{"title":"k波段功率GaAs fet","authors":"L. Rosenheck, D. Herstein, I. Drukier","doi":"10.1109/MWSYM.1981.1129809","DOIUrl":null,"url":null,"abstract":"This paper will report on the structure and performance of GaAs FETs developed for K-band applications. A power output of 27dBm was obtained with 5dB gain at 21GHz. A novel low loss waveguide to microstrip transition was used in the measurement. Its design will be described.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"K-Band Power GaAs FETS\",\"authors\":\"L. Rosenheck, D. Herstein, I. Drukier\",\"doi\":\"10.1109/MWSYM.1981.1129809\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper will report on the structure and performance of GaAs FETs developed for K-band applications. A power output of 27dBm was obtained with 5dB gain at 21GHz. A novel low loss waveguide to microstrip transition was used in the measurement. Its design will be described.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129809\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129809","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper will report on the structure and performance of GaAs FETs developed for K-band applications. A power output of 27dBm was obtained with 5dB gain at 21GHz. A novel low loss waveguide to microstrip transition was used in the measurement. Its design will be described.
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