{"title":"掺杂非晶硅及其在光伏器件中的应用","authors":"R. Gibson, P. L. Comber, W. Spear","doi":"10.1049/IJ-SSED:19780019","DOIUrl":null,"url":null,"abstract":"The paper deals with the development of the new field of substitutionally doped amorphous semiconductors, and discusses the possible application of amorphous silicon in cheap large-area photovoltaic devices. Preparation and doping from the gas phase are described and the properties of an amorphous junction are discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"30 7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Doped amorphous silicon and its application in photovoltaic devices\",\"authors\":\"R. Gibson, P. L. Comber, W. Spear\",\"doi\":\"10.1049/IJ-SSED:19780019\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper deals with the development of the new field of substitutionally doped amorphous semiconductors, and discusses the possible application of amorphous silicon in cheap large-area photovoltaic devices. Preparation and doping from the gas phase are described and the properties of an amorphous junction are discussed.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"30 7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19780019\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19780019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Doped amorphous silicon and its application in photovoltaic devices
The paper deals with the development of the new field of substitutionally doped amorphous semiconductors, and discusses the possible application of amorphous silicon in cheap large-area photovoltaic devices. Preparation and doping from the gas phase are described and the properties of an amorphous junction are discussed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
