ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design最新文献_第3页

Modeling and Analysis of Leakage Induced Damping Effect in Low Voltage LSIs 低压lsi泄漏阻尼效应建模与分析

ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design Pub Date : 2006-10-04 DOI: 10.1145/1165573.1165668

Jie Gu, J. Keane, C. Kim

引用次数: 2

Substituting Associative Load Queue with Simple Hash Tables in Out-of-Order Microprocessors 乱序微处理器中用简单哈希表替代关联加载队列

ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design Pub Date : 2006-10-04 DOI: 10.1145/1165573.1165637

Alok Garg, Fernando Castro, Michael C. Huang, D. Chaver, L. Piñuel, M. Prieto

引用次数: 10

Energy Optimality and Variability in Subthreshold Design 亚阈值设计中的能量最优性和可变性

ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design Pub Date : 2006-10-04 DOI: 10.1145/1165573.1165660

S. Hanson, Bo Zhai, D. Blaauw, D. Sylvester, A. Bryant, Xinlin Wang

引用次数: 51

A New Mismatch-Dependent Low Power Technique with Shadow Match-Line Voltage-Detecting Scheme for CAMs 基于阴影匹配线电压检测的凸轮失匹配低功耗检测技术

ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design Pub Date : 2006-10-04 DOI: 10.1145/1165573.1165605

Jianwei Zhang, Y. Ye, Bin-Da Liu

引用次数: 8

Low Power Light-weight Embedded Systems 低功耗轻量级嵌入式系统

ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design Pub Date : 2006-10-04 DOI: 10.1145/1165573.1165623

M. Sarrafzadeh, F. Dabiri, R. Jafari, T. Massey, A. Nahapetian

引用次数: 20

Process Variation Aware Cache Leakage Management 进程变化感知缓存泄漏管理

ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design Pub Date : 2006-10-04 DOI: 10.1145/1165573.1165636

Ke Meng, R. Joseph

引用次数: 76

Power Reduction in an H.264 Encoder Through Algorithmic and Logic Transformations 通过算法和逻辑转换降低H.264编码器的功耗

ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design Pub Date : 2006-10-04 DOI: 10.1145/1165573.1165598

M. Koziri, G. Stamoulis, I. Katsavounidis

引用次数: 6

Selective Writeback: Exploiting Transient Values for Energy-Efficiency and Performance 选择性回写:利用瞬态值提高能源效率和性能

ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design Pub Date : 2006-10-04 DOI: 10.1145/1165573.1165584

D. Balkan, J. Sharkey, D. Ponomarev, K. Ghose

{"title":"Selective Writeback: Exploiting Transient Values for Energy-Efficiency and Performance","authors":"D. Balkan, J. Sharkey, D. Ponomarev, K. Ghose","doi":"10.1145/1165573.1165584","DOIUrl":"https://doi.org/10.1145/1165573.1165584","url":null,"abstract":"Today's superscalar microprocessors use large, heavily-ported physical register files (RFs) to increase the instruction throughput. The high complexity and power dissipation of such RFs mainly stem from the need to maintain each and every result for a large number of cycles after the result generation. We observed that a significant fraction (about 45%) of the result values are delivered to their consumers via the bypass network (consumed \"on-the-fly\") and are never read out from the destination registers. In this paper, we first formulate conditions for identifying such transient values and describe their microarchitectural implementation; then we propose a technique to avoid the writeback of such transient values into the RF. With 64-entry integer and floating point register files, our technique achieves an 11% performance improvement and 29% reduction in the RF energy consumption compared to the baseline machine with the same number of registers. Furthermore, for the same performance target, the selective writeback scheme results in a 38% reduction in the energy consumption of the RF compared to the baseline machine","PeriodicalId":119229,"journal":{"name":"ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126133933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A Pulsed Low-Voltage Swing Latch for Reduced Power Dissipation in High-Frequency Microprocessors 用于降低高频微处理器功耗的脉冲低压摆锁存器

ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design Pub Date : 2006-10-04 DOI: 10.1145/1165573.1165593

P. Lu, N. Cao, L. Sigal, P. Woltgens, R. Robertazzi, D. Heidel

引用次数: 1

Energy/Power Breakdown of Pipelined Nanometer Caches (90nm/65nm/45nm/32nm) 流水线纳米缓存(90nm/65nm/45nm/32nm)的能量/功率分解

ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design Pub Date : 2006-10-04 DOI: 10.1145/1165573.1165581

Samuel Rodríguez, B. Jacob

{"title":"Energy/Power Breakdown of Pipelined Nanometer Caches (90nm/65nm/45nm/32nm)","authors":"Samuel Rodríguez, B. Jacob","doi":"10.1145/1165573.1165581","DOIUrl":"https://doi.org/10.1145/1165573.1165581","url":null,"abstract":"As transistors continue to scale down into the nanometer regime, device leakage currents are becoming the dominant cause of power dissipation in nanometer caches, making it essential to model these leakage effects properly. Moreover, typical microprocessor caches are pipelined to keep up with the speed of the processor, and the effects of pipelining overhead need to be properly accounted for. In this paper, we present a detailed study of pipelined nanometer caches with detailed energy/power dissipation breakdowns showing where and how the power is dissipated within a nanometer cache. We explore a three-dimensional pipelined cache design space that includes cache size (16kB to 512kB), cache associativity (direct-mapped to 16-way) and process technology (90nm, 65nm, 45nm and 32nm). Among our findings, we show that cache bitline leakage is increasingly becoming the dominant cause of power dissipation in nanometer technology nodes. We show that subthreshold leakage is the main cause of static power dissipation, and that gate leakage is, surprisingly, not a significant contributor to total cache power, even for 32nm caches. We also show that accounting for cache pipelining overhead is necessary, as power dissipated by the pipeline elements is a significant part of cache power","PeriodicalId":119229,"journal":{"name":"ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124666362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 71