{"title":"Interactive Skin Display with Epidermal Stimuli Electrode","authors":"Cheolmin Park","doi":"10.23919/am-fpd.2019.8830626","DOIUrl":"https://doi.org/10.23919/am-fpd.2019.8830626","url":null,"abstract":"A novel interactive skin display with epidermal stimuli electrode (ISDEE) is demonstrated, allowing for the simultaneous sensing and display of multiple epidermal stimuli on a single device. It is based on a simple two-layer architecture on an elastomeric polymer composite with light-emitting inorganic phosphors, upon which two electrodes are placed with a certain parallel gap. The ISDEE is directly mounted on human skin, which by itself serves as a field-responsive floating electrode of the display operating under AC. The AC field exerted on the epidermal skin layer depends on the conductance of the skin, which can be modulated based on a variety of physiological skin factors, such as the temperature, sweat gland activity, and pressure.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116477840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Evaluation of Perovskite Photo-sensors with Electron-beam Evaporated Titanium Dioxide Films","authors":"M. F. Hossain, I. Hirano, S. Naka, H. Okada","doi":"10.23919/AM-FPD.2019.8830581","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830581","url":null,"abstract":"We have investigated a perovskite photo-sensors with electron-beam evaporated titanium dioxide (TiO2) film as an electron transport buffer layer. The TiO2 films have been deposited on indium-doped tin oxide (ITO) glass substrate at room temperature. Then, prepared TiO2 films are annealed at different temperatures of between room temperature and 500°C. Device structure is ITO/TiO2/Perovskite layer/2,2,7,7-tetrakis (N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene/Au. Before and after annealing process, TiO2 films have changed from an amorphous to crystalline structure mixed with anatase and rutile phases. For a sensing characteristics, a ratio of photo- and dark-current was 1.1×103 without annealing condition. It is assumed that a flat device structure and a larger photocurrent under illumination are effective to reduce carrier generation site.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126911967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hoon Kim, Bin Zhu, Rajesh Vaddi, Ming-Huang Huang, R. Manley
{"title":"Single-layer Cu Gate Electrode for Large Display Devices","authors":"Hoon Kim, Bin Zhu, Rajesh Vaddi, Ming-Huang Huang, R. Manley","doi":"10.23919/AM-FPD.2019.8830564","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830564","url":null,"abstract":"The feasibility of single Cu layer as bottom gate electrode for large display devices is proposed with adding a thin Cu-Mn alloy as adhesion layer on Corning EAGLE XG® glass substrate. This thin < 10 nm Cu-Mn alloy layer is converted to a pure Cu after annealing by Mn-diffusion to glass. Thus, this stack behaves as a single Cu layer in terms of process. The lowest resistivity of 500 nm Cu stack with 10 nm of 0.5 at.% Mn in the Cu alloy is <1.8 μOhm-cm, and it passed 3 N tape adhesion test after annealing at 300 °C for 60 seconds.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121388102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Gate Insulator Influences on the Electrical Performance of Back-Channel-Etch Amorphous Zinc Tin Oxide (a-ZTO) Thin Film Transistors","authors":"Hongyang Zuo, Letao Zhang, Yukun Yang, Changhui Fan, Shengdong Zhang","doi":"10.23919/AM-FPD.2019.8830567","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830567","url":null,"abstract":"Back-channel-etch amorphous zinc tin oxide thin film transistors (a-ZTO TFTs) are fabricated with various thicknesses and deposition rates of gate insulator (GI). The devices exhibit a higher field-effect mobility and better electrical stress stability with GI thickness decreasing. Furthermore, field-effect mobility and electrical stress stability can be improved by slow GI deposition rate, caused by smoother GI surface. Moreover, combining with percolation theory, we propose a ZTO carrier transport model to explain the experimental phenomenon. The optimized device exhibits good electrical performances: modest saturation mobility of 10 cm2/Vs, on/off ratio > 108 and subthreshold swing of 0.60V/dec. Besides, Vth shift under negative and positive Vgs is −0.28V and +0.17V, respectively.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114562057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Automotive Display Requirements and Development","authors":"V. F. Paz, Efstathios Persidis","doi":"10.23919/AM-FPD.2019.8830570","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830570","url":null,"abstract":"In recent years, displays are gaining increasing importance for automotive applications. However, these displays are not standard displays used in consumer electronics. Instead, they are specifically developed for their respective use case. This includes as well their properties but also fulfillment of automotive requirements. This paper will give a short introduction into the major aspects of development of automotive displays and as well explain the requirements to be met.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121757165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Yamakawa, Yuki Shibayama, H. Yamane, Y. Nakashima, M. Kimura
{"title":"Evaluation of IGZO Synapses for Neuromorphic Systems","authors":"D. Yamakawa, Yuki Shibayama, H. Yamane, Y. Nakashima, M. Kimura","doi":"10.23919/AM-FPD.2019.8830623","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830623","url":null,"abstract":"Artificial intelligences are the most important technology in future societies. However, they are realized as complicated software executed on high-spec hardware, and it is issues that the size is large, and the power consumption is huge. Therefore, it is difficult to incorporate artificial intelligences into IoT equipment. The neuromorphic architecture is a system that imitates the human brain computing system and realizes human brain functions. We fabricated the neuromorphic device using an LSI and IGZO thin films. We evaluated the synaptic characteristics of IGZO thin films and confirmed the basic operation of the synapse device.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116553232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Atomic hydrogen annealing of AlOx/GeOx/a-Ge stack structure fabricated in oxygen atmosphere","authors":"Tomofumi Onuki, A. Heya, N. Matsuo","doi":"10.23919/AM-FPD.2019.8830620","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830620","url":null,"abstract":"To study improvement of electrical characteristics by atomic hydrogen, we investigated effect of atomic hydrogen annealing (AHA) on AlOx/GeOx/a-Ge stack structure. From the electrical properties and X-ray photoelectron spectroscopy analysis, reduction of leakage current and negative charge density in the AlOx/GeOx insulator demonstrated using AlOx/GeOx/a-Ge stack structure. We considered that the leakage current reduction was related to the insulator film quality and hydrogen termination. The reduction of negative charge density was considered that negative charges became inactive by reaction with atomic hydrogens.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127582855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Inorganic-based Flexible Transistors for Circuits and Sensors","authors":"K. Takei","doi":"10.23919/AM-FPD.2019.8830631","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830631","url":null,"abstract":"Flexible electronics are of great interest in the fields of wearable electronics, Internet of Things (IoT) concept, and others, which require to monitor distribution of information from the surfaces. To realize the flexible electronics, a lot of developments are still required to achieve low-cost, macroscale, and high performance components on a flexible and/or stretchable film. In this study, inorganic-based flexible transistor devices are discussed using mainly nanomaterials on a flexible film. In addition to the flexible circuits, chemical sensor applications using an ion-sensitive field-effect transistor and charge-coupled device (CCD) are proposed.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129827837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}