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2009 IEEE International Conference on Indium Phosphide & Related Materials最新文献

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High performance InP HEMT technology with multiple interconnect layers for advanced RF and mixed signal circuits 高性能InP HEMT技术，具有多个互连层，适用于先进的射频和混合信号电路
2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI: 10.1109/ICIPRM.2009.5012455
W. Ha, K. Shinohara, Z. Griffith, M. Urteaga, P. Chen, P. Rowell, B. Brar
{"title":"High performance InP HEMT technology with multiple interconnect layers for advanced RF and mixed signal circuits","authors":"W. Ha, K. Shinohara, Z. Griffith, M. Urteaga, P. Chen, P. Rowell, B. Brar","doi":"10.1109/ICIPRM.2009.5012455","DOIUrl":"https://doi.org/10.1109/ICIPRM.2009.5012455","url":null,"abstract":"We report the development of high performance InP high electron mobility transistors (HEMTs) supported with three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. Depletion and enhancement mode devices with 35 nm gate-lengths are available with fT / fmax of 536/307 GHz and fT / fmax of 550/346 GHz, respectively. The process shows excellent device uniformity, yield, and reliability. The technology was used to demonstrate broadband feedback-linearized amplifiers with 20dB S21 gain and an OIP3 of 37 dBm at 2 GHz operation, where PDC is only 313mW.","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"763 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116132862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Widely tunable photonic crystal coupled cavity laser diodes based on quantum-dash active material 基于量子跃迁活性材料的宽调谐光子晶体耦合腔激光二极管
2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI: 10.1109/ICIPRM.2009.5012418
L. Nahle, C. Zimmermann, W. Zeller, K. Bruckner, H. Sieber, J. Koeth, S. Hein, S. Hofling, A. Forchel
{"title":"Widely tunable photonic crystal coupled cavity laser diodes based on quantum-dash active material","authors":"L. Nahle, C. Zimmermann, W. Zeller, K. Bruckner, H. Sieber, J. Koeth, S. Hein, S. Hofling, A. Forchel","doi":"10.1109/ICIPRM.2009.5012418","DOIUrl":"https://doi.org/10.1109/ICIPRM.2009.5012418","url":null,"abstract":"Widely tunable monomode laser diodes emitting in the 1.9 µm wavelength range have been realized on InP based InAs/InGaAs quantum dash-in-a-well active material. 2D photonic crystal structures are used to define coupled cavity devices with two sections yielding a tuning range of 36 nm. Water vapor absorption measurements are demonstrated at wavelengths more than 34 nm apart using one such photonic crystal coupled cavity laser diode.","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114471184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InAs QDs on thin GaP1−xNx buffer on GaP by MOCVD 通过MOCVD在GaP上的薄GaP1−xNx缓冲层上InAs QDs
2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI: 10.1109/ICIPRM.2009.5012417
S. Tanabe, R. Suzuki, T. Sengoku, K. Nemoto, T. Miyamoto
{"title":"InAs QDs on thin GaP1−xNx buffer on GaP by MOCVD","authors":"S. Tanabe, R. Suzuki, T. Sengoku, K. Nemoto, T. Miyamoto","doi":"10.1109/ICIPRM.2009.5012417","DOIUrl":"https://doi.org/10.1109/ICIPRM.2009.5012417","url":null,"abstract":"GaP-based InAs quantum dots (QDs) on a thin GaP<inf>1−x</inf>N<inf>x</inf> buffer layer grown by the low-pressure metalorganic chemical vapor deposition were investigated by the atomic force microscopy. The InAs dot density was significantly increased from 2.6×10<sup>9</sup> cm<sup>−2</sup> to 2.0×10<sup>10</sup> cm<sup>−2</sup> with increasing the nitrogen composition of the GaP<inf>1−x</inf>N<inf>x</inf> from x = 0 to 4.5. The InAs QDs grown on GaP and GaPN with various InAs supply from 0.7 monolayer (ML) to 2.5 ML was also investigated. The dot density of the InAs QDs on GaPN and GaP buffer layers drastically increased at the InAs supply of 1.0 ML and 1.1 ML, respectively. The InAs dot density was saturated when the InAs supply was more than 1.4 ML.","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129252790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of evanescent coupling between SOI waveguides and heterogeneously-integrated III–V pin photodetectors SOI波导与异质集成III-V管脚光电探测器间的倏逝耦合研究
2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI: 10.1109/ICIPRM.2009.5012467
Z. Sheng, Liu Liu, J. Brouckaert, Sailing He, D. van Thourhout, R. Baets
{"title":"Investigation of evanescent coupling between SOI waveguides and heterogeneously-integrated III–V pin photodetectors","authors":"Z. Sheng, Liu Liu, J. Brouckaert, Sailing He, D. van Thourhout, R. Baets","doi":"10.1109/ICIPRM.2009.5012467","DOIUrl":"https://doi.org/10.1109/ICIPRM.2009.5012467","url":null,"abstract":"Integrating III–V materials on Si is a promising candidate to realize both passive and active optical functions on a single silicon chip. We have developed this heterogeneous integration technology by means of an adhesive die-to-wafer bonding process under a low temperature. In this paper, efficient evanescent coupling between SOI waveguides and heterogeneously-integrated III–V pin photodetectors is proposed. The serious absorption by p-InGaAs and metal contact layers are greatly reduced by introducing a central opening on these layers. The thickness of the i-InGaAs layer is also optimized towards efficient absorption.","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124550907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
X-ray diffraction analysis of quantum cascdse lasers 量子级联激光器的x射线衍射分析
2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI: 10.1109/ICIPRM.2009.5012507
L. Cheng, Ruth Choa, J. Khurgin, F. Choa, Xingbo Chen, Xiaojun Wang, J. Fan, Jianxin Chen, C. Gmachl
{"title":"X-ray diffraction analysis of quantum cascdse lasers","authors":"L. Cheng, Ruth Choa, J. Khurgin, F. Choa, Xingbo Chen, Xiaojun Wang, J. Fan, Jianxin Chen, C. Gmachl","doi":"10.1109/ICIPRM.2009.5012507","DOIUrl":"https://doi.org/10.1109/ICIPRM.2009.5012507","url":null,"abstract":"Growth quality of quantum-cascade-lasers (QCLs) is difficult to be characterized due to the demanding requirements on hetero-interface quality and thickness control for all ≫1000 nano-scale superlattice stucture. In this work we employ X-ray diffractometry (XRD) to effectively evaluate QCL-wafer growths.","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130438715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs 表面处理对TiW对高掺杂n-InGaAs接触电阻率的影响
2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI: 10.1109/ICIPRM.2009.5012438
V. Jain, A. Baraskar, M. Wistey, U. Singisetti, Z. Griffith, E. Lobisser, B. Thibeault, A. Gossard, M. Rodwell
{"title":"Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs","authors":"V. Jain, A. Baraskar, M. Wistey, U. Singisetti, Z. Griffith, E. Lobisser, B. Thibeault, A. Gossard, M. Rodwell","doi":"10.1109/ICIPRM.2009.5012438","DOIUrl":"https://doi.org/10.1109/ICIPRM.2009.5012438","url":null,"abstract":"We report the effects of UV-ozone oxidation, oxide removal etch chemistry (dilute HCl or concentrated NH<inf>4</inf>OH), semiconductor doping, and annealing on the contact resistivity (ρ<inf>c</inf>) of Ti<inf>0.1</inf>W<inf>0.9</inf> refractory alloy to n-type InGaAs. The semiconductor surface was oxidized through exposure to UV-ozone, then subsequently etched by either dilute HCl or concentrated NH<inf>4</inf>OH before TiW contacts were deposited by blanket sputtering. InGaAs samples doped at 5 × 10<sup>19</sup> cm<sup>−3</sup>, treated with 10 minutes of UV-Ozone then one minute dilute HCl exhibited ρ<inf>c</inf> of (1.90 ± 0.35) × 10<sup>−8</sup> Ω-cm<sup>2</sup>. The contacts are thermally stable at least to 400 °C where after one minute anneal, ρ<inf>c</inf> reduced to (1.29 ± 0.28) × 10<sup>−8</sup> Ω-cm<sup>2</sup>. TiW contacts on samples having same active dopants, with no UV-ozone oxidation and only 10 seconds of concentrated NH<inf>4</inf>OH etch exhibit ρ<inf>c</inf> of (2.49 ± 0.40) ± 10<sup>−8</sup> Ω-cm<sup>2</sup>.","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131748556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Phase-locking in quantum cascade laser arrays 量子级联激光阵列中的锁相
2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI: 10.1109/ICIPRM.2009.5012482
L. Hoffmann, Matthias Klinkmuller, E. Mujagić, M. Semtsiv, W. Schrenk, W. Masselink, G. Strasser
{"title":"Phase-locking in quantum cascade laser arrays","authors":"L. Hoffmann, Matthias Klinkmuller, E. Mujagić, M. Semtsiv, W. Schrenk, W. Masselink, G. Strasser","doi":"10.1109/ICIPRM.2009.5012482","DOIUrl":"https://doi.org/10.1109/ICIPRM.2009.5012482","url":null,"abstract":"A monolithic coupling scheme for mid-infrared InP-based quantum cascade laser arrays is presented. The tree-shaped resonator exhibits phase-locking, which leads to in-phase emission from the coupled branches and a high level of modal control","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133539604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOVPE growth and structural charactrization of extremely lattice-mismatched InP-InSb nanowire heterostructures 晶格极不匹配InP-InSb纳米线异质结构的MOVPE生长和结构表征
2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI: 10.1109/ICIPRM.2009.5012492
B. Borg, M. Messing, P. Caroff, K. Dick, K. Deppert, L. Wernersson
{"title":"MOVPE growth and structural charactrization of extremely lattice-mismatched InP-InSb nanowire heterostructures","authors":"B. Borg, M. Messing, P. Caroff, K. Dick, K. Deppert, L. Wernersson","doi":"10.1109/ICIPRM.2009.5012492","DOIUrl":"https://doi.org/10.1109/ICIPRM.2009.5012492","url":null,"abstract":"We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133318218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Growth of InP crystals with rare-earth elements 含稀土元素InP晶体的生长
2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI: 10.1109/ICIPRM.2009.5012450
R. Yatskiv, J. Grym, K. Žďánský, L. Pekárek, J. Zavadil
{"title":"Growth of InP crystals with rare-earth elements","authors":"R. Yatskiv, J. Grym, K. Žďánský, L. Pekárek, J. Zavadil","doi":"10.1109/ICIPRM.2009.5012450","DOIUrl":"https://doi.org/10.1109/ICIPRM.2009.5012450","url":null,"abstract":"We report on the influence of rare earth (RE) elements (Pr, Er, and Dy) addition during vertical Bridgman low pressure synthesis on the properties of InP crystals. The temperature dependent Hall measurement and low-temperature photoluminescence (PL) spectroscopy were employed to study the changes in electrical and optical properties of the crystals. The observed changes are attributed to the gettering effect of REs caused by the high affinity of REs towards shallow impurities in InP.","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124392465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures 低温下InAs/AlSb hemt的直流特性
2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI: 10.1109/ICIPRM.2009.5012506
G. Moschetti, P. Nilsson, N. Wadefalk, M. Malmkvist, E. Lefebvre, J. Grahn, Y. Roelens, A. Noudéviwa, A. Olivier, S. Bollaert, F. Danneville, L. Desplanque, X. Wallart, G. Dambrine
{"title":"DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures","authors":"G. Moschetti, P. Nilsson, N. Wadefalk, M. Malmkvist, E. Lefebvre, J. Grahn, Y. Roelens, A. Noudéviwa, A. Olivier, S. Bollaert, F. Danneville, L. Desplanque, X. Wallart, G. Dambrine","doi":"10.1109/ICIPRM.2009.5012506","DOIUrl":"https://doi.org/10.1109/ICIPRM.2009.5012506","url":null,"abstract":"The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30K) and room temperature (300K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (R<inf>ON</inf>) and output conductance (g<inf>DS</inf>), a higher transconductance (g<inf>m</inf>) and a more distinct knee in the I<inf>DS</inf>(V<inf>DS</inf>) characteristics. The improvement in the DC performance at cryogenic temperature should mainly be attributed to the lower source-drain resistance.","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"1998 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124426678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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