{"title":"InGaP/GaAs双结太阳能电池的优化设计","authors":"J. W. Leem, J. S. Yu, Y. T. Lee","doi":"10.1109/NUSOD.2009.5297212","DOIUrl":null,"url":null,"abstract":"We designed the InGaP/GaAs dual-junction solar cells by optimizing short-circuit current matching between top and bottom cells using a Silvaco ATLAS. The relatively thick base layer of top cell exhibited a larger short-circuit current density (J<inf>sc</inf>) while the thicker base layer of bottom cell allowed for a smaller J<inf>sc</inf>. A maximum J<inf>sc</inf> of 11.86 mA/cm<sup>2</sup>was obtained, leading to the increased conversion efficiency. The base thicknesses of top InGaP and bottom GaAs cells were optimized at 650 nm and 2 μm, respectively. For the optimized solar cell structure, the J<inf>sc</inf> = 11.86 mA/cm<sup>2</sup>, V<inf>oc</inf> = 2.32 V, and fill factor = 88.42% were obtained under AM0 illumination, exhibiting a conversion efficiency of 24.27%. The effect of tunnel diode structure, i.e, GaAs, AlGaAs, and InGaP, on the characteristics of solar cells was investigated.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optimum design of InGaP/GaAs dual-junction solar cells\",\"authors\":\"J. W. Leem, J. S. Yu, Y. T. Lee\",\"doi\":\"10.1109/NUSOD.2009.5297212\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We designed the InGaP/GaAs dual-junction solar cells by optimizing short-circuit current matching between top and bottom cells using a Silvaco ATLAS. The relatively thick base layer of top cell exhibited a larger short-circuit current density (J<inf>sc</inf>) while the thicker base layer of bottom cell allowed for a smaller J<inf>sc</inf>. A maximum J<inf>sc</inf> of 11.86 mA/cm<sup>2</sup>was obtained, leading to the increased conversion efficiency. The base thicknesses of top InGaP and bottom GaAs cells were optimized at 650 nm and 2 μm, respectively. For the optimized solar cell structure, the J<inf>sc</inf> = 11.86 mA/cm<sup>2</sup>, V<inf>oc</inf> = 2.32 V, and fill factor = 88.42% were obtained under AM0 illumination, exhibiting a conversion efficiency of 24.27%. The effect of tunnel diode structure, i.e, GaAs, AlGaAs, and InGaP, on the characteristics of solar cells was investigated.\",\"PeriodicalId\":120796,\"journal\":{\"name\":\"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2009.5297212\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2009.5297212","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimum design of InGaP/GaAs dual-junction solar cells
We designed the InGaP/GaAs dual-junction solar cells by optimizing short-circuit current matching between top and bottom cells using a Silvaco ATLAS. The relatively thick base layer of top cell exhibited a larger short-circuit current density (Jsc) while the thicker base layer of bottom cell allowed for a smaller Jsc. A maximum Jsc of 11.86 mA/cm2was obtained, leading to the increased conversion efficiency. The base thicknesses of top InGaP and bottom GaAs cells were optimized at 650 nm and 2 μm, respectively. For the optimized solar cell structure, the Jsc = 11.86 mA/cm2, Voc = 2.32 V, and fill factor = 88.42% were obtained under AM0 illumination, exhibiting a conversion efficiency of 24.27%. The effect of tunnel diode structure, i.e, GaAs, AlGaAs, and InGaP, on the characteristics of solar cells was investigated.
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