大电流/大电流密度碳纳米管冷阴极

E. Minoux, P. Vincent, L. Hudanski, J. Schnell, P. Legagneux, K. Teo, L. Gangloff, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne
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引用次数: 1

摘要

采用高分辨率扫描阳极场发射显微镜,对700/spl度/C直流等离子体CVD生长的单个碳纳米管进行了场发射测量。生长CNs的I-V特性表明,当电流大于1 /spl mu/ a时,CNs达到饱和,最大发射电流在5-10 /spl mu/ a范围内。这种饱和归因于不良的CN/substrate接触。通过在950/spl℃下的热退火来改善这种电接触,抑制了饱和。为了提高发射电流密度,研究了CN密度对最大发射电流的影响。为此,种植了0.5 /spl倍/ 0.5 mm/sup / /阵列的垂直排列cnns,高度为1.5 /spl亩/米,直径为15纳米,间距为3 /spl亩/米。CN密度是10/sup 7/ cm/sup -2/。神经网络显示出几乎相同的纵横比[200],但神经网络密度增加了10倍。从这样的阵列,发射电流为10ma,对应于电流密度为4a cm/sup -2/。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High current/high current density carbon nanotube cold cathodes
Field emission measurements on individual carbon nanotubes grown by dc plasma CVD at 700/spl deg/C have been performed with a high resolution scanning anode field emission microscope. I-V characteristics of as-grown CNs show a saturation for currents above 1 /spl mu/A and the maximum emission current is in the range 5-10 /spl mu/A. This saturation is attributed to a bad CN/substrate contact. By improving this electric contact by thermal annealing at 950/spl deg/C, the saturation is suppressed. To improve emission current density, the effect of CN density on maximum emission current is studied. For this purpose, 0.5 /spl times/ 0.5 mm/sup 2/ arrays of vertically aligned CNs with a 1.5 /spl mu/m height, a 15 nm diameter and a 3 /spl mu/m spacing are grown. The CN density is 10/sup 7/ cm/sup -2/. CNs exhibit almost the same aspect ratio [200] but the CN density is increased by a factor of 10. From such an array, an emission current of 10 mA corresponding to a current density of 4 A cm/sup -2/ is measured.
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