Diamond and Related Materials最新文献

{"title":"Rapid and efficient detection of acetone using C20-based nanostructures: A novel non-invasive strategy for diabetes assay through DFT/TD-DFT calculations","authors":"Ahmad Khaleel AlOmari","doi":"10.1016/j.diamond.2025.112137","DOIUrl":"10.1016/j.diamond.2025.112137","url":null,"abstract":"<div><div>The urgent demand for non-invasive, rapid diabetes detection has inspired this study, which investigates C₂₀ fullerene and its doped derivatives (BeC₁₉, MgC₁₉, and CaC₁₉) as nanostructured sensors for acetone (Ac), a biomarker in exhaled breath. Computational analysis using density functional theory (DFT) and time-dependent DFT (TD-DFT) reveals CaC19 as the most promising candidate, with the highest dipole moment (29.65 D), a substantial UV–visible redshift (580 nm), and rapid recovery time (4.4 × 10⁻¹¹ s). This sensor demonstrates superior sensitivity and efficiency for detecting acetone via visible colorimetric changes, offering a fast and reusable solution for real-time diabetes monitoring. These findings highlight Ca-doped C₂₀ fullerene as a promising candidate for non-invasive, rapid diabetes monitoring.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112137"},"PeriodicalIF":4.3,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143511640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Brominated graphene oxide: A novel synthesis approach for enhanced performance in energy storage applications","authors":"I. Jemina ,&nbsp;N. Mani ,&nbsp;Pugalenthi Ramesh ,&nbsp;N. Sudha","doi":"10.1016/j.diamond.2025.112135","DOIUrl":"10.1016/j.diamond.2025.112135","url":null,"abstract":"<div><div>Graphene halides, a class of graphene derivatives with covalently attached halogens, represent an exciting category of two-dimensional materials with remarkable physical and chemical characteristics. This study explores the energy storage properties of electrodes based on bromine and oxygen intercalated graphite, synthesized using a strong oxidizing agent and hydro bromic acid at room temperature. A novel approach was employed by utilizing piranha and hydro bromic acid as an alternative to meta-chloroperoxybenzoic acid and hydrogen peroxide (m-CPBA and H2O2) for post-oxidation, significantly enhancing oxygen and bromine simultaneously on the graphite surface. The Br-GO material was extensively characterized using PXRD, XPS, BET, Raman spectroscopy, SEM, and FT-IR, confirming the successful intercalation of bromine and different oxygen moieties onto the graphite surface. Electrochemical characteristics of the Br-GO electrode were analysed using CV, EIS, and GCD techniques with 6 M KOH as the electrolytic solution. These results indicated that the Br-GO electrode exhibited quasi-rectangular capacitance behaviour, achieving a high specific capacitance of 371.4 F g⁻¹ at a current density of 1 A g⁻¹ and maintaining excellent cycling stability with only 9 % capacitance loss over 5000 cycles. This enhanced performance can be obtained due to improved ionic mobility facilitated by the bromine and oxygen content on the graphite surface. Additionally, the iodinated graphene derivative achieved a bromine content of 3.2 wt%. The proposed synthesis route offers a straightforward, scalable and efficient one-pot synthesis for producing brominated graphene oxide, demonstrating significant potential for use in supercapacitors applications.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112135"},"PeriodicalIF":4.3,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143510886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of soft X-rays on vacancy-type defects in highly hydrogenated DLC films","authors":"Kazuhiro Kanda ,&nbsp;Daisuke Niwa ,&nbsp;Tomohiro Mishima ,&nbsp;Fuminobu Hori ,&nbsp;Atsushi Yabuuchi ,&nbsp;Atsushi Kinomura","doi":"10.1016/j.diamond.2025.112136","DOIUrl":"10.1016/j.diamond.2025.112136","url":null,"abstract":"<div><div>Processes for modifying highly hydrogenated diamond-like carbon (H-DLC) films by soft X-ray irradiation were investigated by obtaining information on vacancy-type defects from positron annihilation spectroscopy measurements using slow positron beams. The vacancy-type defects in the H-DLC films were found to increase even through soft X-ray irradiation caused the density of the films to increase. In addition, despite the increase in vacancy-type defects, the Doppler shift of γ-rays produced by annihilation was found to increase, and it was concluded that this increase was due to the chemical environment around the vacancy-type defects changing from hydrogen to carbon upon soft X-ray irradiation.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112136"},"PeriodicalIF":4.3,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143527353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and optimization of graphene based wideband programmable coding metasurface for beam steering of terahertz waves","authors":"Seyed Saeed Efazat,&nbsp;Shahrokh Jam,&nbsp;Raheleh Basiri","doi":"10.1016/j.diamond.2025.112131","DOIUrl":"10.1016/j.diamond.2025.112131","url":null,"abstract":"<div><div>In this manuscript, a graphene based optimized wideband 2-bit unit cell is proposed for THz beam steering. The proposed structure, may be utilized in THz communication networks including 6G wireless applications. The proposed structure has two distinct graphene parts where the corresponding chemical potential of each part may be varied separately. Therefore, a 2-bit controllable unit cell is realized. Moreover, the Random Hill Climbing optimization algorithm is used to improve the bandwidth of the 2-bit unit cell. A prescribed link between CST and MATLAB softwares is employed to define and simulate various graphene patch constructions. The optimization is done simultaneously on pattern of graphene patch and chemical potentials of graphene parts. The relative bandwidth of the proposed unit cell is 23.9 % (1.4–1.78 THz) whereas the corresponding size is 0.22 <em>λ</em> at 1.6 THz. Two proposed metasurfaces are designed for arbitrary azimuthal angles of <span><math><msup><mn>0</mn><mo>°</mo></msup></math></span> and <span><math><msup><mn>45</mn><mo>°</mo></msup></math></span>. The reflected beam for two configurations is simulated at different beginning, middle, and end frequencies of 1.4 THz, 1.6 THz, and 1.78 THz. According to simulation results, the direction of the reflected beam is fixed over the operating frequency band. Therefore, the proposed structures are good candidates for wideband wireless communication networks.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112131"},"PeriodicalIF":4.3,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143487533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Above-bandgap and sub-bandgap photoelectron emission from diamond‑silver nanocomposite thin films","authors":"Anand B. Ode,&nbsp;Robert J. Hamers","doi":"10.1016/j.diamond.2025.112133","DOIUrl":"10.1016/j.diamond.2025.112133","url":null,"abstract":"<div><div>Recent studies have demonstrated that the introduction of silver nanoparticles into semiconducting films increases their electron emission characteristics and their ability to catalyzing chemical reduction reactions. This study investigates the impact of silver nanoparticles on the electron emission characteristics of diamond thin films. Ag nanoparticles were produced by thermal evaporation onto H-terminated surfaces of freshly grown diamond thin films produced by plasma-enhanced chemical vapor deposition and were then encapsulated using another stage of seeding and diamond growth. The energy distribution of the emitted electrons was characterized when illuminated with sub-bandgap light sources at 261 nm (4.75 eV) and 405 nm (3.05 eV) and with above-band light at 21.2 eV. At 261 nm the diamond-Ag-diamond structures increase photoelectron yield by approximately 3× compared with freshly H-terminated diamond, while at 405 nm the yield is increased approximately 200-fold. Our results suggest that the encapsulated Ag nanoparticle likely increase the yield through a combination of effects, including increasing the amount of sp²-hybridized carbon in the near-surface region, charge equilibration at the Ag-diamond interface, and increased scattering in the near-surface region, thereby increasing the effective optical absorption close to the diamond surface.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112133"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143479056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nb/Boron-doped diamond electrodes: Preparation, electrochemical ozone production and failure behavior","authors":"Xu Lin ,&nbsp;Huiqiang Liu ,&nbsp;Bing Wang ,&nbsp;Wanlin Yang ,&nbsp;Jian Wang ,&nbsp;Wen Zhang ,&nbsp;Wen Yuan ,&nbsp;Jia Liu ,&nbsp;Yifan Xu ,&nbsp;Ying Xiong","doi":"10.1016/j.diamond.2025.112130","DOIUrl":"10.1016/j.diamond.2025.112130","url":null,"abstract":"<div><div>Boron-doped diamond (BDD) is considered an excellent anode material for electrochemical ozone production (EOP) due to its high oxygen evolution potential, physical and chemical stability, and non-toxicity. However, the preparation of BDD films on substrates that exhibit both high ozone production efficiency and electrode stability remains a significant challenge. This study systematically investigates the effect of boron (B) concentration on ozone production performance, as well as the failure behavior of Nb/BDD electrode at optimal B concentration during the real EOP process. Firstly, BDD films with different B doping concentrations were prepared on Nb substrates by using the hot-filament chemical vapor deposition (HFCVD) technique. It was observed that the electrochemical active surface area (ECSA) and the EOP performance of the Nb/BDD electrodes increased with the rise of B doping concentrations, and the lowest energy consumption (0.09 Wh mg⁻¹) and the highest faraday efficiency (28.06 %) were achieved at B/C = 15,000 ppm. In addition, the failure behavior of the Nb/BDD electrode at 600 mA cm⁻² was characterized, revealing four distinct stages: i) electrochemical corrosion; ii) delamination and detachment of the BDD film; iii) oxidation and fragmentation of the exposed Nb substrate; iv) formation and fragmentation of Nb₂O₅ films on the BDD grains. This study provides a potential strategy to enhance the ozone yield and improve the stability of the Nb/BDD electrodes for practical EOP applications.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112130"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143510887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic mechanism of HVOF coating and PVD film in tribo-corrosion behaviors of Cr3C2-NiCr/DLC duplex coatings","authors":"Zihan Feng ,&nbsp;Ruirui Liang ,&nbsp;Shuang Liang ,&nbsp;Dongqing He ,&nbsp;Lunlin Shang","doi":"10.1016/j.diamond.2025.112124","DOIUrl":"10.1016/j.diamond.2025.112124","url":null,"abstract":"<div><div>The Cr₃C₂-NiCr/DLC duplex coating was successfully prepared on 316 L stainless steel through a combined method of high-velocity oxygen-fuel (HVOF) spraying and physical vapor deposition (PVD). The tribo-corrosion features of Cr₃C₂-NiCr coating, DLC film, and Cr₃C₂-NiCr/DLC duplex coatings in a 3.5 wt% NaCl solution were contrastively investigated. Tribo-corrosion tests were conducted under OCP (Open Circuit Potential) conditions, polarization conditions, and cathodic protection conditions, respectively. It was found that the tribo-corrosion resistance of the Cr₃C₂-NiCr/DLC duplex coatings was mainly associated with the synergistic effect of the top DLC film and the Cr₃C₂-NiCr intermediate layer. The Cr₃C₂-NiCr intermediate layer can provides robust support for the top DLC film, while the DLC film effectively seals the Cr₃C₂-NiCr intermediate layer, collectively enhancing the tribo-corrosion resistance of that duplex coatings. Notably, this duplex coating exhibits superior tribo-corrosion resistance, with a wear rate of 4.89 × 10⁻⁷ mm³/N·m. However, the Cr₃C₂-NiCr coating demonstrates the worst resistance to tribo-corrosion, with a wear rate of 1.83 × 10⁻⁵ mm³/N·m. During the tribo-corrosion process, the material loss of the Cr₃C₂-NiCr coatings is mainly caused by the interaction between corrosion and wear, whereas the material loss of the DLC film and the Cr₃C₂-NiCr/DLC coatings is mainly attributed to mechanical wear. In summary, the excellent property of the Cr₃C₂-NiCr/DLC duplex coatings were proved.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112124"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143465015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The effect of Ni on the growth of type-IIa diamonds","authors":"Ziyi Liu ,&nbsp;Fuming Deng ,&nbsp;Xiaozhou Chen ,&nbsp;Jun Ma ,&nbsp;Xiaotian Xing ,&nbsp;Houzhen Chen ,&nbsp;Wenli Deng ,&nbsp;Yan Wang ,&nbsp;Junzhe Yu ,&nbsp;Can Li ,&nbsp;Rui Wang ,&nbsp;Zhengpeng Li","doi":"10.1016/j.diamond.2025.112132","DOIUrl":"10.1016/j.diamond.2025.112132","url":null,"abstract":"<div><div>Diamonds are renowned for their invaluable properties and extensive applications. Among these, Type-IIa diamonds are regarded as the most prized due to their exceptional quality, though their rarity in nature has led to significant interest in their synthetic replication. This study employs the high-pressure and high-temperature method to synthesize high-quality Type-IIa diamond crystals. However, this method is susceptible to the formation of cracks during the growth process due to the rapid growth rate, the differing coefficients of thermal expansion, and the shear force during depressurization. These factors impede the synthesis of high-purity Type-IIa diamonds. To address these challenges and enhance the crystal quality, this paper proposes the incorporation of a specific amount of Ni (flake) into the plugging material. Through the use of a temperature cloud field simulation, it has been demonstrated that Ni has a positive effect on the low stabilization of diamond growth temperature. This assertion has been verified by actual synthesis. Furthermore, a series of physical characterizations have been performed, which have demonstrated that the addition of Ni has a high promotion effect on the synthesis of high-quality type-IIa diamonds.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112132"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143474864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improvement of morphology and electrical properties of boron-doped diamond films via seeding with HPHT nanodiamonds synthesized from 9-borabicyclononane","authors":"Stepan Stehlik ,&nbsp;Stepan Potocky ,&nbsp;Katerina Aubrechtova Dragounova ,&nbsp;Petr Belsky ,&nbsp;Rostislav Medlin ,&nbsp;Andrej Vincze ,&nbsp;Evgeny A. Ekimov ,&nbsp;Alexander Kromka","doi":"10.1016/j.diamond.2025.112127","DOIUrl":"10.1016/j.diamond.2025.112127","url":null,"abstract":"<div><div>Boron-doped diamond (BDD) films are becoming increasingly popular as electrode materials due to their broad potential window and stability in harsh conditions and environments. Therefore, optimizing the crystal quality and minimizing defect density to maximize electronic properties (e.g. conductivity) of BDD is of great importance. This study investigates the influence of different hydrogenated nanodiamond (H-ND) seeding layers on the growth and properties of BDD films. Three types of seeding H-NDs were examined: detonation (H-DND) and top-down high-pressure high-temperature NDs (TD_HPHT H-ND), and boron-doped NDs (H-BND) newly synthesized at high-pressure high-temperature from an organic precursor. Purified and oxidized BND (O-BND) samples yielded clear, blue, and stable colloidal dispersions. Subsequent thermal hydrogenation reversed their zeta potential from – 32 mV to +44 mV and promoted the seeding of negatively charged surfaces. All three H-ND types formed dense seeding layers on SiO₂ and Si/SiO_x substrates, which enabled the growth of BDD films by chemical vapor deposition (CVD). Despite variations in initial surface coverage among the seeding layers (13–25 %), all NDs facilitated the growth of fully closed BDD films approximately 1 μm thick. Significant differences in film morphology and electrical properties were observed. H-BND nucleation yielded the BDD films with the largest crystals (up to 1000 nm) and lowest sheet resistance (400 Ω/sq). This superior performance is attributed to the uniform particle shape and monocrystalline character of H-BND, as corroborated by FTIR, TEM, and SAXS measurements. These findings highlight the critical role of seeding layer properties in determining consequent diamond film evolution and establish H-BNDs as promising seeding material for the growth of high-quality BDD films suitable for electronic and electrochemical applications.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112127"},"PeriodicalIF":4.3,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143479235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of annealing and nanostructuring on properties of NV centers created by different techniques","authors":"Miriam Mendoza Delgado ,&nbsp;Lucas Tsunaki ,&nbsp;Shaul Michaelson ,&nbsp;Mohan K. Kuntumalla ,&nbsp;Johann P. Reithmaier ,&nbsp;Alon Hoffman ,&nbsp;Boris Naydenov ,&nbsp;Cyril Popov","doi":"10.1016/j.diamond.2025.112126","DOIUrl":"10.1016/j.diamond.2025.112126","url":null,"abstract":"<div><div>Nitrogen-vacancy (NV) centers in diamonds have been an epicenter of research for diverse applications in quantum technologies. It is therefore imperative that their fabrication techniques are well understood and characterized for the technological scalability of these applications. A comparative study of the optical and spin properties of NVs created by ion implantation and chemical vapor deposition delta-doping is thus presented, combined with an investigation on the impact of annealing in vacuum at different temperatures. In addition, nanopillars are fabricated by electron beam lithography and reactive ion etching for enhanced photon collection efficiency. An extensive combination of characterization techniques is employed. Notably, the smallest nanopillars present fluorescence enhancements of factor around 50, compared to the unstructured regions. Annealing is also demonstrated to increase the optical contrast between the NVs' electronic states, the coherence and relaxation times both in bulk as in pillars. Regarding the NV preparation technique, the delta-doping is shown to create NVs with less lattice defects and strain compared to implantation.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112126"},"PeriodicalIF":4.3,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143479057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}