Dark current simulation of GaN/AlGaN p-i-n avalanche photodiode

Abstract

We report on 2D simulations of dark current for GaN/GaN/Al0.33Ga0.67N p-i-n photodiode. The simulated result is in good agreement with experiment data indicating that avalanche multiplication is the cause of breakdown and band-to-band tunneling is the main source of dark current before breakdown. Effects of interface charge on avalanche current are investigated in detail.