T. Yamada, H. Kato, D. Takeuchi, S. Shikata, C. Nebel, H. Yamaguchi, Y. Kudo, K. Okano
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Field emission from heavily phosphorus-doped homoepitaxial diamond
Field emission characteristics of heavily phosphorus doped homoepitaxial diamond (111) after H-plasma treatment and wet chemical oxidization are discussed. Although H-terminated surface has a negative electron affinity (NEA), higher threshold voltage have to be applied compared to wet chemical oxidized surface with a positive electron affinity (PEA). From field emission results and surface characterizations, we conclude that a surface electric field is present which prevents electrons in the bulk of diamond to reach the vacuum level.
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