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2009 9th International Conference on Numerical Simulation of Optoelectronic Devices最新文献

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2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2022-09-07 DOI: 10.1109/hpsr.2005.1503180
{"title":"Copyright page","authors":"","doi":"10.1109/hpsr.2005.1503180","DOIUrl":"https://doi.org/10.1109/hpsr.2005.1503180","url":null,"abstract":"Note: IEEE reserves the right to exclude a paper from IEEE Xplore if the paper is not presented at the conference.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131151349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dark current simulation of GaN/AlGaN p-i-n avalanche photodiode GaN/AlGaN p-i-n雪崩光电二极管的暗电流模拟
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297215
Z. Cao, W. D. Hu, X. Chen, W. Lu, L. Wang, X. Y. Li
{"title":"Dark current simulation of GaN/AlGaN p-i-n avalanche photodiode","authors":"Z. Cao, W. D. Hu, X. Chen, W. Lu, L. Wang, X. Y. Li","doi":"10.1109/NUSOD.2009.5297215","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297215","url":null,"abstract":"We report on 2D simulations of dark current for GaN/GaN/Al0.33Ga0.67N p-i-n photodiode. The simulated result is in good agreement with experiment data indicating that avalanche multiplication is the cause of breakdown and band-to-band tunneling is the main source of dark current before breakdown. Effects of interface charge on avalanche current are investigated in detail.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125979666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Calculation of light delay by FDTD technique and Padé approximation 用时域有限差分技术和帕德罗近似计算光延迟
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297204
Yongzhen Huang, Yuede Yang
{"title":"Calculation of light delay by FDTD technique and Padé approximation","authors":"Yongzhen Huang, Yuede Yang","doi":"10.1109/NUSOD.2009.5297204","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297204","url":null,"abstract":"The time delay for light transmission in a coupled microring waveguide structure is calculated from the phase shift of the transmission coefficient obtained by Padé approximation with Baker's algorithm from FDTD Output. The results show that the Padé approximation is a powerful tool for saving time in FDTD simulation.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132488143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-consistent design of strain-compensated InGaAs/InAlAs quantum cascade laser structures: Towards short wavelengths 应变补偿InGaAs/InAlAs量子级联激光器结构的自洽设计:短波方向
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297246
Y. Ko, J. S. Yu, K. Chung
{"title":"Self-consistent design of strain-compensated InGaAs/InAlAs quantum cascade laser structures: Towards short wavelengths","authors":"Y. Ko, J. S. Yu, K. Chung","doi":"10.1109/NUSOD.2009.5297246","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297246","url":null,"abstract":"We designed In<inf>x</inf>Ga<inf>1−x</inf>As/InyAl<inf>1−y</inf>As quantum cascade laser (QCL) structures, based on the four-quantum well active region operating at λ ~ 2.8−3.3 μm in terms of an objective function, i.e., zg<inf>L</inf>(l − t<inf>l</inf>/t<inf>ul</inf>)tu, related to the optical gain, including dipole matrix element (z<inf>UL</inf>) and population inversion between electron transitions. For shorter wavelength emission, the higher conduction band discontinuity (ΔE<inf>C</inf>) was achieved by changing the In mole fraction of In<inf>x</inf>Ga<inf>1−x</inf>As/InyAl<inf>1−y</inf>As strain-compensated layers. The use of strain-compensated In<inf>0</inf>.7<inf>2</inf>Ga<inf>0</inf>.<inf>28</inf>As/In<inf>0</inf>.3Al<inf>0</inf>.<inf>7</inf>As pair (i.e, ΔE<inf>C</inf> = 857 meV) leads to the shortest wavelength up to λ ~ 2.84 μm with τ<inf>43</inf> = 3.96 ps, τ<inf>4</inf> = 1.21 ps, τ<inf>3</inf> = 0.55 ps and z<inf>43</inf> = 0.57 nm under an electric field of 94 kV/cm.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124407795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Si3N4 / SiO2 passivation layer on InP for optimization of the 1.55μm MQW FP laser performance InP上Si3N4 / SiO2钝化层对1.55μm MQW FP激光器性能的优化
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297208
C. Tan, S. Jang, Y. Lee
{"title":"Si3N4 / SiO2 passivation layer on InP for optimization of the 1.55μm MQW FP laser performance","authors":"C. Tan, S. Jang, Y. Lee","doi":"10.1109/NUSOD.2009.5297208","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297208","url":null,"abstract":"The importance of the passivation in semiconductor surfaces as chemical passivation, electrical passivation and leakage current blockage is studied. Simulation of the multiple quantum well Fabry-Perot laser diode with passivation layer is done by making the assumption that the passivation interface has an ideal surface condition. The simulation model included the heat flow condition in the passivation interface. The simulation results are in good agreement with experiment. Threshold current as low as 21mA is achieved with 1.8um Si3N4 passivation layer. It is found that Si3N4 passivation layer improve the laser diode performance compare to SiO2 passivation. Thicker passivation help in prevention of the leakage current.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"1988 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125486796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modeling of Transistor Laser Optical Amplifiers under steady state and transient conditions 稳态和瞬态条件下晶体管激光光放大器的建模
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297224
R. Basu, A. Das Barman, P. K. Basu
{"title":"Modeling of Transistor Laser Optical Amplifiers under steady state and transient conditions","authors":"R. Basu, A. Das Barman, P. K. Basu","doi":"10.1109/NUSOD.2009.5297224","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297224","url":null,"abstract":"We have explored the possibility of using Transistor Laser as an Optical Amplifier in addition to its normal function as an electronic amplifier. The steady state gain is calculated by assuming different InGaAs Quantum Well thickness within the GaAs base of fixed width thereby changing the capture rate and confinement factor. Clear gin saturation effect is exhibited. Using ODE solver, the gain saturation as a function of time is demonstrated. The linewidth enhancement factor of the amplifier is also evaluated.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121334034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of quantum cascade lasers using Robin boundary conditions 利用Robin边界条件模拟量子级联激光器
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297217
G. Milovanović, O. Baumgartner, H. Kosina
{"title":"Simulation of quantum cascade lasers using Robin boundary conditions","authors":"G. Milovanović, O. Baumgartner, H. Kosina","doi":"10.1109/NUSOD.2009.5297217","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297217","url":null,"abstract":"We present a study on tunneling current density and an investigation of the optical gain of GaAs/AlxGa1−xAs quantum cascade lasers. Current carrying states are obtained by taking into account Robin boundary conditions. Our simulation results show that this approach gives a very good agreement with other calculations using the Tsu-Esaki model and with simulations based on nonequilibrium Green's functions. Furthermore, by incorporating this method into optical gain calculations we establish good agreement with experimental results.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125232790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical analysis of mushroom-type traveling wave electroabsorption modulatorsusing full-vectorial finite difference method 蘑菇型行波电吸收调制器的全矢量有限差分光学分析
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297233
K. Abedi, V. Ahmadi, M. Moravvej-Farshi, M. Razaghi
{"title":"Optical analysis of mushroom-type traveling wave electroabsorption modulatorsusing full-vectorial finite difference method","authors":"K. Abedi, V. Ahmadi, M. Moravvej-Farshi, M. Razaghi","doi":"10.1109/NUSOD.2009.5297233","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297233","url":null,"abstract":"Larger width of P-cladding layer in p-i-n waveguide of traveling wave electroabsorption modulator (TWEAM) results in lower resistance and microwave propagation loss which provides an enhanced high speed electro-optical response. In this paper, a full-vectorial finite-difference-based optical mode solver is presented to analyze mushroom-type TWEAM. The important parameters in the high-frequency TWEAM design such as optical effective index and transverse mode confinement factor are calculated. The modulation response of mushroom-type TWEAM is calculated by considering interaction between microwave and optical fields in waveguide and compared with conventional ridge-type TWEAM. The calculated 3dB bandwidths for ridge-type and mushroom-type TWEAM are about 139 GHz and 166 GHz for 200 μm and 114 GHz and 126 GHz for 300 μm waveguide length, respectively.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"355 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122922922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical clock sources based on two-section distributed feedback laser with shift-layer 基于移位层两段分布反馈激光器的光时钟源
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297221
Jer-Shien Chen, H. Kung
{"title":"Optical clock sources based on two-section distributed feedback laser with shift-layer","authors":"Jer-Shien Chen, H. Kung","doi":"10.1109/NUSOD.2009.5297221","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297221","url":null,"abstract":"We propose a numerical model to estimate the self-sustained pulsation frequency, matched to the measured pulsation frequency, which considers the structure factors in a two-section distributed feedback laser with a thin shift-layer.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128546231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimum design of InGaP/GaAs dual-junction solar cells InGaP/GaAs双结太阳能电池的优化设计
2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI: 10.1109/NUSOD.2009.5297212
J. W. Leem, J. S. Yu, Y. T. Lee
{"title":"Optimum design of InGaP/GaAs dual-junction solar cells","authors":"J. W. Leem, J. S. Yu, Y. T. Lee","doi":"10.1109/NUSOD.2009.5297212","DOIUrl":"https://doi.org/10.1109/NUSOD.2009.5297212","url":null,"abstract":"We designed the InGaP/GaAs dual-junction solar cells by optimizing short-circuit current matching between top and bottom cells using a Silvaco ATLAS. The relatively thick base layer of top cell exhibited a larger short-circuit current density (J<inf>sc</inf>) while the thicker base layer of bottom cell allowed for a smaller J<inf>sc</inf>. A maximum J<inf>sc</inf> of 11.86 mA/cm<sup>2</sup>was obtained, leading to the increased conversion efficiency. The base thicknesses of top InGaP and bottom GaAs cells were optimized at 650 nm and 2 μm, respectively. For the optimized solar cell structure, the J<inf>sc</inf> = 11.86 mA/cm<sup>2</sup>, V<inf>oc</inf> = 2.32 V, and fill factor = 88.42% were obtained under AM0 illumination, exhibiting a conversion efficiency of 24.27%. The effect of tunnel diode structure, i.e, GaAs, AlGaAs, and InGaP, on the characteristics of solar cells was investigated.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133401561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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