蓝宝石衬底InGaN发光二极管的三维电流分析

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI:10.1109/NUSOD.2009.5297198

J. Shim

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引用次数: 0

摘要

为了三维分析InGaN/GaN多量子阱(MQW)发光二极管(LED)中的电流扩散，我们成功地开发了一种将LED建模为由电阻和本禀二极管组成的电路的方法。该方法的主要优点是算法简单，计算时间短。

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3-dimensional current flow analysis in InGaN light emitting diodes grown on sapphire substrate

In order to analyze current spreading 3-dimensionally in an InGaN/GaN multiple quantum well (MQW) light emitting diode (LED), we successfully developed a method of modeling a LED as an electrical circuit consisting of resistances and intrinsic diodes. The main advantage of this method is its simple algorithm and fast calculation time.

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来源期刊

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices

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