{"title":"Analog Characterization of III-V on SOI Electro-Absorption Modulators","authors":"Akeem Safiriyu;Amin Souleiman;Salim Faci;Anne-Laure Billabert;Catherine Algani;Joan Ramirez","doi":"10.1109/LPT.2025.3578407","DOIUrl":"https://doi.org/10.1109/LPT.2025.3578407","url":null,"abstract":"This letter describes the analog performance of two heterogeneous integrated III-V Electro-Absorption Modulators (EAMs) on SOI with lengths of <inline-formula> <tex-math>$150~mathrm {mu m}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$200~mathrm {mu m}$ </tex-math></inline-formula>. Extinction ratios of 8.7 dB and 15 dB were measured in both EAMs under 3 V reverse bias voltage, with a maximum slope efficiency of <inline-formula> <tex-math>$~1.97~mathrm {V^{-1}}$ </tex-math></inline-formula> in the longer EAM at 0 V. The second and third order spurious-free dynamic range of these EAMs were measured to compare how their dynamic ranges are impacted due to change in bias voltage and laser wavelength detuning.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 17","pages":"1013-1016"},"PeriodicalIF":2.3,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}