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2009 9th International Conference on Numerical Simulation of Optoelectronic Devices最新文献

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Maximum output power of broad-area laser diodes 广域激光二极管的最大输出功率
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297211
H. Wenzel, P. Crump, A. Pietrzak, C. Roder, R. Staske, X. Wang, G. Erbert
{"title":"Maximum output power of broad-area laser diodes","authors":"H. Wenzel, P. Crump, A. Pietrzak, C. Roder, R. Staske, X. Wang, G. Erbert","doi":"10.1109/NUSOD.2009.5297211","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297211","url":null,"abstract":"The causes for the saturation of both the continuous-wave and the pulsed output power of broad-area laser diodes driven at very high currents are investigated experimentally and theoretically. The decrease of the gain due to self-heating under continuous-wave operation and spectral holeburning and carrier heating under pulsed operation as well as hetero-barrier carrier leakage and longitudinal spatial holeburning are the dominating mechanisms limiting the maximum achievable output power.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125223222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advanced vectorial simulation of VCSELs with nano structures invited paper 邀请了具有纳米结构的VCSELs的高级矢量模拟
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297222
Il-Sug Chung, J. Mørk
{"title":"Advanced vectorial simulation of VCSELs with nano structures invited paper","authors":"Il-Sug Chung, J. Mørk","doi":"10.1109/NUSOD.2009.5297222","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297222","url":null,"abstract":"The single-mode properties and design issues of three vertical-cavity surface-emitting laser (VCSEL) structures incorporating nano structures are rigorously investigated. Nano structuring enables to deliver selective pumping or loss to the fundamental mode as well as stabilizing the output polarization state. Comparison of three vectorial simulation methods reveals that the modal expansion method is suitable for treating the nano structured VCSEL designs.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126954537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3-dimensional current flow analysis in InGaN light emitting diodes grown on sapphire substrate 蓝宝石衬底InGaN发光二极管的三维电流分析
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297198
J. Shim
{"title":"3-dimensional current flow analysis in InGaN light emitting diodes grown on sapphire substrate","authors":"J. Shim","doi":"10.1109/NUSOD.2009.5297198","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297198","url":null,"abstract":"In order to analyze current spreading 3-dimensionally in an InGaN/GaN multiple quantum well (MQW) light emitting diode (LED), we successfully developed a method of modeling a LED as an electrical circuit consisting of resistances and intrinsic diodes. The main advantage of this method is its simple algorithm and fast calculation time.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125681006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical investigation of fast dynamic response of organic light-emitting diodes 有机发光二极管快速动态响应的数值研究
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297231
Jongwoon Park, Yeounchan Yim, Giseok Heo, Taewon Kim, Gwangyoung Kim, Seoung-Hwan Park
{"title":"Numerical investigation of fast dynamic response of organic light-emitting diodes","authors":"Jongwoon Park, Yeounchan Yim, Giseok Heo, Taewon Kim, Gwangyoung Kim, Seoung-Hwan Park","doi":"10.1109/NUSOD.2009.5297231","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297231","url":null,"abstract":"We make a numerical investigation of transient responses of organic light-emitting diodes (OLEDs) to various device and material parameters such as the device length, carrier mobility, energy level offset, exciton lifetime, barrier height, and recombination rate. We have found that the delay time is mainly determined by the device length and bias voltage, whereas the rise time depends on the electron mobility and recombination rate. This study may provide design guidelines of OLEDs for applications in high-speed visible light communications (VLC).","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117223221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal analysis of high-performance mid-infrared quantum cascade lasers 高性能中红外量子级联激光器的热分析
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297207
H. K. Lee, J. S. Yu
{"title":"Thermal analysis of high-performance mid-infrared quantum cascade lasers","authors":"H. K. Lee, J. S. Yu","doi":"10.1109/NUSOD.2009.5297207","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297207","url":null,"abstract":"We investigated theoretically the thermal characteristics of quantum cascade lasers (QCLs) based on InGaAs/AlInAs/InP materials operating at λ ~ 4.6 μm. By using a steady-state two dimensional (2D) heat dissipation model, the maximum internal temperature, heat flow pattern, and thermal conductance were obtained for the different device geometries with epilayer-up and down bonding scheme. As the heatsink temperature increases, the maximum internal temperature increases. For 10 μm × 4 mm epilayer-down bonded laser with diamond submount and InP waveguide, a high thermal conductance of Gth = 619.7 W/K-cm2 at room temperature was obtained.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127745271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical simulation of charge transfer in SrS:Ce AC thin-film electroluminescent devices SrS:Ce交流薄膜电致发光器件中电荷转移的数值模拟
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297237
S. Tiwari, S. Tiwari
{"title":"Numerical simulation of charge transfer in SrS:Ce AC thin-film electroluminescent devices","authors":"S. Tiwari, S. Tiwari","doi":"10.1109/NUSOD.2009.5297237","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297237","url":null,"abstract":"A simple model which includes HSPICE Fowler-Nordheim diode for the creation of external charge in blue emitting SrS:Ce ACTFEL display device is presented.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126142982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-dimensional time-dynamic simulations of DFB lasers and MOPAs DFB激光器和MOPAs的二维时间动力学仿真
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297220
B. Heubeck, C. Pflaum
{"title":"Two-dimensional time-dynamic simulations of DFB lasers and MOPAs","authors":"B. Heubeck, C. Pflaum","doi":"10.1109/NUSOD.2009.5297220","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297220","url":null,"abstract":"Due to the lateral structure of Distributed Feedback lasers (DFB) and Master Oscillator Power Amplifiers (MOPAs), the one-dimensional classical Transfer Matrix Method (TMM) as well as similar one-dimensional methods do not lead to satisfactory simulation results. Therefore, we present a two-dimensional simulation technique based on Trigonometric Finite Wave Elements (TFWE) — a generalization of the TMM in two or three dimensions — that solves the time-dependent wave equation. By coupling the wave equation with a temperature and a drift-diffusion model, we can simulate the time-dynamic behavior of DFB lasers and MOPAs. Furthermore, by Fourier transformation, we can investigate which modes and which frequencies appear. In this way, the influence of the injected current and of the stripe width on the resulting modes and on the output power can be analyzed in detail.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128453635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implementation of light activated opening switch in Silvaco 光激活开关在Silvaco中的实现
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297234
M. Shafiei, B. Davaji
{"title":"Implementation of light activated opening switch in Silvaco","authors":"M. Shafiei, B. Davaji","doi":"10.1109/NUSOD.2009.5297234","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297234","url":null,"abstract":"In this paper we are going to implement a bulk silicon material as a light activated opening switch and obtain the characteristics and relations of different parameters of a light activated opening switch by simulation in Silvaco software.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124047439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parabolic pulse characterization in the far field of dispersion in a passive nonlinear fiber 无源非线性光纤中远场色散的抛物脉冲特性
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297236
S. Iakushev, I. Sukhoivanov, O. Shulika, V. Lysak
{"title":"Parabolic pulse characterization in the far field of dispersion in a passive nonlinear fiber","authors":"S. Iakushev, I. Sukhoivanov, O. Shulika, V. Lysak","doi":"10.1109/NUSOD.2009.5297236","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297236","url":null,"abstract":"We investigated properties of ultrashort parabolic pulses formed in the far field of dispersion in a passive nonlinear fiber through numerical modeling. It is found that the shape of pulses in the far field of dispersion differs from parabolic one, as compared to the near field of dispersion. However their temporal and spectral intensity shapes are more stable over the fiber.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117209478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation of antireflective subwavelength grating structures for optical device applications 用于光学器件的抗反射亚波长光栅结构的仿真
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297202
Y. M. Song, Y. T. Lee
{"title":"Simulation of antireflective subwavelength grating structures for optical device applications","authors":"Y. M. Song, Y. T. Lee","doi":"10.1109/NUSOD.2009.5297202","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297202","url":null,"abstract":"Diffraction efficiencies of three different types of subwavelength grating (SWG) structures were simulated for optoelectronic device applications using rigorous coupled wave analysis method. The effect of height and period of SWG structures on the reflectance were investigated. Also, the internal and external reflection from the SWG structures were simulated and analyzed.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121437837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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