Advanced Optical Materials最新文献_第7页

Enhanced THz Emission From Ultrathin Ta/Fe/Pt Spintronic Trilayers 超薄Ta/Fe/Pt自旋电子三层膜增强太赫兹辐射

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-05 DOI: 10.1002/adom.202500874

Evangelos Th. Papaioannou, Laura Scheuer, Garik Torosyan, George P. Dimitrakopulos, Sławomir Kret, Alina D. Crisan, Ovidiu Crisan, René Beigang, Thomas Kehagias

{"title":"Enhanced THz Emission From Ultrathin Ta/Fe/Pt Spintronic Trilayers","authors":"Evangelos Th. Papaioannou, Laura Scheuer, Garik Torosyan, George P. Dimitrakopulos, Sławomir Kret, Alina D. Crisan, Ovidiu Crisan, René Beigang, Thomas Kehagias","doi":"10.1002/adom.202500874","DOIUrl":"10.1002/adom.202500874","url":null,"abstract":"Terahertz (THz) spintronic emitters represent a novel class of heterostructures composed of ferromagnetic (FM) and non-magnetic (NM) metallic layers that strongly emit terahertz (THz) radiation upon femtosecond laser pulse excitation. The optimal geometric configuration to maximize the strength of the emission is currently considered a trilayer structure, NM1/FM/NM2, where the FM layer is confined between two NM layers with opposite spin Hall angles. To investigate this, ultrathin Ta/Fe/Pt trilayers are fabricated and their THz emission profiles are analyzed. These results show that the highest THz emission is achieved for the sample of Ta (1.5 nm)/Fe (2 nm)/Pt (2 nm), demonstrating a significant enhancement compared to standard FM/NM bilayers. Furthermore, the thickness dependence of the THz emission is modeled in Ta (t1 nm)/Fe (2 nm)/Pt (t2 nm), varying t1 and t2 from 1 nm to 3 nm. From this analysis, spin diffusion lengths of λPt = 1.2 nm and λTa = 0.85 nm are extracted. The structure–property relationship is assessed via transmission electron microscopy, revealing that an epitaxial single-crystalline Ta layer covers the MgO surface with Ta adopting a high-resistivity fcc allotropic phase with a lattice parameter of a = 0.436 nm. This phase, together with the prerequisite for low Ta+Pt thickness, emerges as a key factor in achieving high THz emission from trilayer structures.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 27","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adom.202500874","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145110812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

COSMOS: Correlation-Optimized Spectral Modulation Optical Sensing COSMOS：相关优化的光谱调制光学传感

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-07-31 DOI: 10.1002/adom.202501445

Qingze Guan, Zi Heng Lim, Yixiu Shen, Guangya Zhou

引用次数: 0

Interface Bridge Engineering for High Efficient Hole Injection in CZTS-Based Perovskite Light-Emitting Diodes 基于czts的钙钛矿发光二极管高效空穴注入的界面桥接工程

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-07-31 DOI: 10.1002/adom.202501028

Maolin Mu, Wen Li, Lunyao Pan, Xiankan Zeng, Qungui Wang, Yongjian Chen, Chenglong Li, Di Shen, Xinning Wang, Shiyu Yang, Hongqiang Xin, Weiqing Yang

{"title":"Interface Bridge Engineering for High Efficient Hole Injection in CZTS-Based Perovskite Light-Emitting Diodes","authors":"Maolin Mu, Wen Li, Lunyao Pan, Xiankan Zeng, Qungui Wang, Yongjian Chen, Chenglong Li, Di Shen, Xinning Wang, Shiyu Yang, Hongqiang Xin, Weiqing Yang","doi":"10.1002/adom.202501028","DOIUrl":"10.1002/adom.202501028","url":null,"abstract":"Achieving balanced charge injection and transport in perovskite light-emitting diodes (PeLEDs) remains challenging due to the large energy level offset between the indium tin oxide (ITO) electrode and the hole transport layer, coupled with an unsatisfactory hole injection capability. Given that Cu2ZnSnS4 (CZTS) offers a deep valence band maximum, high hole mobility, high stability, and cost-effectiveness. Here, CZTS is introduced as a hole injection layer between the ITO and poly(9-vinylcarbazole) (PVK) layers to align energy level and increase hole injection capacity. The huge difference between CZTS and PVK work functions creates a robust interfacial electric field, resulting in an interfacial dipole effect, which significantly enhancing hole injection and boosting the carrier radiative recombination efficiency. Meanwhile, the robust CZTS/PVK interface favors high-quality FAPbBr3 films with good morphology and reduced defects. The resulting optimized PeLEDs with a peak emission wavelength of 529 nm achieve an external quantum efficiency (EQE) of 15.44%, a turn-on voltage of 3 V and current efficiency (CE) of 75.3 cd A−1, significantly outperforming the control devices, which exhibit an EQE of 7.55%, a turn-on voltage of 3.4 V and CE of 35.4 cd A−1. This study provides novel insights into constructing efficient PeLEDs through enhanced hole injection using CZTS.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 27","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145111316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adaptively Switching Between Amplification and Absorption by an Intelligent Omni-Metasurface With Nonlinear Spectral Singularity 具有非线性光谱奇异性的智能全超表面放大与吸收自适应切换

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-07-30 DOI: 10.1002/adom.202501726

Yinghui Ren, Yihan Wang, Peiqi Chen, Xiaogang Wang, Chijie Xiao, Shu Lin, Qiuyue Nie, Zhuotao Meng, Tao Jiang, Xingyu Zhao

{"title":"Adaptively Switching Between Amplification and Absorption by an Intelligent Omni-Metasurface With Nonlinear Spectral Singularity","authors":"Yinghui Ren, Yihan Wang, Peiqi Chen, Xiaogang Wang, Chijie Xiao, Shu Lin, Qiuyue Nie, Zhuotao Meng, Tao Jiang, Xingyu Zhao","doi":"10.1002/adom.202501726","DOIUrl":"https://doi.org/10.1002/adom.202501726","url":null,"abstract":"Lasing effects at spectral singularities, along with coherent perfect absorption enable by their time-reversal symmetry, pave the way for achieving high-contrast amplification and absorption within a single device. However, prior experimental realizations typically rely on laborious manual tuning of the phase difference between signal and pump waves. To address this issue, an approach is proposed and experimentally demonstrated, enabling adaptive switching between amplification and absorption at the same frequency depending on the incident intensity. This is achieved by triggering nonlinear spectral singularities in an intelligent omni-metasurface (IOM). When the incident power exceeds the optimal communication level (≈ − 40 dBm), the system transitions automatically from a regime of linear spectral singularity—exhibiting full-space electromagnetic (EM) wave amplification exceeding 20 dB—to a regime of coherent absorption, with attenuation as low as −8 dB. Such an adaptive behavior, arises from the nonlinear response of embedded negative differential resistance devices to incident EM waves, eliminates the need for additional manual feedback or sensing systems. Thus, the proposed IOM provides a simple and convenient means to adaptively maintain EM signal strength slightly above the optimal level (≈− 35 dBm) in wireless power and information transmission systems, enabling user-friendly smart EM environments.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145197150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Energy-Level TADF Sensitizers Based on Twisted Diphenyltriazine Acceptors for Deep-Blue Multi-Resonance OLEDs 基于扭曲二苯三嗪受体的深蓝多共振oled高能TADF增敏剂

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-07-30 DOI: 10.1002/adom.202501323

Song Shi, Xingdong Wang, Lei Zhao, Jianhong Lv, Shiyang Shao, Lixiang Wang

{"title":"High-Energy-Level TADF Sensitizers Based on Twisted Diphenyltriazine Acceptors for Deep-Blue Multi-Resonance OLEDs","authors":"Song Shi, Xingdong Wang, Lei Zhao, Jianhong Lv, Shiyang Shao, Lixiang Wang","doi":"10.1002/adom.202501323","DOIUrl":"10.1002/adom.202501323","url":null,"abstract":"Here, two high-energy-level thermally activated delayed fluorescence (TADF) sensitizers (Me-TRZCz and DMe-TRZCz) based on twisted diphenyltriazine acceptors for efficient deep-blue multi-resonance (MR) organic light-emitting diodes (OLEDs) are reported. Unlike the analog sensitizer (TRZCz) with planar acceptor, Me-TRZCz and DMe-TRZCz, having two steric methyl groups on diphenyltriazine acceptors, exhibit twisted geometry with a distortion angle of ≈30° between peripheral phenyl units and central triazine unit, yielding high S1/T1 energies of ≈2.97/2.89 eV that are much higher than those of TRZCz. The increased excited-state energy level ensures efficient overlap of sensitizer emission with absorption of deep-blue MR emitter, leading to complete energy transfer from the former to the latter. Consequently, solution-processed OLEDs employing the sensitizers and a boron, sulfur-based MR emitter exhibit efficient narrowband deep-blue electroluminescence with CIE coordinates of (0.13, 0.10), full width at half maximum (FWHM) of 33 nm, and maximum external quantum efficiency of 17.1%, representing state-of-the-art device efficiency for deep-blue MR OLEDs by solution process.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 27","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145111369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Vertical Alignment of InGaN/GaN Nanorod LEDs Through Dielectrophoresis with Donut-Shaped Nanohole Electrodes 环形纳米孔电极双向电泳增强InGaN/GaN纳米棒led垂直对准

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-07-30 DOI: 10.1002/adom.202501897

Yeong-Hoon Cho, Jiwon Park, Taehwan Kim, Pil-Kyu Jang, In-Hwan Lee

{"title":"Enhanced Vertical Alignment of InGaN/GaN Nanorod LEDs Through Dielectrophoresis with Donut-Shaped Nanohole Electrodes","authors":"Yeong-Hoon Cho, Jiwon Park, Taehwan Kim, Pil-Kyu Jang, In-Hwan Lee","doi":"10.1002/adom.202501897","DOIUrl":"https://doi.org/10.1002/adom.202501897","url":null,"abstract":"Dielectrophoresis (DEP) has emerged as a promising mass transfer method, leading to various studies on the alignment of nanorod light-emitting diodes (NRLs). However, most studies have focused on horizontal alignment, which limits light extraction due to a mismatch between the alignment and major emission directions of NRLs, and makes it difficult to precisely position NRLs at the desired locations. In this study, a vertical alignment strategy for NRLs with an enhanced alignment yield is presented using DEP by introducing a donut-shaped nanohole electrode (DNE) structure. The DNE comprises two electrodes separated by an insulating layer, with a central post located within each nanohole. This post prevents the NRLs from tilting and lying horizontally on the bottom electrode, thereby enabling the placement of multiple NRLs within a single nanohole. Moreover, the alignment tendency can be effectively controlled by optimizing NRL and DNE dimensions. Consequently, alignment yields of 78%, 63%, and 61% are achieved for 1 × 1, 2 × 2, and 3 × 3 DNE arrays, respectively. These results highlight the feasibility of the proposed structure for the precise positioning of the NRLs, offering a promising pathway toward ultrasmall, high-resolution display pixels for next-generation display technologies.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145197147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Circularly Polarized Luminescence in Chiral Materials: Navigating Trade-Offs between Luminescence Dissymmetry Factor and Photoluminescence Quantum Yield 手性材料中的圆偏振发光：发光不对称因子和光致发光量子产率之间的导航权衡

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-07-30 DOI: 10.1002/adom.202501569

Qian Xu, Jipeng Fu, Mingxue Tang, Hongbin Yao, Jun Lin

{"title":"Circularly Polarized Luminescence in Chiral Materials: Navigating Trade-Offs between Luminescence Dissymmetry Factor and Photoluminescence Quantum Yield","authors":"Qian Xu, Jipeng Fu, Mingxue Tang, Hongbin Yao, Jun Lin","doi":"10.1002/adom.202501569","DOIUrl":"https://doi.org/10.1002/adom.202501569","url":null,"abstract":"Circularly polarized luminescence (CPL) materials attract significant attention in both elementary research and industrial applications due to their distinctive optical properties and potential in various advanced technologies. In this review, a thorough summary of the developments in the field, focusing on the property-oriented design strategies, material innovations, and emerging applications is provided. A brief introduction to the fundamental theory of CPL is provided in the beginning. Then the primary strategies to enhancing dissymmetry factor and quantum yield are highlighted based on the traditional and emerging chiral structure, including thermally activated delayed fluorescence molecules, supramolecular assemblies, liquid crystal materials, lanthanide complexes, metal clusters, and perovskite materials. Furthermore, the diverse and impactful applications of CPL materials are overall investigated and reviewed, encompassing the 3D optical displays, information encryption and storage, biomedicine, and optoelectronic devices. Finally, an outlook on the challenges and perspectives will provide inspiration to drive the development of CPL materials.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145197223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis, Room-Temperature Phosphorescence Properties and Mechanisms of Aliphatic Polyamides with Different Carbon Chain Length 不同碳链长度脂肪族聚酰胺的合成、室温磷光性质及机理

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-07-30 DOI: 10.1002/adom.202501172

Min Liu, Mengzhirou Huang, Yongjie Yuan, Yan Yu, Hailiang Zhang

{"title":"Synthesis, Room-Temperature Phosphorescence Properties and Mechanisms of Aliphatic Polyamides with Different Carbon Chain Length","authors":"Min Liu, Mengzhirou Huang, Yongjie Yuan, Yan Yu, Hailiang Zhang","doi":"10.1002/adom.202501172","DOIUrl":"https://doi.org/10.1002/adom.202501172","url":null,"abstract":"Polyamides, a class of polymer materials containing amide groups, are widely utilized for their outstanding mechanical strength, thermal stability, and processability. Recent studies have revealed that polyamides also exhibit room-temperature phosphorescence characteristics. However, the fundamental luminescence mechanism and the factors influencing their photo-physical remain unclear and require further investigation. In this research, a series of aliphatic polyamides are synthesized and a comprehensive investigation is conducted to elucidate the impact of carbon chain length on their photo-physical properties and the underlying mechanisms. As the carbon chain length of polyamides increases, their phosphorescence emission spectra first red-shift and then blue-shift, while the phosphorescence lifetime and quantum yield first increase and then decrease. Notably, even–odd polyamides show better phosphorescent luminescence performance compared to even–even polyamides. Among the synthesized polyamides, PA69 demonstrates the most favorable phosphorescence properties, with a lifetime of 1.22 s and a quantum yield of 15.98% at room temperature. This study reveals that the phosphorescence properties of polyamides are strongly correlated with their hydrogen bond content. As the carbon chain length increases, the hydrogen bond content initially increases and then decreases, leading to a corresponding trend in which both the phosphorescence quantum yield and lifetime first rise and then decline.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145197234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Submicrosecond Electric Switching of Large Birefringence in the Isotropic Phase of Ferroelectric Nematics 铁电向列相中各向同性大双折射的亚微秒电开关

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-07-30 DOI: 10.1002/adom.202501338

Kamal Thapa, Sathyanarayana Paladugu, Oleg D. Lavrentovich

引用次数: 0

Photomultiplication-Type β-Ga2O3 Solar-Blind Photodetector with Excellent Capability of Weak Signal Detection and Anti-Interference DUV Imaging 具有优异弱信号检测和抗干扰DUV成像能力的光电倍增型β-Ga2O3日盲光电探测器

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-07-30 DOI: 10.1002/adom.202501641

Chenxing Liu, Yushi Wang, Hongchao Zhai, Zhengyuan Wu, Daoyou Guo, Xin Dong, Jianlu Wang, Weihua Tang, Junyong Kang, Junhao Chu, Zhilai Fang

{"title":"Photomultiplication-Type β-Ga2O3 Solar-Blind Photodetector with Excellent Capability of Weak Signal Detection and Anti-Interference DUV Imaging","authors":"Chenxing Liu, Yushi Wang, Hongchao Zhai, Zhengyuan Wu, Daoyou Guo, Xin Dong, Jianlu Wang, Weihua Tang, Junyong Kang, Junhao Chu, Zhilai Fang","doi":"10.1002/adom.202501641","DOIUrl":"https://doi.org/10.1002/adom.202501641","url":null,"abstract":"Achieving both low noise current and high photoconductivity gain in photodetectors (PDs) is essential for weak signal detection, but this remains a significant challenge in the state-of-the-art PDs. We fabricated highly sensitive solar-blind PDs on C-N co-doped β-Ga2O3 films with an extremely low dark current (10−13 A) and noise current (10−13 A Hz−1/2), an extremely high photoresponsivity and external quantum efficiency (≈5.2 × 105 A W−1 and 2.6 × 108%), a high 254 nm/280 nm rejection ratio (160), good transient photo-response characteristics and a wide linear dynamic range, exhibiting excellent capabilities of anti-interference deep-ultraviolet (DUV) imaging and optical communication. The extremely low noise current is attributed to the trapping of holes through deep-acceptor energy levels and weak electron-phonon scattering from C and N impurities. A photomultiplication mechanism is proposed and clarified by collective excitation of trapped holes and photogenerated carriers, which is triggered and amplified by impact ionization under strong electric fields arising from the external bias and photoinduced electric fields. This work presents a solution for the development of high-performance β-Ga2O3-based solar-blind PDs with DUV detection accuracy and weak signal detectivity, and paves the way for the evolution of DUV PDs applications in weak signal detection, anti-interference imaging, and optical communication.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145197152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0