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1981 IEEE MTT-S International Microwave Symposium Digest最新文献

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Two-Dimensional Analysis for Stripline/Microstrip Circuits 带状/微带电路的二维分析
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129977
K. Gupta, R. Chadha, P.C. Sharma
{"title":"Two-Dimensional Analysis for Stripline/Microstrip Circuits","authors":"K. Gupta, R. Chadha, P.C. Sharma","doi":"10.1109/MWSYM.1981.1129977","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129977","url":null,"abstract":"This paper discusses two aspects of two-dimensional circuits at microwave frequencies. First part is intended to emphasize that 2-dimensional planar circuit approach may be used to analyze and optimize stripline circuits. The second part describes a new method called 'desegmentation' which extends the applicability of Green's functions technique for planar circuits.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124890326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Problems in Microstrip Filter Design 微带滤波器设计中的若干问题
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129869
R. Wenzel, W. G. Erlinger
{"title":"Problems in Microstrip Filter Design","authors":"R. Wenzel, W. G. Erlinger","doi":"10.1109/MWSYM.1981.1129869","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129869","url":null,"abstract":"Accurate microstrip filter design is complicated by the presence of parasitic elements, physical constraints, and the inhomogeneous nature of the medium. This paper describes the design problem, surveys commonly used design methods, and shows typical errors obained using these design approaches. A computer-aided design procedure is then described that yields precise bandwidth with exact equal ripple passband response.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124713768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A W-Band, Coherent, Pulse-Compression Radar Transceiver Using Linear Frequency Modulation 使用线性调频的w波段相干脉冲压缩雷达收发器
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129945
T. Kihm, M. Beebe, C. Brenneise, R. D. Weglein
{"title":"A W-Band, Coherent, Pulse-Compression Radar Transceiver Using Linear Frequency Modulation","authors":"T. Kihm, M. Beebe, C. Brenneise, R. D. Weglein","doi":"10.1109/MWSYM.1981.1129945","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129945","url":null,"abstract":"A W-Band, solid state, coherent pulse-compression radar transceiver is described that has demonstrated 0.6m range resolution and 25 Hz doppler resolution. Passive pulse expansion and compression was implemented using two nearly identical microwave SAW filters with 0.47 GHz dispersive bandwidth and a time-bandwidth product of 220. Range (time) sidelobes of -18 dB were obtained in preliminary tests by taking advantage of the natural frequency-time slope inherent in the 94 GHz IMPATT oscillator with peak output power of +25 dBm.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122017828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An Interactive Optimal Postproduction Tuning Technique Utilizing Simulated Sensitivities and Response Measurements 利用模拟灵敏度和响应测量的交互式优化后期调整技术
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129821
J. Bandler, Mohamed Rizk, A. Salama
{"title":"An Interactive Optimal Postproduction Tuning Technique Utilizing Simulated Sensitivities and Response Measurements","authors":"J. Bandler, Mohamed Rizk, A. Salama","doi":"10.1109/MWSYM.1981.1129821","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129821","url":null,"abstract":"An interactive postproduction tuning technique is presented. The technique uses linear programming iteratively for estimating necessary tuning amounts. It is completely general and is applicable to reversible and irreversible tuning processes. By eliminating completely the common trial and error approach it optimally exploits network response measurements.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126733587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Low Noise Solid State Amplifier for Replacement of a Ka-Band TWTA 替代ka波段TWTA的低噪声固态放大器
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129954
P. Wolfert, J. D. Crowley, F. B. Fank
{"title":"A Low Noise Solid State Amplifier for Replacement of a Ka-Band TWTA","authors":"P. Wolfert, J. D. Crowley, F. B. Fank","doi":"10.1109/MWSYM.1981.1129954","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129954","url":null,"abstract":"A low noise solid state amplifier for replacement of a Ka-band TWTA is described. Eight stages of amplification, which utilize cathode notch InP Gunn diodes, provide a gain of 37 /spl plusmn/ 3 dB with an associated N. F. ranging from 13.3 to 16.3 dB in the 27-39.5 GHz band.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125651080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wave Propagation in Inhomogeneous Anisotropic Rectangular Waveguides by the Effective Index Method 用有效折射率法研究非均匀各向异性矩形波导中的波传播
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129975
M. Armenise, M. De Sario
{"title":"Wave Propagation in Inhomogeneous Anisotropic Rectangular Waveguides by the Effective Index Method","authors":"M. Armenise, M. De Sario","doi":"10.1109/MWSYM.1981.1129975","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129975","url":null,"abstract":"Hybrid mode dispersion and mapping of multilayer rectangular diffused birifrangent waveguides are studied by the effective index method for two orientations, horizontal and vertical, of the crystal optic axis. At first the structure is examined in the approximate lossless approach, then the perturbation technique allows us to evaluate the extinction coefficient value to employ as starting point in the direct search optimization strategy for determining the complex propagation constant for the exact solution. The guided E/sup x//sub 11/ and E/sup y//sub 11/ modes exhibit almost the same cutoff wavelength and their dispersion curves little differ from the ones of corresponding TM/sub 0/, up to 1 mu m for vertical optic axis because of the surface plasma waves, and TE/sub 0/ modes of the slab waveguide without and with the metal film respectively.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129187032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of Balanced Subharmonically Pumped Mixers with Unsymmetrical Diodes 非对称二极管平衡次谐波抽运混频器的分析
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129960
R. Hicks, P. Khan
{"title":"Analysis of Balanced Subharmonically Pumped Mixers with Unsymmetrical Diodes","authors":"R. Hicks, P. Khan","doi":"10.1109/MWSYM.1981.1129960","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129960","url":null,"abstract":"A numerical analysis technique is applied to subharmonically pumped balanced mixer circuits where the two diodes differ from each other. Results indicate that a slight imbalance between the diodes has a pronounced effect on mixer performance.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125494482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Silicon-On-Sapphire (SOS) Monolithic Transceiver Module Components for L- and S-Band 用于L波段和s波段的蓝宝石上硅(SOS)单片收发模块组件
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129812
D. Laighton, J. Sasonoff, J. Selin
{"title":"Silicon-On-Sapphire (SOS) Monolithic Transceiver Module Components for L- and S-Band","authors":"D. Laighton, J. Sasonoff, J. Selin","doi":"10.1109/MWSYM.1981.1129812","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129812","url":null,"abstract":"Phase-shifter and power amplifier functional sub-assemblies have been built using monolithic circuit techniques. Silicon-on-sapphire (S0S) material is used with active devices made directly in the silicon epi layer, with lumped thin-film components used as passive elements.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131565078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
K-Band Power GaAs FETS k波段功率GaAs fet
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129809
L. Rosenheck, D. Herstein, I. Drukier
{"title":"K-Band Power GaAs FETS","authors":"L. Rosenheck, D. Herstein, I. Drukier","doi":"10.1109/MWSYM.1981.1129809","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129809","url":null,"abstract":"This paper will report on the structure and performance of GaAs FETs developed for K-band applications. A power output of 27dBm was obtained with 5dB gain at 21GHz. A novel low loss waveguide to microstrip transition was used in the measurement. Its design will be described.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131674848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical Tuning in GaAs MESFET Oscillators GaAs MESFET振荡器的光学调谐
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129813
H.J. Sun, R. Gutmann, J. Borrego
{"title":"Optical Tuning in GaAs MESFET Oscillators","authors":"H.J. Sun, R. Gutmann, J. Borrego","doi":"10.1109/MWSYM.1981.1129813","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129813","url":null,"abstract":"Optical tuning in GaAs MESFET oscillators indicate that the tuning range is an order of magnitude greater in common-source and common-gate mode oscillators compared to common-drain mode circuits. Tuning ranges of 2 to 3% at C and X band have been demonstrated with an incandescent source illumination intensity of approximately 1mW/mm/sup2/. The optical tuning sensitivity is attributed to C/sub gs/ variations with light, resulting from an increase in the effective space charge density in the gate depletion layer (attributed to hole trapping). Analysis of the oscillator starting condition for the three oscillator circuits is in qualitative agreement with the measured frequency sensitivity, using C/sub gs/ variations with light measured at 1MHz.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132885385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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