{"title":"替代ka波段TWTA的低噪声固态放大器","authors":"P. Wolfert, J. D. Crowley, F. B. Fank","doi":"10.1109/MWSYM.1981.1129954","DOIUrl":null,"url":null,"abstract":"A low noise solid state amplifier for replacement of a Ka-band TWTA is described. Eight stages of amplification, which utilize cathode notch InP Gunn diodes, provide a gain of 37 /spl plusmn/ 3 dB with an associated N. F. ranging from 13.3 to 16.3 dB in the 27-39.5 GHz band.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Low Noise Solid State Amplifier for Replacement of a Ka-Band TWTA\",\"authors\":\"P. Wolfert, J. D. Crowley, F. B. Fank\",\"doi\":\"10.1109/MWSYM.1981.1129954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low noise solid state amplifier for replacement of a Ka-band TWTA is described. Eight stages of amplification, which utilize cathode notch InP Gunn diodes, provide a gain of 37 /spl plusmn/ 3 dB with an associated N. F. ranging from 13.3 to 16.3 dB in the 27-39.5 GHz band.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129954\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Low Noise Solid State Amplifier for Replacement of a Ka-Band TWTA
A low noise solid state amplifier for replacement of a Ka-band TWTA is described. Eight stages of amplification, which utilize cathode notch InP Gunn diodes, provide a gain of 37 /spl plusmn/ 3 dB with an associated N. F. ranging from 13.3 to 16.3 dB in the 27-39.5 GHz band.