L. Cheng, Ruth Choa, J. Khurgin, F. Choa, Xingbo Chen, Xiaojun Wang, J. Fan, Jianxin Chen, C. Gmachl
{"title":"量子级联激光器的x射线衍射分析","authors":"L. Cheng, Ruth Choa, J. Khurgin, F. Choa, Xingbo Chen, Xiaojun Wang, J. Fan, Jianxin Chen, C. Gmachl","doi":"10.1109/ICIPRM.2009.5012507","DOIUrl":null,"url":null,"abstract":"Growth quality of quantum-cascade-lasers (QCLs) is difficult to be characterized due to the demanding requirements on hetero-interface quality and thickness control for all ≫1000 nano-scale superlattice stucture. In this work we employ X-ray diffractometry (XRD) to effectively evaluate QCL-wafer growths.","PeriodicalId":119124,"journal":{"name":"2009 IEEE International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"X-ray diffraction analysis of quantum cascdse lasers\",\"authors\":\"L. Cheng, Ruth Choa, J. Khurgin, F. Choa, Xingbo Chen, Xiaojun Wang, J. Fan, Jianxin Chen, C. Gmachl\",\"doi\":\"10.1109/ICIPRM.2009.5012507\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Growth quality of quantum-cascade-lasers (QCLs) is difficult to be characterized due to the demanding requirements on hetero-interface quality and thickness control for all ≫1000 nano-scale superlattice stucture. In this work we employ X-ray diffractometry (XRD) to effectively evaluate QCL-wafer growths.\",\"PeriodicalId\":119124,\"journal\":{\"name\":\"2009 IEEE International Conference on Indium Phosphide & Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2009.5012507\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2009.5012507","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
X-ray diffraction analysis of quantum cascdse lasers
Growth quality of quantum-cascade-lasers (QCLs) is difficult to be characterized due to the demanding requirements on hetero-interface quality and thickness control for all ≫1000 nano-scale superlattice stucture. In this work we employ X-ray diffractometry (XRD) to effectively evaluate QCL-wafer growths.