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Iee Journal on Solidstate and Electron Devices最新文献

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Review of technological and economic considerations in solar-cell manufacturing route, encapsulation and system design 综述了太阳能电池制造路线、封装和系统设计的技术和经济考虑
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-06-01 DOI: 10.1049/IJ-SSED:19780020
A. Haigh, D. Hemingway, K. Watkin, A. Whale
{"title":"Review of technological and economic considerations in solar-cell manufacturing route, encapsulation and system design","authors":"A. Haigh, D. Hemingway, K. Watkin, A. Whale","doi":"10.1049/IJ-SSED:19780020","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780020","url":null,"abstract":"A survey of work on terrestrial solar photovoltaic installations using silicon solar cells is presented, and three main areas are discussed. First, the possible processing routes for cell manufacture are considered and conclusions arrived at for the lowest-cost route. Secondly, cell encapsulation is considered with reference to the environmental stresses that an encapsulated module must withstand. Thirdly, the computation of installation parameters for minimum cost is described, an installation being defined as a stationary array of modules in conjunction with a rechargable battery.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125001090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Order-disorder transformations and the nature of the copper-suphide layer in CuxS/CdS solar cells CuxS/CdS太阳能电池中有序-无序转变及硫化铜层性质
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-06-01 DOI: 10.1049/IJ-SSED:19780024
A. Putnis
{"title":"Order-disorder transformations and the nature of the copper-suphide layer in CuxS/CdS solar cells","authors":"A. Putnis","doi":"10.1049/IJ-SSED:19780024","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780024","url":null,"abstract":"The evidence that the two copper–sulphide phases, chalcocite and djurleite, can exist at the same compositions near Cu2S is briefly reviewed. Experimental data suggest that djurleite is the more stable phase at room remperatures and that a polymorphic chacocite→djurleite transformation may take place in the thin copper–sulphide layers present in solar cells. The kinetics of this transformation are discussed and related to low–temperature phase equilibria in the Cu/S systems around Cu2 S2 and to the processes that may operate in solar cells.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121414493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Approaches to low-cost solar cells 低成本太阳能电池的方法
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-06-01 DOI: 10.1049/IJ-SSED:19780018
H. Kressel
{"title":"Approaches to low-cost solar cells","authors":"H. Kressel","doi":"10.1049/IJ-SSED:19780018","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780018","url":null,"abstract":"The paper reviews the major current US approaches to the cost reduction of solar cells, with the emphasis on silicon devices. Single-crystal, ribbon-grown and polycrystalline silicon solar cells are discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"624 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123079519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cadmium-sulphide/copper-sulphide thin-film solar cells: review of methods of producing the CdS and Cu2S layers 硫化镉/硫化铜薄膜太阳能电池:CdS和Cu2S层制备方法综述
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-06-01 DOI: 10.1049/IJ-SSED:19780016
R. Hill
{"title":"Cadmium-sulphide/copper-sulphide thin-film solar cells: review of methods of producing the CdS and Cu2S layers","authors":"R. Hill","doi":"10.1049/IJ-SSED:19780016","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780016","url":null,"abstract":"The methods that have been used successfully for the production of cadmium-sulphide layers in thin-film solar cells are described. The structural, optical and electrical properties of the resulting layers are discussed and related to the properties required in a high-efficiency thin-film solar cell. A description is also given of some less commonly used methods that might be developed into successful techniques for the production of large-area low-cost solar cells","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134485671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gallium-arsenide solar cells for use with concentrated sunlight 用于聚光的砷化镓太阳能电池
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-06-01 DOI: 10.1049/IJ-SSED:19780033
J. Burgess, Robert P. Davis, B. Debney, R. Nicklin
{"title":"Gallium-arsenide solar cells for use with concentrated sunlight","authors":"J. Burgess, Robert P. Davis, B. Debney, R. Nicklin","doi":"10.1049/IJ-SSED:19780033","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780033","url":null,"abstract":"The performance of GaAs/Ga1-xAlxAs solar cells with graded-band-gap and window structures has been compared using standard theoretical modelling techniques. At high levels of solar concentration, superior power-conversion efficiencies are obtained with the graded-band-gap structures. The realisation of band-gap grading requires a precise control of gradation of the aluminium content during epitaxy, which is conveniently achieved using a vapour-phase technique. To grow good-quality Al-containing compounds, we have adopted the metallo-organic chemical-vapour-deposition (m.o.c.v.d.) process for the present work. Our system is designed for a rapid throughput of large-area slices, and complete multilayer structures can be prepared in under two hours. Solar-cell structures of the window type have been prepared bythe m.o.c.v.d. method, and also by liquid-phase epitaxy (l.p.e.). Test cells have been fabricated using in-house processing technology, and solar-cell performance has been assessed at concentration ratios up to 600. The performance of the l.p.e.- grown cells fits closely to that predicted, with the collection efficiency reaching 95#x0025;, Voc = 0.98 V and a fill factor of 0.8 at 1 sun.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132363680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon solar cells for operation in concentrated sunlight 用于在集中阳光下工作的硅太阳能电池
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-06-01 DOI: 10.1049/IJ-SSED:19780023
D. Walsh, J. R. Knight, E. Asl-Soleimani
{"title":"Silicon solar cells for operation in concentrated sunlight","authors":"D. Walsh, J. R. Knight, E. Asl-Soleimani","doi":"10.1049/IJ-SSED:19780023","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780023","url":null,"abstract":"An account is given of the likely applications for silicon solar cells in systems employing optical concentration. The preparation of n+-p-p+ cells from monocrystalline and polycrystalline wafers together with preliminary performance characteristics are reported. A novel type of concentrating solar collector is described.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123472861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schottky-barrier versus homojunction silicon solar cells: a status report 肖特基势垒与同结硅太阳能电池:现状报告
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-06-01 DOI: 10.1049/IJ-SSED:19780012
W. Townsend
{"title":"Schottky-barrier versus homojunction silicon solar cells: a status report","authors":"W. Townsend","doi":"10.1049/IJ-SSED:19780012","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780012","url":null,"abstract":"The present state of silicon Schottky-barrier solar cell (s.b.s.c.) development is reviewed and the relative advantages and disadvantages of this type of cell compared with the competing homojunction cell technology. Recent work on cast silicon substrates is considered, and the conclusion drawn that Schottky-barrier cells are not likely to compete unless a wholly thin-film s.b.s.c. can be developed based on the favourable absorption properties of amorphous silicon. A number of problems requiring solution before s.b.s.c. can compete in terms of reliability and low cost for both thick- and thin-film cells are discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126455746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Surface states in m.i.s. devices of cadmium sulphide 硫化镉的m.i.s装置表面态
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-06-01 DOI: 10.1049/IJ-SSED:19780013
M. Manshadi, J. Woods
{"title":"Surface states in m.i.s. devices of cadmium sulphide","authors":"M. Manshadi, J. Woods","doi":"10.1049/IJ-SSED:19780013","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780013","url":null,"abstract":"Measurements of the shunt conductance of m.i.s. diodes of cadmium sulphide, formed by depositing gold on to surfaces of crystals previously etched in hydrochloric acid, are interpreted to suggest that there is a density of surface states of the order of 2.0 X 1011 cm-2 eV-1 at the interface between the CdS and the semi-insulating layer. Comparison of the voltage intercept of the C-2/V plots with the photoelectric threshold suggests that the etching leaves a semi-insulating layer with a thickness of 400?600 A on the surface of the CdS.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130908962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Doped amorphous silicon and its application in photovoltaic devices 掺杂非晶硅及其在光伏器件中的应用
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-06-01 DOI: 10.1049/IJ-SSED:19780019
R. Gibson, P. L. Comber, W. Spear
{"title":"Doped amorphous silicon and its application in photovoltaic devices","authors":"R. Gibson, P. L. Comber, W. Spear","doi":"10.1049/IJ-SSED:19780019","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780019","url":null,"abstract":"The paper deals with the development of the new field of substitutionally doped amorphous semiconductors, and discusses the possible application of amorphous silicon in cheap large-area photovoltaic devices. Preparation and doping from the gas phase are described and the properties of an amorphous junction are discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"30 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115254587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Doping of sputtered amorphous-silicon solar cells 溅射非晶硅太阳能电池的掺杂
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-06-01 DOI: 10.1049/IJ-SSED:19780025
M. Thompson, J. Allison, M. Alkaisi
{"title":"Doping of sputtered amorphous-silicon solar cells","authors":"M. Thompson, J. Allison, M. Alkaisi","doi":"10.1049/IJ-SSED:19780025","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780025","url":null,"abstract":"The paper describes the progress that has so far been made in the sputtering of amorphous silicon for solar-cell applications. An alternative form of doping to doping from the gas phase is described. The results obtained are compared with those found for glow-discharge silicon. Finally, a discussion of the relative advantages of sputtering techniques emphasises their considerable potential for commercial exploitation in the production of thin-film solar cells.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131818439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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