic. This letter demonstrates the temperature-dependent DC performance and reliability study of O-band GeSi quantum confined stark effect (QCSE) electro-absorption modulators (EAM) integrated in a 300 mm silicon photonics platform. The modulator with a width of <inline-formula> <tex-math>$2~mu $ </tex-math></inline-formula>m and a length of <inline-formula> <tex-math>$36.8~mu $ </tex-math></inline-formula>m demonstrated thermal stability in the measurement range of <inline-formula> <tex-math>$25~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$75~^{circ }$ </tex-math></inline-formula>C, with a mean value of the band edge shift coefficient of 0.59 nm/°C. The optimum extinction ratio (ER) undergoes a red shift and is preserved at higher temperatures. The self-heating of the device due to optical absorption is assessed using finite element (FE) simulations, and it is found to be <5 K in most operating conditions. Our results emphasize the promise of the GeSi QCSE EAM for next-generation optical I/O applications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 17","pages":"977-980"},"PeriodicalIF":2.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Investigation on Designing Narrow-Linewidth DBR Filters With SiN Waveguides 用SiN波导设计窄线宽DBR滤波器的研究
IF 2.3 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-06-10 DOI: 10.1109/LPT.2025.3578563
Pranita Kumari Swain;Arnab Goswami;Bijoy Krishna Das
{"title":"An Investigation on Designing Narrow-Linewidth DBR Filters With SiN Waveguides","authors":"Pranita Kumari Swain;Arnab Goswami;Bijoy Krishna Das","doi":"10.1109/LPT.2025.3578563","DOIUrl":"https://doi.org/10.1109/LPT.2025.3578563","url":null,"abstract":"An experimental investigation assisted with coupled mode theory for distributed Bragg reflector (DBR) in a single-mode SiN rib waveguide has been carried out in order to obtain narrow-linewidth and high-extinction filters operating in optical C-band (<inline-formula> <tex-math>$lambda sim 1550$ </tex-math></inline-formula> nm), for silicon photonics applications. A uniform sub-wavelength grating structure with a given periodicity is considered in the cladding region of the rib waveguide structure for the DBR response studies. The upper limit of periodic perturbation strength has been evaluated for designing narrow linewidth and high extinction DBR filters using coupled mode theory approximation. This study enables photonic integrated circuit design engineers to design a relatively simple and shorter length of DBR device (~1 mm) exhibiting a 3-dB bandwidth as narrow as <inline-formula> <tex-math>$sim 1$ </tex-math></inline-formula>-nm and rejection as high as >40-dB, which can be easily integrated for large-scale complex photonic integrated circuit functionalities.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 17","pages":"981-984"},"PeriodicalIF":2.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blank Page 空白页
IF 2.3 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-06-10 DOI: 10.1109/LPT.2025.3565420
{"title":"Blank Page","authors":"","doi":"10.1109/LPT.2025.3565420","DOIUrl":"https://doi.org/10.1109/LPT.2025.3565420","url":null,"abstract":"","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 9","pages":"C4-C4"},"PeriodicalIF":2.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11029675","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144255580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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IF 2.3 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-06-10 DOI: 10.1109/LPT.2025.3565434
{"title":"Blank Page","authors":"","doi":"10.1109/LPT.2025.3565434","DOIUrl":"https://doi.org/10.1109/LPT.2025.3565434","url":null,"abstract":"","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 10","pages":"C4-C4"},"PeriodicalIF":2.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11029585","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144255730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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