{"title":"用于L波段和s波段的蓝宝石上硅(SOS)单片收发模块组件","authors":"D. Laighton, J. Sasonoff, J. Selin","doi":"10.1109/MWSYM.1981.1129812","DOIUrl":null,"url":null,"abstract":"Phase-shifter and power amplifier functional sub-assemblies have been built using monolithic circuit techniques. Silicon-on-sapphire (S0S) material is used with active devices made directly in the silicon epi layer, with lumped thin-film components used as passive elements.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Silicon-On-Sapphire (SOS) Monolithic Transceiver Module Components for L- and S-Band\",\"authors\":\"D. Laighton, J. Sasonoff, J. Selin\",\"doi\":\"10.1109/MWSYM.1981.1129812\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Phase-shifter and power amplifier functional sub-assemblies have been built using monolithic circuit techniques. Silicon-on-sapphire (S0S) material is used with active devices made directly in the silicon epi layer, with lumped thin-film components used as passive elements.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129812\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129812","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon-On-Sapphire (SOS) Monolithic Transceiver Module Components for L- and S-Band
Phase-shifter and power amplifier functional sub-assemblies have been built using monolithic circuit techniques. Silicon-on-sapphire (S0S) material is used with active devices made directly in the silicon epi layer, with lumped thin-film components used as passive elements.
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