GaN/AlGaN p-i-n雪崩光电二极管的暗电流模拟

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI:10.1109/NUSOD.2009.5297215

Z. Cao, W. D. Hu, X. Chen, W. Lu, L. Wang, X. Y. Li

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引用次数: 1

摘要

本文报道了GaN/GaN/Al0.33Ga0.67N p-i-n光电二极管暗电流的二维模拟。模拟结果与实验数据吻合较好，表明雪崩倍增是击穿的原因，带间隧穿是击穿前暗电流的主要来源。详细研究了界面电荷对雪崩电流的影响。

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Dark current simulation of GaN/AlGaN p-i-n avalanche photodiode

We report on 2D simulations of dark current for GaN/GaN/Al0.33Ga0.67N p-i-n photodiode. The simulated result is in good agreement with experiment data indicating that avalanche multiplication is the cause of breakdown and band-to-band tunneling is the main source of dark current before breakdown. Effects of interface charge on avalanche current are investigated in detail.

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2009 9th International Conference on Numerical Simulation of Optoelectronic Devices

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