{"title":"溅射非晶硅太阳能电池的掺杂","authors":"M. Thompson, J. Allison, M. Alkaisi","doi":"10.1049/IJ-SSED:19780025","DOIUrl":null,"url":null,"abstract":"The paper describes the progress that has so far been made in the sputtering of amorphous silicon for solar-cell applications. An alternative form of doping to doping from the gas phase is described. The results obtained are compared with those found for glow-discharge silicon. Finally, a discussion of the relative advantages of sputtering techniques emphasises their considerable potential for commercial exploitation in the production of thin-film solar cells.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Doping of sputtered amorphous-silicon solar cells\",\"authors\":\"M. Thompson, J. Allison, M. Alkaisi\",\"doi\":\"10.1049/IJ-SSED:19780025\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper describes the progress that has so far been made in the sputtering of amorphous silicon for solar-cell applications. An alternative form of doping to doping from the gas phase is described. The results obtained are compared with those found for glow-discharge silicon. Finally, a discussion of the relative advantages of sputtering techniques emphasises their considerable potential for commercial exploitation in the production of thin-film solar cells.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19780025\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19780025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The paper describes the progress that has so far been made in the sputtering of amorphous silicon for solar-cell applications. An alternative form of doping to doping from the gas phase is described. The results obtained are compared with those found for glow-discharge silicon. Finally, a discussion of the relative advantages of sputtering techniques emphasises their considerable potential for commercial exploitation in the production of thin-film solar cells.