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2008 International Nano-Optoelectronics Workshop最新文献

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Strain relaxation effect by nano-pattern etching in InGaN/GaN quantum well structures grown by rf-plasma assisted molecular beam epitaxy. 射频等离子体辅助分子束外延生长InGaN/GaN量子阱结构中纳米蚀刻的应变松弛效应。
2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634539
R. Vadivelu, A. Kikuchi, K. Kishino
{"title":"Strain relaxation effect by nano-pattern etching in InGaN/GaN quantum well structures grown by rf-plasma assisted molecular beam epitaxy.","authors":"R. Vadivelu, A. Kikuchi, K. Kishino","doi":"10.1109/INOW.2008.4634539","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634539","url":null,"abstract":"The IQE of InGaN quantum-wells emit from green to red is not so high due to spatial separation of electrons and holes by strain-induced piezo-electric-field. The strain relaxation in InGaN-QWs by nano etching is discussed.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124248561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of silicon mold for thermal Nanoimprint Lithography 热纳米压印硅模的制备
2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634540
J. Matsui, H. Takahashi, N. Xie, J. Mizuno, K. Utaka
{"title":"Fabrication of silicon mold for thermal Nanoimprint Lithography","authors":"J. Matsui, H. Takahashi, N. Xie, J. Mizuno, K. Utaka","doi":"10.1109/INOW.2008.4634540","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634540","url":null,"abstract":"We fabricated a silicon mold for thermal Nanoimprint Lithography (NIL) with EB exposure and Deep-RIE. As a result, we obtained that including a grating whose pitch was 230nm with low roughness.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123402684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reconfigurable photonic crystal resonators 可重构光子晶体谐振器
2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634418
Myung-Ki Kim, Min‐Kyo Seo, Seo-Heon Kim, Yong-Hee Lee
{"title":"Reconfigurable photonic crystal resonators","authors":"Myung-Ki Kim, Min‐Kyo Seo, Seo-Heon Kim, Yong-Hee Lee","doi":"10.1109/INOW.2008.4634418","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634418","url":null,"abstract":"Recent proposal and demonstration of reconfigurable photonic crystal resonators will be discussed. Gaussian-shaped photonic well is formed, in the proximity of a single-row photonic crystal waveguide, when a highly-curved tapered fiber is in contact.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123621621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated optical devices and circuits for photonic networking 用于光子网络的集成光学器件和电路
2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634454
Y. Nakano
{"title":"Integrated optical devices and circuits for photonic networking","authors":"Y. Nakano","doi":"10.1109/INOW.2008.4634454","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634454","url":null,"abstract":"A review is given on InP-based integrated optical devices for robust and efficient photonic networking. The devices include an all-optical flip-flop for digital processing and memory functions in the network, and a phased-array optical matrix switch for fast and scalable switching of optical burst/packets.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128175905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear dynamics of quantum dot lasers and amplifiers 量子点激光器和放大器的非线性动力学
2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634557
N. Majer, K. Ludge, E. Scholl
{"title":"Nonlinear dynamics of quantum dot lasers and amplifiers","authors":"N. Majer, K. Ludge, E. Scholl","doi":"10.1109/INOW.2008.4634557","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634557","url":null,"abstract":"The dynamical response of electrically pumped semiconductor quantum dot lasers and light pulse propagation in quantum dot semiconductor optical amplifiers is investigated including a microscopic approach for the nonlinear electron-electron scattering processes.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115970251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical and experimental study of chirped-pulse slow and fast light using semiconductor optical amplifiers 利用半导体光放大器对啁啾脉冲慢光和快光进行理论和实验研究
2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634506
B. Pesala, F. Sedgwick, A. Uskov, C. Chang-Hasnain
{"title":"Theoretical and experimental study of chirped-pulse slow and fast light using semiconductor optical amplifiers","authors":"B. Pesala, F. Sedgwick, A. Uskov, C. Chang-Hasnain","doi":"10.1109/INOW.2008.4634506","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634506","url":null,"abstract":"We present theoretical study of fast and slow light in a chirp-compensate semiconductor optical amplifier scheme. We obtain excellent match with experimental results. Using this model, we predict that a delay-bandwidth product of 33 can be attained with properly chosen parameters.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132081920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Small-signal modulation bandwidth of Purcell-enhanced nanocavity light emitters purcell增强纳米腔光源的小信号调制带宽
2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634561
E. Lau, R. Tucker, M. Wu
{"title":"Small-signal modulation bandwidth of Purcell-enhanced nanocavity light emitters","authors":"E. Lau, R. Tucker, M. Wu","doi":"10.1109/INOW.2008.4634561","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634561","url":null,"abstract":"We present a new analysis of the modulation bandwidth of nanocavity light emitters. The modulation bandwidth is enhanced by the Purcell effect, but only if the device is operated below threshold. The maximum Purcell-enhanced 3-dB bandwidth scales inversely with the modal volume.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132306835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coupled implant-defined vertical-cavity surface-emitting laser arrays 耦合植入定义垂直腔面发射激光阵列
2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634480
D. Siriani, P. Carney, K. Choquette
{"title":"Coupled implant-defined vertical-cavity surface-emitting laser arrays","authors":"D. Siriani, P. Carney, K. Choquette","doi":"10.1109/INOW.2008.4634480","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634480","url":null,"abstract":"Evanescently-coupled 2-dimensional VCSEL arrays are fabricated by defining multiple implant apertures. We demonstrate coupling of multiple apertures and develop a coherence theory of laser coupling.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134416236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon photonic devices and their integration 硅光子器件及其集成
2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634437
K. Ohashi
{"title":"Silicon photonic devices and their integration","authors":"K. Ohashi","doi":"10.1109/INOW.2008.4634437","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634437","url":null,"abstract":"Optical communication is accepted as practical when the cost of introducing it is less than that of the conventional electronics. Silicon photonics is the prime candidates for low-cost highly integrated photonic devices because silicon semiconductor industry gives the most cost-effective and highly-integrated devices today. In addition to that, silicon as an optical material offers high-index contrast waveguides and hence it gives micro-meter scale passive optical devices. Those advantages could lead silicon photonics as a key technology for shorter interconnects such as on-chip networks as well as for long-haul telecommunication devices. Low cost integration of photonics with LSI using 3D-integration and surface-plasmon devices will be discussed briefly.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132685501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanophotonics in integrated photonics: A view on metamaterials and devices 集成光子学中的纳米光子学:超材料与器件的观点
2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI: 10.1109/INOW.2008.4634450
L. Thylén, P. Ekaterina, B. Alexander
{"title":"Nanophotonics in integrated photonics: A view on metamaterials and devices","authors":"L. Thylén, P. Ekaterina, B. Alexander","doi":"10.1109/INOW.2008.4634450","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634450","url":null,"abstract":"We discuss from a theoretical viewpoint the required advances in material technology and device structures needed to continue the rapid development of photonic circuit spatial integration density.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117149504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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