DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI:10.1109/ICIPRM.2009.5012506

G. Moschetti, P. Nilsson, N. Wadefalk, M. Malmkvist, E. Lefebvre, J. Grahn, Y. Roelens, A. Noudéviwa, A. Olivier, S. Bollaert, F. Danneville, L. Desplanque, X. Wallart, G. Dambrine

引用次数: 7

Abstract

The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30K) and room temperature (300K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (RON) and output conductance (gDS), a higher transconductance (gm) and a more distinct knee in the IDS(VDS) characteristics. The improvement in the DC performance at cryogenic temperature should mainly be attributed to the lower source-drain resistance.

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低温下InAs/AlSb hemt的直流特性

研究了110 nm栅长InAs/ alsb基HEMTs在低温(30K)和室温(300K)下的直流特性。与300K相比，器件在30k下表现出更低的导通电阻(RON)和输出电导(gDS)，更高的跨导(gm)和更明显的IDS(VDS)特性。低温下直流性能的提高主要归功于源漏电阻的降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 IEEE International Conference on Indium Phosphide & Related Materials

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