2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)最新文献_第7页

Characterization of n-channel MOSFETs: Electrical measurements and simulation analysis n沟道mosfet的特性:电测量与仿真分析

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818864

Viktoryia Uhnevionak, C. Strenger, A. Burenkov, V. Mortet, E. Bedel-Pereira, J. Lorenz, P. Pichler

{"title":"Characterization of n-channel MOSFETs: Electrical measurements and simulation analysis","authors":"Viktoryia Uhnevionak, C. Strenger, A. Burenkov, V. Mortet, E. Bedel-Pereira, J. Lorenz, P. Pichler","doi":"10.1109/ESSDERC.2013.6818864","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818864","url":null,"abstract":"n-channel 4H-SiC MOSFETs were manufactured and characterized electrically at room temperature by current-voltage and Hall-effect measurements as well as by numerical simulations. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Trap (NIT) and charge carrier mobility degradation models were included in the simulation, performed with Sentaurus Device of Synopsys. For an accurate description of interface defects, their density versus trap energy was extracted from Hall-effect measurements. The result of the extraction indicates a continuous spreading of interface traps in the SiC conduction band, which was not reported before. For the first time also, the interface trap density as a function of trap energy as extracted from Hall-effect measurements was used directly in Sentaurus Device simulations. To check the applicability of the suggested model, it was used for the electrical simulation of MOSFETs with different channel lengths and widths but manufactured using the same technological processes. The developed simulation model shows excellent agreement with experimental results.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133614930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer service 伪自旋mosfet的单片集成，使用通过多项目晶圆服务制造的定制CMOS芯片

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818871

R. Nakane, Y. Shuto, H. Sukegawa, Z. Wen, Shuu'ichirou Yamamoto, S. Mitani, Masaaki Tanaka, K. Inomata, S. Sugahara

{"title":"Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer service","authors":"R. Nakane, Y. Shuto, H. Sukegawa, Z. Wen, Shuu'ichirou Yamamoto, S. Mitani, Masaaki Tanaka, K. Inomata, S. Sugahara","doi":"10.1109/ESSDERC.2013.6818871","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818871","url":null,"abstract":"We demonstrated monolithic integration of pseudo-spin-MOSFETs (PS-MOSFETs) using vendor-made MOSFETs fabricated in a low-cost multi-project wafer (MPW) product and lab-made magnetic tunnel junctions (MTJs) formed on the topmost passivation film of the MPW chip. The tunneling magnetoresistance (TMR) ratio of the fabricated MTJs strongly depended on the surface roughness of the passivation film. Nevertheless, after the chip surface was atomically flattened by SiO2 deposition and successive chemical-mechanical polish (CMP) process, the fabricated MTJs on the surface exhibited a sufficiently large TMR ratio (> 140 %) adaptable to the PS-MOSFET application. The implemented PS-MOSFETs showed clear modulation of the output current controlled by the magnetization configuration of the MTJs, and a maximum magnetocurrent ratio of 90 % was achieved. These magnetocurrent behaviors were quantitatively consistent with those predicted by HSPICE simulations. The developed integration technique using a MPW CMOS chip would also be applied to monolithic integration of CMOS devices/circuits and other various functional devices/materials, which would open the door for exploring CMOS-based new functional hybrid circuits.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124924742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Effect of ions presence in the SiOCH inter metal dielectric structure 离子存在对SiOCH金属间介电结构的影响

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818858

Benjamin Rebuffat, V. D. Marca, P. Masson, J. Ogier, M. Mantelli, Olivier Paulet, L. Lopez, R. Laffont

引用次数: 0

Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band 用于亚太赫兹波段光子频率双混频转换的石墨烯通道场效应管

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818882

T. Kawasaki, A. Dobroiu, T. Eto, Y. Kurita, K. Kojima, Y. Yabe, H. Sugiyama, Takayuki Watanabe, Susumu Takabayashi, T. Suemitsu, V. Ryzhii, K. Iwatsuki, T. Otsuji, Y. Fukada, J. Kani, J. Terada, N. Yoshimoto

引用次数: 23

Nanomagnetic logic clocked in the MHz regime 纳米磁逻辑时钟在兆赫频段

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818872

M. Becherer, J. Kiermaier, S. B. Gamm, I. Eichwald, G. Csaba, D. Schmitt-Landsiedel

引用次数: 22

Towards rectennas for solar energy harvesting 朝向太阳能收集的整流天线

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818836

N. Sedghi, Jingwei Zhang, J. Ralph, Yi Huang, I. Mitrovic, S. Hall

引用次数: 4

Emerging memories 新兴的记忆

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818813

L. Baldi, G. Sandhu

引用次数: 30

RF MEMS power sensors for ultra-low power wake-up circuit applications 用于超低功耗唤醒电路的射频MEMS功率传感器

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818875

W. Vitale, M. Fernandez-Bolaños, A. Bazigos, C. Dehollain, A. Ionescu

{"title":"RF MEMS power sensors for ultra-low power wake-up circuit applications","authors":"W. Vitale, M. Fernandez-Bolaños, A. Bazigos, C. Dehollain, A. Ionescu","doi":"10.1109/ESSDERC.2013.6818875","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818875","url":null,"abstract":"Power savings requirements in wake-up circuits and RFID applications can greatly benefit from the emerging RF MEM technology. In this paper we report an RF MEM power sensor that can simultaneously offer significant power savings and co-integration with wake-up CMOS circuitry. The RF MEM sensor has no DC power consumption (in contrast to solid state diodes) and can be actuated by an RF signal as low as tenths of μW. We investigate a design and operation exploiting an RF MEM capacitive switch biased near the pull-in voltage. The device has the remarkable feature of tunable power sensitivity by the applied DC bias. We experimentally demonstrate that the RF MEM power sensor principle can be efficiently applied to a wideband range of signals (measured from kHz to 6 GHz) and for RF power smaller than 1 μW. We report a study on the influence of the different parameters to better understand the performance (power savings and improved sensitivity with respect to standard capacitive sensors, up to 10 fF mW-1) and the limits of this device in terms of robustness/repeatability. An application for semi-passive RFID tags operating in the ISM bands (2.4-5.8 GHz) has been proposed, showing the feasibility of ultra-low power implementations of the wake-up circuit.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115574299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations 基于HfOx的RRAM器件的无成形操作:实验与从头计算

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818846

B. Traoré, E. Vianello, G. Molas, M. Gely, J. Nodin, E. Jalaguier, P. Blaise, B. D. Salvo, L. Fonseca, Kanhao Xue, Y. Nishi

引用次数: 5

Low power finfet ph-sensor with high-sensitivity voltage readout 具有高灵敏度电压读出的低功率微型ph传感器

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818890

S. Rigante, P. Livi, M. Wipf, K. Bedner, D. Bouvet, A. Bazigos, A. Rusu, A. Hierlemann, A. Ionescu

引用次数: 3