Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs

2009 IEEE International Conference on Indium Phosphide & Related Materials Pub Date : 2009-05-10 DOI:10.1109/ICIPRM.2009.5012438

V. Jain, A. Baraskar, M. Wistey, U. Singisetti, Z. Griffith, E. Lobisser, B. Thibeault, A. Gossard, M. Rodwell

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引用次数: 9

Abstract

We report the effects of UV-ozone oxidation, oxide removal etch chemistry (dilute HCl or concentrated NH4OH), semiconductor doping, and annealing on the contact resistivity (ρc) of Ti0.1W0.9 refractory alloy to n-type InGaAs. The semiconductor surface was oxidized through exposure to UV-ozone, then subsequently etched by either dilute HCl or concentrated NH4OH before TiW contacts were deposited by blanket sputtering. InGaAs samples doped at 5 × 10¹⁹ cm⁻³, treated with 10 minutes of UV-Ozone then one minute dilute HCl exhibited ρc of (1.90 ± 0.35) × 10⁻⁸ Ω-cm². The contacts are thermally stable at least to 400 °C where after one minute anneal, ρc reduced to (1.29 ± 0.28) × 10⁻⁸ Ω-cm². TiW contacts on samples having same active dopants, with no UV-ozone oxidation and only 10 seconds of concentrated NH4OH etch exhibit ρc of (2.49 ± 0.40) ± 10⁻⁸ Ω-cm².

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表面处理对TiW对高掺杂n-InGaAs接触电阻率的影响

本文报道了uv -臭氧氧化、氧化去除蚀刻化学(稀HCl或浓NH4OH)、半导体掺杂和退火对Ti0.1W0.9耐火合金对n型InGaAs接触电阻率(ρc)的影响。半导体表面通过暴露于uv -臭氧中氧化，然后用稀HCl或浓NH4OH蚀刻，然后用覆盖溅射沉积TiW触点。在5 × 1019 cm−3下掺杂的InGaAs样品，经过10分钟的uv -臭氧和1分钟的稀释HCl处理，其ρc为(1.90±0.35)× 10−8 Ω-cm2。触点至少在400°C时热稳定，经过一分钟的退火，ρc降至(1.29±0.28)× 10−8 Ω-cm2。采用相同活性掺杂剂、无uv -臭氧氧化、仅进行10秒浓NH4OH蚀刻的样品上，TiW触点的ρc为(2.49±0.40)±10−8 Ω-cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2009 IEEE International Conference on Indium Phosphide & Related Materials

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