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2005 International Vacuum Nanoelectronics Conference最新文献

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Influence of nanocrystalline structure on work function of tungsten 纳米晶结构对钨的功函数的影响
2005 International Vacuum Nanoelectronics Conference Pub Date : 2006-03-28 DOI: 10.1116/1.2174024
R. Mulyukov
{"title":"Influence of nanocrystalline structure on work function of tungsten","authors":"R. Mulyukov","doi":"10.1116/1.2174024","DOIUrl":"https://doi.org/10.1116/1.2174024","url":null,"abstract":"Nanocrystalline structure with average grain size about 100 nm is processed in specimens of tungsten by severe plastic deformation. The microstructure is studied by ion and transmission electron microscopy. Spectra for probing area containing grain boundary has an additional peak. In the case of areas away from the grain boundary the electron energy distribution are similar to the classical one and expected from the Fowler-Nordheim theory. The work function is determined by electron-beam measurement of the contact potential difference. It has been revealed that the formation of a nanocrystalline structure results in a decrease in the electron work function of a metal. For tungsten with a grain size of about 100 nm, this decrease is equal to 0.8 V","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127251251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Field-enhanced photoemission from metals and coated materials 金属和涂层材料的场增强光发射
2005 International Vacuum Nanoelectronics Conference Pub Date : 2006-03-27 DOI: 10.1116/1.2183780
K. Jensen, D. Feldman, N. Moody, J. Shaw, J. Yater, P. O'Shea
{"title":"Field-enhanced photoemission from metals and coated materials","authors":"K. Jensen, D. Feldman, N. Moody, J. Shaw, J. Yater, P. O'Shea","doi":"10.1116/1.2183780","DOIUrl":"https://doi.org/10.1116/1.2183780","url":null,"abstract":"Photocathode performance is modelled to account for issues that affect electron transport. Theoretical models of field, thermal, and surface effects on photoemission from sub-monolayer low work function coated surfaces as a function of laser parameters, temperature, and applied field are discussed. A time-dependent model of laser heating, thermal propagation, and photoemission and the relative importance of field, thermal, and photoemission contribution are presented.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117316884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Microchannel plates at high rates - the challenges for future space plasma missions 高速微通道板——未来空间等离子体任务的挑战
2005 International Vacuum Nanoelectronics Conference Pub Date : 2005-07-10 DOI: 10.1116/1.2183786
D. Kataria
{"title":"Microchannel plates at high rates - the challenges for future space plasma missions","authors":"D. Kataria","doi":"10.1116/1.2183786","DOIUrl":"https://doi.org/10.1116/1.2183786","url":null,"abstract":"The rate performance of microchannel plates (MCPs) used in the PEACE instruments of the Cluster and Double Star mission is discussed. MCPs are currently the preferred sensor element for the detection of low energy (~0 to 30 keV) electrons and ions in space plasma instruments. Low resistance plates have recently been tested for pulse height distribution and an increase in the rate handling by a factor of three have been achieved. However, for future applications, a factor of more than 25 will be required","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124285855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Development of a low emittance electron gun based on field emission cathodes 基于场发射阴极的低发射电子枪的研制
2005 International Vacuum Nanoelectronics Conference Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619577
R. Ganter, R. Bakker, R. Betemps, M. Dehler, T. Gerber, J. Gobrecht, C. Gough, M. Johnson, E. Kirk, G. Knopp, F. le Pimpec, K. Li, M. Paraliev, M. Pedrozzi, L. Rivkin, H. Sehr, L. Schulz, A. Wrulich
{"title":"Development of a low emittance electron gun based on field emission cathodes","authors":"R. Ganter, R. Bakker, R. Betemps, M. Dehler, T. Gerber, J. Gobrecht, C. Gough, M. Johnson, E. Kirk, G. Knopp, F. le Pimpec, K. Li, M. Paraliev, M. Pedrozzi, L. Rivkin, H. Sehr, L. Schulz, A. Wrulich","doi":"10.1109/IVNC.2005.1619577","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619577","url":null,"abstract":"Field emitters are investigated for use as a low emittance electron gun. Two available field emitter technologies are currently explored; the field emitter arrays (FEAs) with individual focusing and single tip cathode with robust and fairly blunt apex. The challenge is to achieve several amperes of peak current without tip destructions. Very good cathode and environmental conditioning procedures with extremely short emission duration (ns) at low repetition rate (10 Hz) gave encouraging results to reach high peak current emission. For a free electron laser application, very short emission durations are preferred. Such operation regime should prevent the tip from overheating so that higher current densities could be reached. Another possible low emittance electron sources are single needle tips made from etched wires and which can be coated and formed in order to carry high current emission. One way to achieve short emission duration is to use pulsed laser light illuminating the tip while high electric field is applied.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127551364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Field emission from heavily phosphorus-doped homoepitaxial diamond 重掺磷同外延金刚石的场发射
2005 International Vacuum Nanoelectronics Conference Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619567
T. Yamada, H. Kato, D. Takeuchi, S. Shikata, C. Nebel, H. Yamaguchi, Y. Kudo, K. Okano
{"title":"Field emission from heavily phosphorus-doped homoepitaxial diamond","authors":"T. Yamada, H. Kato, D. Takeuchi, S. Shikata, C. Nebel, H. Yamaguchi, Y. Kudo, K. Okano","doi":"10.1109/IVNC.2005.1619567","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619567","url":null,"abstract":"Field emission characteristics of heavily phosphorus doped homoepitaxial diamond (111) after H-plasma treatment and wet chemical oxidization are discussed. Although H-terminated surface has a negative electron affinity (NEA), higher threshold voltage have to be applied compared to wet chemical oxidized surface with a positive electron affinity (PEA). From field emission results and surface characterizations, we conclude that a surface electric field is present which prevents electrons in the bulk of diamond to reach the vacuum level.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116601618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The pFED - a viable route to large field emission displays pFED -一个可行的路线，以大场发射显示器
2005 International Vacuum Nanoelectronics Conference Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619494
R. A. Tuck, W. Taylor, M. Waite, H. Bishop, R. Riggs, J. J. Browning
{"title":"The pFED - a viable route to large field emission displays","authors":"R. A. Tuck, W. Taylor, M. Waite, H. Bishop, R. Riggs, J. J. Browning","doi":"10.1109/IVNC.2005.1619494","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619494","url":null,"abstract":"The authors have followed a unique path to a next-generation field emitting display (pFED) using an emitter formed from micron-sized graphite particles coated with a nanoscale silica insulator. The emitter is fully oxidised as part of the deposition process and so is immune to the sealing problems that plague CNTs. pFED improve with sealing.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124786830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Fabrication and characteristics of flat lamp with CNT based triode structure for back light unit in LCD 液晶显示器背光单元用碳纳米管三极管结构平板灯的制造与特性
2005 International Vacuum Nanoelectronics Conference Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619556
Y. Jung, Jae-Hong Park, Jin-Su Jeong, J. Nam, A. Berdinsky, J. Yoo, Chong-Yun Park
{"title":"Fabrication and characteristics of flat lamp with CNT based triode structure for back light unit in LCD","authors":"Y. Jung, Jae-Hong Park, Jin-Su Jeong, J. Nam, A. Berdinsky, J. Yoo, Chong-Yun Park","doi":"10.1109/IVNC.2005.1619556","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619556","url":null,"abstract":"Instead of the CVD method to form a gate oxide layer, a wet-etching method was used to form an insulating layer and isolate cathode layer from gate electrode. The wet-etching process has many advantages such as simple manufacture process, mass production and low cost. A gate triode structure was fabricated because of its simplicity in fabrication process and beam broadening. A new type of triode structure using wet-etching process was made and their field emission characteristics, uniformity and efficiency for light source for backlight units(BLU) were investigated","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126978732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High current/high current density carbon nanotube cold cathodes 大电流/大电流密度碳纳米管冷阴极
2005 International Vacuum Nanoelectronics Conference Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619489
E. Minoux, P. Vincent, L. Hudanski, J. Schnell, P. Legagneux, K. Teo, L. Gangloff, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne
{"title":"High current/high current density carbon nanotube cold cathodes","authors":"E. Minoux, P. Vincent, L. Hudanski, J. Schnell, P. Legagneux, K. Teo, L. Gangloff, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne","doi":"10.1109/IVNC.2005.1619489","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619489","url":null,"abstract":"Field emission measurements on individual carbon nanotubes grown by dc plasma CVD at 700/spl deg/C have been performed with a high resolution scanning anode field emission microscope. I-V characteristics of as-grown CNs show a saturation for currents above 1 /spl mu/A and the maximum emission current is in the range 5-10 /spl mu/A. This saturation is attributed to a bad CN/substrate contact. By improving this electric contact by thermal annealing at 950/spl deg/C, the saturation is suppressed. To improve emission current density, the effect of CN density on maximum emission current is studied. For this purpose, 0.5 /spl times/ 0.5 mm/sup 2/ arrays of vertically aligned CNs with a 1.5 /spl mu/m height, a 15 nm diameter and a 3 /spl mu/m spacing are grown. The CN density is 10/sup 7/ cm/sup -2/. CNs exhibit almost the same aspect ratio [200] but the CN density is increased by a factor of 10. From such an array, an emission current of 10 mA corresponding to a current density of 4 A cm/sup -2/ is measured.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123728401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of key technologies for carbon nanotube FEDs in Japanese national project 日本国家项目碳纳米管fed关键技术开发
2005 International Vacuum Nanoelectronics Conference Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619483
S. Okuda, A. Hosono, T. Shiroishi, K. Nishimura, S. Nakata, M. Takai, J. Ishikawa, Y. Gotoh, S. Uemura, J. Yotani, H. Kurachi, N. Hayashi, M. Okai, T. Sugawara, T. Murakami, Y. Kuroki
{"title":"Development of key technologies for carbon nanotube FEDs in Japanese national project","authors":"S. Okuda, A. Hosono, T. Shiroishi, K. Nishimura, S. Nakata, M. Takai, J. Ishikawa, Y. Gotoh, S. Uemura, J. Yotani, H. Kurachi, N. Hayashi, M. Okai, T. Sugawara, T. Murakami, Y. Kuroki","doi":"10.1109/IVNC.2005.1619483","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619483","url":null,"abstract":"The paper gives an overview of results achieved by a three-year project of the Japanese government on carbon nanotube field emission display (CNT-FED). The issues of the project are the development of uniform electron source and the development of glass panel technologies. Electron source development methods include, high-temperature CVD method, low-temperature CVD method, and printing method and activation technologies. In the case of glass panel technologies, main subjects include the development of basic panel structure and heat-resistant lead-free sealing material.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"529 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116215137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Microstructure and field emission characteristics of screen-printed carbon nanotube cold cathode 丝网印刷碳纳米管冷阴极的微观结构和场发射特性
2005 International Vacuum Nanoelectronics Conference Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619616
Jun Yu, Jun Chen, J. She, S. Deng, N. Xu
{"title":"Microstructure and field emission characteristics of screen-printed carbon nanotube cold cathode","authors":"Jun Yu, Jun Chen, J. She, S. Deng, N. Xu","doi":"10.1109/IVNC.2005.1619616","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619616","url":null,"abstract":"The field emission characteristics and microstructure of the screen-printed CNT cathode with different CNT contents were studied. It was found that only the cathode with appropriate CNT contents has low turn-on field and high emission current density.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121653363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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