Fabrication and characteristics of flat lamp with CNT based triode structure for back light unit in LCD

Abstract

Instead of the CVD method to form a gate oxide layer, a wet-etching method was used to form an insulating layer and isolate cathode layer from gate electrode. The wet-etching process has many advantages such as simple manufacture process, mass production and low cost. A gate triode structure was fabricated because of its simplicity in fabrication process and beam broadening. A new type of triode structure using wet-etching process was made and their field emission characteristics, uniformity and efficiency for light source for backlight units(BLU) were investigated