{"title":"电子束蒸发二氧化钛薄膜钙钛矿光传感器的评价","authors":"M. F. Hossain, I. Hirano, S. Naka, H. Okada","doi":"10.23919/AM-FPD.2019.8830581","DOIUrl":null,"url":null,"abstract":"We have investigated a perovskite photo-sensors with electron-beam evaporated titanium dioxide (TiO2) film as an electron transport buffer layer. The TiO2 films have been deposited on indium-doped tin oxide (ITO) glass substrate at room temperature. Then, prepared TiO2 films are annealed at different temperatures of between room temperature and 500°C. Device structure is ITO/TiO2/Perovskite layer/2,2,7,7-tetrakis (N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene/Au. Before and after annealing process, TiO2 films have changed from an amorphous to crystalline structure mixed with anatase and rutile phases. For a sensing characteristics, a ratio of photo- and dark-current was 1.1×103 without annealing condition. It is assumed that a flat device structure and a larger photocurrent under illumination are effective to reduce carrier generation site.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of Perovskite Photo-sensors with Electron-beam Evaporated Titanium Dioxide Films\",\"authors\":\"M. F. Hossain, I. Hirano, S. Naka, H. Okada\",\"doi\":\"10.23919/AM-FPD.2019.8830581\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated a perovskite photo-sensors with electron-beam evaporated titanium dioxide (TiO2) film as an electron transport buffer layer. The TiO2 films have been deposited on indium-doped tin oxide (ITO) glass substrate at room temperature. Then, prepared TiO2 films are annealed at different temperatures of between room temperature and 500°C. Device structure is ITO/TiO2/Perovskite layer/2,2,7,7-tetrakis (N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene/Au. Before and after annealing process, TiO2 films have changed from an amorphous to crystalline structure mixed with anatase and rutile phases. For a sensing characteristics, a ratio of photo- and dark-current was 1.1×103 without annealing condition. It is assumed that a flat device structure and a larger photocurrent under illumination are effective to reduce carrier generation site.\",\"PeriodicalId\":129222,\"journal\":{\"name\":\"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/AM-FPD.2019.8830581\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2019.8830581","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of Perovskite Photo-sensors with Electron-beam Evaporated Titanium Dioxide Films
We have investigated a perovskite photo-sensors with electron-beam evaporated titanium dioxide (TiO2) film as an electron transport buffer layer. The TiO2 films have been deposited on indium-doped tin oxide (ITO) glass substrate at room temperature. Then, prepared TiO2 films are annealed at different temperatures of between room temperature and 500°C. Device structure is ITO/TiO2/Perovskite layer/2,2,7,7-tetrakis (N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene/Au. Before and after annealing process, TiO2 films have changed from an amorphous to crystalline structure mixed with anatase and rutile phases. For a sensing characteristics, a ratio of photo- and dark-current was 1.1×103 without annealing condition. It is assumed that a flat device structure and a larger photocurrent under illumination are effective to reduce carrier generation site.
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