E. Minoux, P. Vincent, L. Hudanski, J. Schnell, P. Legagneux, K. Teo, L. Gangloff, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne
{"title":"大电流/大电流密度碳纳米管冷阴极","authors":"E. Minoux, P. Vincent, L. Hudanski, J. Schnell, P. Legagneux, K. Teo, L. Gangloff, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne","doi":"10.1109/IVNC.2005.1619489","DOIUrl":null,"url":null,"abstract":"Field emission measurements on individual carbon nanotubes grown by dc plasma CVD at 700/spl deg/C have been performed with a high resolution scanning anode field emission microscope. I-V characteristics of as-grown CNs show a saturation for currents above 1 /spl mu/A and the maximum emission current is in the range 5-10 /spl mu/A. This saturation is attributed to a bad CN/substrate contact. By improving this electric contact by thermal annealing at 950/spl deg/C, the saturation is suppressed. To improve emission current density, the effect of CN density on maximum emission current is studied. For this purpose, 0.5 /spl times/ 0.5 mm/sup 2/ arrays of vertically aligned CNs with a 1.5 /spl mu/m height, a 15 nm diameter and a 3 /spl mu/m spacing are grown. The CN density is 10/sup 7/ cm/sup -2/. CNs exhibit almost the same aspect ratio [200] but the CN density is increased by a factor of 10. From such an array, an emission current of 10 mA corresponding to a current density of 4 A cm/sup -2/ is measured.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High current/high current density carbon nanotube cold cathodes\",\"authors\":\"E. Minoux, P. Vincent, L. Hudanski, J. Schnell, P. Legagneux, K. Teo, L. Gangloff, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne\",\"doi\":\"10.1109/IVNC.2005.1619489\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Field emission measurements on individual carbon nanotubes grown by dc plasma CVD at 700/spl deg/C have been performed with a high resolution scanning anode field emission microscope. I-V characteristics of as-grown CNs show a saturation for currents above 1 /spl mu/A and the maximum emission current is in the range 5-10 /spl mu/A. This saturation is attributed to a bad CN/substrate contact. By improving this electric contact by thermal annealing at 950/spl deg/C, the saturation is suppressed. To improve emission current density, the effect of CN density on maximum emission current is studied. For this purpose, 0.5 /spl times/ 0.5 mm/sup 2/ arrays of vertically aligned CNs with a 1.5 /spl mu/m height, a 15 nm diameter and a 3 /spl mu/m spacing are grown. The CN density is 10/sup 7/ cm/sup -2/. CNs exhibit almost the same aspect ratio [200] but the CN density is increased by a factor of 10. From such an array, an emission current of 10 mA corresponding to a current density of 4 A cm/sup -2/ is measured.\",\"PeriodicalId\":121164,\"journal\":{\"name\":\"2005 International Vacuum Nanoelectronics Conference\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 International Vacuum Nanoelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2005.1619489\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 International Vacuum Nanoelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2005.1619489","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High current/high current density carbon nanotube cold cathodes
Field emission measurements on individual carbon nanotubes grown by dc plasma CVD at 700/spl deg/C have been performed with a high resolution scanning anode field emission microscope. I-V characteristics of as-grown CNs show a saturation for currents above 1 /spl mu/A and the maximum emission current is in the range 5-10 /spl mu/A. This saturation is attributed to a bad CN/substrate contact. By improving this electric contact by thermal annealing at 950/spl deg/C, the saturation is suppressed. To improve emission current density, the effect of CN density on maximum emission current is studied. For this purpose, 0.5 /spl times/ 0.5 mm/sup 2/ arrays of vertically aligned CNs with a 1.5 /spl mu/m height, a 15 nm diameter and a 3 /spl mu/m spacing are grown. The CN density is 10/sup 7/ cm/sup -2/. CNs exhibit almost the same aspect ratio [200] but the CN density is increased by a factor of 10. From such an array, an emission current of 10 mA corresponding to a current density of 4 A cm/sup -2/ is measured.